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CO Detection Investigation at High Temperature by SiC MISFET Metal/Oxide Gas Sensors

Division of Sensor and Actuator Systems, IFM, Linköping University, SE-581 83 Linköping, Sweden
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Presented at the 4th Edition of the nanoFIS—Functional Integrated nano Systems Conference, Graz, Austria, 2–4 November 2020.
Published: 21 January 2021
In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film of co-deposited Pt/Al2O3 instead of the commonly used catalytic metal-based contacts were fabricated and characterized for CO detection at elevated temperatures and different CO and O2 levels. It can be concluded that the sensing mechanism at elevated temperatures correlates with oxygen removal from the sensor surface rather than the surface CO coverage as observed at lower temperatures. The long-term stability performance was also shown to be improved compared to that of previously studied devices.
Keywords: CO; MISFET; gas sensor; sensing mechanism CO; MISFET; gas sensor; sensing mechanism
MDPI and ACS Style

Khajavizadeh, L.; Spetz, A.L.; Andersson, M. CO Detection Investigation at High Temperature by SiC MISFET Metal/Oxide Gas Sensors. Proceedings 2020, 56, 41. https://0-doi-org.brum.beds.ac.uk/10.3390/proceedings2020056041

AMA Style

Khajavizadeh L, Spetz AL, Andersson M. CO Detection Investigation at High Temperature by SiC MISFET Metal/Oxide Gas Sensors. Proceedings. 2020; 56(1):41. https://0-doi-org.brum.beds.ac.uk/10.3390/proceedings2020056041

Chicago/Turabian Style

Khajavizadeh, Lida; Spetz, Anita Lloyd; Andersson, Mike. 2020. "CO Detection Investigation at High Temperature by SiC MISFET Metal/Oxide Gas Sensors" Proceedings 56, no. 1: 41. https://0-doi-org.brum.beds.ac.uk/10.3390/proceedings2020056041

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