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Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays

Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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This paper is an extended version of our paper published in Rumberg, B.; Graham, D. A floating-gate memory cell for continuous-time programming. In Proceedings of the IEEE Midwest Symposium on Circuits and Systems, Boise, ID, USA, 5–8 August 2012; pp. 214–217.
J. Low Power Electron. Appl. 2021, 11(1), 4; https://0-doi-org.brum.beds.ac.uk/10.3390/jlpea11010004
Received: 13 November 2020 / Revised: 7 January 2021 / Accepted: 11 January 2021 / Published: 13 January 2021
(This article belongs to the Special Issue Low Power Memory/Memristor Devices and Systems)
Floating-gate (FG) transistors are a primary means of providing nonvolatile digital memory in standard CMOS processes, but they are also key enablers for large-scale programmable analog systems, as well. Such programmable analog systems are often designed for battery-powered and resource-constrained applications, which require the memory cells to program quickly and with low infrastructural overhead. To meet these needs, we present a four-transistor analog floating-gate memory cell that offers both voltage and current outputs and has linear programming characteristics. Furthermore, we present a simple programming circuit that forces the memory cell to converge to targets with 13.0 bit resolution. Finally, we demonstrate how to use the FG memory cell and the programmer circuit in array configurations. We show how to program an array in either a serial or parallel fashion and demonstrate the effectiveness of the array programming with an application of a bandpass filter array. View Full-Text
Keywords: floating-gate transistor; nonvolatile memory; continuous-time programming; floating-gate memory array; FPAA; reconfigurable floating-gate transistor; nonvolatile memory; continuous-time programming; floating-gate memory array; FPAA; reconfigurable
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MDPI and ACS Style

Rumberg, B.; Clites, S.; Abulaiha, H.; DiLello, A.; Graham, D. Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays. J. Low Power Electron. Appl. 2021, 11, 4. https://0-doi-org.brum.beds.ac.uk/10.3390/jlpea11010004

AMA Style

Rumberg B, Clites S, Abulaiha H, DiLello A, Graham D. Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays. Journal of Low Power Electronics and Applications. 2021; 11(1):4. https://0-doi-org.brum.beds.ac.uk/10.3390/jlpea11010004

Chicago/Turabian Style

Rumberg, Brandon, Spencer Clites, Haifa Abulaiha, Alexander DiLello, and David Graham. 2021. "Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays" Journal of Low Power Electronics and Applications 11, no. 1: 4. https://0-doi-org.brum.beds.ac.uk/10.3390/jlpea11010004

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