Next Article in Journal
Roll Bonding Properties of Al/Cu Bimetallic Laminates Fabricated by the Roll Bonding Technique
Next Article in Special Issue
Communication Challenges in on-Body and Body-to-Body Wearable Wireless Networks—A Connectivity Perspective
Previous Article in Journal
An Evaluation of an Educational Video Game on Mathematics Achievement in First Grade Students
Previous Article in Special Issue
Cuff-Less and Continuous Blood Pressure Monitoring: A Methodological Review

Oxide Thin-Film Transistors on Fibers for Smart Textiles

Sensor Technology Research Centre, University of Sussex, Falmer BN1 9QT, UK
Electronics Laboratory, Swiss Federal Institute of Technology, Zürich 8092, Switzerland
Author to whom correspondence should be addressed.
Academic Editors: Alessandro Tognetti and Nicola Carbonaro
Received: 30 April 2017 / Revised: 26 May 2017 / Accepted: 29 May 2017 / Published: 2 June 2017
(This article belongs to the Special Issue Wearable Technologies)
Smart textiles promise to have a significant impact on future wearable devices. Among the different approaches to combine electronic functionality and fabrics, the fabrication of active fibers results in the most unobtrusive integration and optimal compatibility between electronics and textile manufacturing equipment. The fabrication of electronic devices, in particular transistors on heavily curved, temperature sensitive, and rough textiles fibers is not easily achievable using standard clean room technologies. Hence, we evaluated different fabrication techniques and multiple fibers made from polymers, cotton, metal and glass exhibiting diameters down to 125 μm. The benchmarked techniques include the direct fabrication of thin-film structures using a low temperature shadow mask process, and the transfer of thin-film transistors (TFTs) fabricated on a thin (≈1 μm) flexible polymer membrane. Both approaches enable the fabrication of working devices, in particular the transfer method results in fully functional transistor fibers, with an on-off current ratio > 10 7 , a threshold voltage of ≈0.8 V , and a field effect mobility exceeding 7 c m 2 V 1 s 1 . Finally, the most promising fabrication approach is used to integrate a commercial nylon fiber functionalized with InGaZnO TFTs into a woven textile. View Full-Text
Keywords: field-effect transistors; thin-film technology; InGaZnO; oxide semiconductors; smart textiles field-effect transistors; thin-film technology; InGaZnO; oxide semiconductors; smart textiles
Show Figures

Figure 1

MDPI and ACS Style

Münzenrieder, N.; Vogt, C.; Petti, L.; Salvatore, G.A.; Cantarella, G.; Büthe, L.; Tröster, G. Oxide Thin-Film Transistors on Fibers for Smart Textiles. Technologies 2017, 5, 31.

AMA Style

Münzenrieder N, Vogt C, Petti L, Salvatore GA, Cantarella G, Büthe L, Tröster G. Oxide Thin-Film Transistors on Fibers for Smart Textiles. Technologies. 2017; 5(2):31.

Chicago/Turabian Style

Münzenrieder, Niko, Christian Vogt, Luisa Petti, Giovanni A. Salvatore, Giuseppe Cantarella, Lars Büthe, and Gerhard Tröster. 2017. "Oxide Thin-Film Transistors on Fibers for Smart Textiles" Technologies 5, no. 2: 31.

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop