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Article

Characterization of Dislocation Rearrangement in FCC Metals during Work Hardening Using X-ray Diffraction Line-Profile Analysis

1
Graduate School of Science and Engineering, Ibaraki University, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
2
Central Research Institute, Mitsubishi Materials Corporation, 7-147 Shimoishido, Kitamoto, Saitama 364-0028, Japan
3
Frontier Research Center for Applied Atomic Sciences, Ibaraki University, 162-1 Shirakata, Tokai, Ibaraki 319-1106, Japan
4
Micro System Integration Center, Tohoku University, 2-1-1 Katahira, Sendai, Miyagi 980-8577, Japan
*
Author to whom correspondence should be addressed.
Quantum Beam Sci. 2020, 4(4), 36; https://0-doi-org.brum.beds.ac.uk/10.3390/qubs4040036
Received: 14 September 2020 / Revised: 9 October 2020 / Accepted: 9 October 2020 / Published: 11 October 2020
(This article belongs to the Special Issue Analysis of Strain, Stress and Texture with Quantum Beams)
Multiplication and rearrangement of dislocations in face-centered cubic (FCC) metals during tensile deformation are affected by grain size, stacking fault energy (SFE), and solute elements. X-ray diffraction (XRD) line-profile analysis can evaluate the dislocation density (ρ) and dislocation arrangement (M) from the strength of the interaction between dislocations. However, the relationship between M and ρ has not been thoroughly addressed. In this study, multiplication and rearrangement of dislocations in FCC metals during tensile deformation was evaluated by XRD line-profile analysis. Furthermore, the effects of grain size, SFE, and solute elements on the extent of dislocation rearrangement were evaluated with varying M values during tensile deformation. M decreased as the dislocation density increased. By contrast, grain size and SFE did not exhibit a significant influence on the obtained M values. The influence of solute species and concentration of solute elements on M changes were also determined. In addition, the relationship between dislocation substructures and M for tensile deformed metals were also explained. Dislocations were loosely distributed at M > 1, and cell walls gradually formed by gathering dislocations at M < 1. While cell walls became thicker with decreasing M in metals with low stacking fault energy, thin cell walls with high dislocation density formed for an M value of 0.3 in metals with high stacking fault energy. View Full-Text
Keywords: stacking fault energy; solute element; transmission electron microscopy; X-ray diffraction; dislocation; line-profile analysis stacking fault energy; solute element; transmission electron microscopy; X-ray diffraction; dislocation; line-profile analysis
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MDPI and ACS Style

Nakagawa, K.; Hayashi, M.; Takano-Satoh, K.; Matsunaga, H.; Mori, H.; Maki, K.; Onuki, Y.; Suzuki, S.; Sato, S. Characterization of Dislocation Rearrangement in FCC Metals during Work Hardening Using X-ray Diffraction Line-Profile Analysis. Quantum Beam Sci. 2020, 4, 36. https://0-doi-org.brum.beds.ac.uk/10.3390/qubs4040036

AMA Style

Nakagawa K, Hayashi M, Takano-Satoh K, Matsunaga H, Mori H, Maki K, Onuki Y, Suzuki S, Sato S. Characterization of Dislocation Rearrangement in FCC Metals during Work Hardening Using X-ray Diffraction Line-Profile Analysis. Quantum Beam Science. 2020; 4(4):36. https://0-doi-org.brum.beds.ac.uk/10.3390/qubs4040036

Chicago/Turabian Style

Nakagawa, Koutarou, Momoki Hayashi, Kozue Takano-Satoh, Hirotaka Matsunaga, Hiroyuki Mori, Kazunari Maki, Yusuke Onuki, Shigeru Suzuki, and Shigeo Sato. 2020. "Characterization of Dislocation Rearrangement in FCC Metals during Work Hardening Using X-ray Diffraction Line-Profile Analysis" Quantum Beam Science 4, no. 4: 36. https://0-doi-org.brum.beds.ac.uk/10.3390/qubs4040036

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