3.1. Hot-Filament Process to Efficiently Hydrogenate Graphene Materials
To achieve the above-presented route to convert 2LG into diamane, it is necessary to develop an efficient method to hydrogenate 2LG. Only few experimental studies and methods have been reported on this topic so far, as previously reviewed [
2,
36]. In any case, only partially hydrogenated material has been prepared; never fully hydrogenated [
2,
36]. With regard to gas phase methods, which are applicable for nanoelectronics and photonics applications, the best result is of about 10 at.% of hydrogenated carbon, a value estimated in Ref. [
36] from the results published in Ref. [
37]. It was hypothesized that the hot-filament process might constitute a very competitive method for the efficient hydrogenation of graphene sheets and the subsequent formation of diamane [
2]. Hot-filament CVD has been employed for the industrial production of diamond films for about 40 years because it efficiently produces atomic hydrogen (H), which has been shown to play a critical role for the conventional synthesis of metastable diamond at low pressure from a dilute mixture of a hydrocarbon in H
2 [
38,
39,
40,
41]. In the hot-filament process, H is produced heterogeneously by the thermal decomposition of H
2 on the hot filament surface, and rapidly diffuses into the bulk gas. H recombination reactions are sufficiently slow at the typical process pressures (below 100 Torr) that most of the H diffuse to the reactor walls. H is present at super-equilibrium concentration throughout most of the reactor [
41]. The effects of H
2 pressure and flow rate, filament temperature, and radial distance from the filament on the relative H concentrations, and the gas temperature profiles have been investigated in detail, in particular for the case of pure H
2 [
41,
42,
43,
44,
45,
46,
47]. In the hot filament process, as compared to low pressure plasma techniques, the presence of ions accelerated toward the substrate, which can damage the graphene, is avoided. High kinetic energy ions in the plasma tend to etch the graphene film instead of participating in the hydrogenation process [
48]. The hot-filament process was successfully used to grow crystalline nanodiamonds at low substrate temperature, below 300 °C, on temperature-sensitive substrates such as kapton
®VN [
49,
50,
51]. Notably, it was then used to conformally coat carbon nanotube bundles with diamond and SiC nanocrystals from solid carbon and silicon sources exposed to H at ~190 °C, before the nanotubes could be etched away [
21,
52].
Figure 1a displays a typical UV Raman spectrum of such a material (see the corresponding scanning electron microscopy image in
Figure 1b), showing a sharp diamond peak at about 1325 cm
−1 from diamond nanocrystals at the surface of nanotube bundles. From the efficient production of H by the hot-filament process and the possibility to process graphene materials at low substrate temperature, it was hypothesized that it might be possible to efficiently hydrogenate 2LG using such a process, and to subsequently produce genuine diamane.
3.2. Genuine Diamane from 2LG
As evidenced by selected area electron diffraction, the pristine 2LG films present a lack of homogeneity regarding the stacking sequence and the number of domains covered by the aperture opening (
Figure 2). Thanks to the use of an electron energy as low as 5 keV, which allows revealing pattern features different and somehow complementary to that obtained at the more common 80–100 keV energy [
53], the following configurations are evidenced in the material:
- (i)
single 2LG domain with AA stacking (illustrated by
Figure 2a);
- (ii)
single 2LG domain with AB stacking, which discriminates from 2LG-AA above by the three-fold symmetry of the spot intensity distribution on the first ring (illustrated by
Figure 2b) [
54];
- (iii)
single 2LG domain made of two randomly stacked 1LG (illustrated by
Figure 2c), otherwise designated as twisted 2LG;
- (iv)
multiple 2LG domains, corresponding to the various combinations of cases (i) to (iii) above (illustrated by
Figure 2d); this case happens when the selection aperture covers an area of the 2LG film where several neighboring domains separated by defect lines are present.
Micro-Raman (UV) mapping was performed before and after exposure to the hot-filament-promoted hydrogenation process to track any resulting structure conversion change. Before the hydrogenation process, the spectra of 2LG are characterized by a regular sharp G peak at around 1582 cm
−1, due to bond stretching of all pairs of sp
2–C in graphene sheets. After the hydrogenation process, drastic changes can be observed in the Raman spectra from various regions.
Figure 3a presents a typical spectrum of such a region, which exhibits specific features:
- (i)
the G peak is no longer detected;
- (ii)
the D peak which originates from defects in graphene sheets [
37] is still not observed;
- (iii)
a sharp peak (full width at half maximum (FWHM) of around 10–33 cm−1) at around 1344−1367 cm−1 has appeared.
This type of spectrum can be observed over extended regions of several µm width and in various areas probed by the laser (on both the grid gold-wire-supported material and the free-standing material), as illustrated in
Figure 3b which displays a map of the intensity of this peak. The peak at around 1344–1367 cm
−1 is not the D peak, since the G peak is not simultaneously observed; moreover it is too sharp and its spectral position does not correspond to the value observed in the UV spectra of nanocrystalline graphite [
54]. It is assigned to the diamond/lonsdaleite stretching mode between sp
3–C [
2] (diamond
E2g mode; lonsdaleite
A1g and
E2g modes). This mode was predicted to be near 1320 cm
−1 from ab initio calculations for diamane [
4], and was found at slightly lower wavenumber in diamanoids (1319.5–1337 cm
−1) [
2,
17] and diamond (1332 cm
−1). Note that in lonsdaleite, the
A1g and the
E2g modes, corresponding to the triply-degenerated stretching mode of cubic diamond, are split into a component vibrating in the plane of the layers and a component vibrating perpendicular to the layers [
55]. The bonding strength of lonsdaleite is comparable whether it is parallel or perpendicular to the layers and the wavenumber separation between the A
1g and E
2g modes is expected to be small [
55]. We conclude that the results shown in
Figure 3a,b are evidence that full sp
2–C to sp
3–C conversion, i.e., full conversion of 2LG into genuine diamane, can be obtained over a large region, here on the order of several tens µm
2.
It is assumed that the conversion takes place in regions of the 2LG film where graphene sheets are AB- or AA-stacked, as these are the most energetically favorable configurations [
1,
2]. As noted, the starting 2LG contains many domains with randomly stacked layers for which C–C interlayer bonding cannot occur; stress and/or strain is expected once these layers are hydrogenated, as well as at the grain boundaries between graphenic and diamane domains. This hypothesis is confirmed by the following observations:
- (i)
Cracks have appeared in the film (compare
Figure 4a,b).
- (ii)
A range of up-shifted positions of the Raman sp
3−C peak are observed (
Figure 5).
It must be pointed out that, under current knowledge, electron diffraction of such 2D films cannot be used as a sole proof of diamane structure, as the patterns do not allow discriminating with enough confidence between the graphene, diamond, and lonsdaleite structures, either from interplanar distances, spot intensity distribution, or from peak intensities, as shown in Ref. [
17]. This limitation could however be overcome by using multiwavelength electron diffraction [
53] but further calculations are still needed to apply the methodology to diamanes and diamanoids. However, in our case, the graphene to crystallized sp
3–C structure conversion is established from the Raman spectra.
In
Figure 5, one can note a correlation of the Raman sp
3–C stretching peak width with its position, which ranges from 1340 to 1370 cm
−1. An upshift in FWHM could arise from the increased strain due to the presence of several interconnected phases (diamane, graphene), but could also be due to inhomogeneous layer hydrogenation, or to a distorted bonding between two one-side-hydrogenated twisted layers. Because a splitting between singlet and doublet due to hypothetical biaxial strain is not observed in the Raman spectra, the rough hypothesis of an average hydrostatic strain is assumed to be acceptable. As calculated in [
56], the Grüneisen parameter for optical phonon in diamond and lonsdaleite is around 3 cm
−1/GPa. The in-plane lattice parameter is 0.249 nm in lonsdaleite, 0.252 nm in diamond, and 0.246 nm in graphene, leading to a strain of −1 to −2%. In graphene or diamond, −1% is associated to a hydrostatic stress of about 10 GPa. Consequently, a wavenumber shift of 30 cm
−1 is possible and corresponds to the range of the shift observed.
The presence of stress or strain is further confirmed by first principle calculations on modified diamane structures. In the case of under-hydrogenation, achieved by removing 7 H atoms from the top layer of genuine diamane structure (one hydrogen atom every two carbon atoms), a strong structural reorganization occurs (
Figure 6a,b). The 19 C atoms involved in the extended defect tend to lose their sp
3 character and to recover sp
2, implying the shortening of several C–C bond-lengths, confirmed by the histogram given in
Figure 7.
Thus, the lattice parameter remains the same while local distortions can be present which could be at the origin of both the linewidth broadening and frequency variations (
Figure 5). These calculations show that significant distortions can occur upon partial hydrogenation. The sp
2–C to sp
3–C conversion induces huge stresses, specifically at the domain boundaries, either in the case of under-hydrogenation or when the 2LG involved does not exhibit the perfect AB or AA stacking needed for the inter-bonding of the layers. In the case of turbostratic or commensurate stacking, only partial sp
2–C to sp
3–C conversion may occur, locally promoted when carbon atoms happen to locally superimpose. This is also consistent with the stress estimated in diamanoid/graphene hybrids [
17].
First principle calculations show that full hydrogenation for AB stacking is the most stable final material. First, starting from the genuine diamane structure, and then subsequently moving a hydrogen or a pair of hydrogen atoms to the neighboring C atoms, a spontaneous relocation of the hydrogen atoms to the correct sites for diamane formation is observed. Thus, it appears that hydrogen atoms self-organize when reacting with a graphene layer. Second, in the case of C atoms already coordinated to 3 other C atoms, such that two first-neighbor C atoms both wear a hydrogen, addition of excess H atoms always results in spontaneous desorption to reform H2 molecules. Over-hydrogenation of the structure is thus not energetically favorable. This is quite convenient for setting the synthesis parameters, as it indicates that an excess of hydrogen is preferable to an insufficient supply of it with no risk to affect the resulting diamane (or diamanoid) structure.