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Applied Sciences
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Applications of Nano-Electronic Devices
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Applications of Nano-Electronic Devices

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Nanotechnology and Applied Nanosciences".

Deadline for manuscript submissions: closed (20 April 2023) | Viewed by 24705

Special Issue Editor

Dr. Sungjun Park

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
Interests: optoelectronic devices; low-power sensors; skin and tissue compatible electronics; physiological biosensors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Nano electronic devices and materials are promising owing to their inherent structural and material advantages, such as device miniaturization, densified integration, and low-power consumption. Simple approaches on nano-scale fabrication of devices and materials, compatible with large-area and solution process, accelerate basic understanding on operational mechanism of devices and/or formation mechanism of materials, respectively. It is manifested the dramatic achievement on functional electronic devices, including light emitting diodes, photodetectors, photovoltaics, transistors, memory and sensors. Furthermore, those devices with form-free flexible/stretchable characteristics exhibit unprecedented performances for human-friendly electronic applications.

This Special Issue will serve as a forum for research papers and review articles in the following concepts, but not limited to these:

  • Advanced nano-materials for electronics
  • Nano-scale electronic devices and sensors
  • Novel nano-fabrication techniques for electronic devices
  • Low-power consuming electronic devices
  • On-demand applications of nano-electronic devices
  • Flexible and stretchable nano-electronic devices

Dr. Sungjun Park
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Nano materials,
  • Flexible devices,
  • Stretchable devices,
  • Transistor,
  • Photodiode,
  • Photovoltaics,
  • Light emitting diodes,
  • Memory,
  • Sensors

Published Papers (8 papers)

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Editorial

Jump to: Research, Review

2 pages, 160 KiB  
Editorial
Special Issue on Nano-Electronic Devices and Functional Applications
by Chuljin Hwang and Sungjun Park
Appl. Sci. 2023, 13(11), 6692; https://0-doi-org.brum.beds.ac.uk/10.3390/app13116692 - 31 May 2023
Cited by 1 | Viewed by 823
Abstract
Nano-electronic devices and materials hold considerable promise due to their inherent structural and material benefits, such as device miniaturization, increased integration density, and reduced power consumption [...] Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)

Research

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12 pages, 3657 KiB  
Article
Enhanced Electrical Transport and Photoconductivity of ZnO/ZnS Core/Shell Nanowires Based on Piezotronic and Piezo-Phototronic Effects
by Sehee Jeong and Seong-Ju Park
Appl. Sci. 2022, 12(17), 8393; https://doi.org/10.3390/app12178393 - 23 Aug 2022
Cited by 2 | Viewed by 1199
Abstract
We report a significant enhancement in the electrical transport and photoconductivity of ZnO/ZnS core/shell nanowires (NWs) compared to those of ZnO NWs via the application of compressive strain. Under a compressive strain of −0.15%, the output current of the ZnO/ZnS core/shell NWs increases [...] Read more.
We report a significant enhancement in the electrical transport and photoconductivity of ZnO/ZnS core/shell nanowires (NWs) compared to those of ZnO NWs via the application of compressive strain. Under a compressive strain of −0.15%, the output current of the ZnO/ZnS core/shell NWs increases by 91.1% compared to that under the no-strain condition, whereas that of the ZnO NWs under the same condition is 42.7%. The significant increase in the output current of the ZnO/ZnS core/shell NWs is attributed to the type-II band alignment and strain-induced piezopotential changes at the junction interface, which induce a reduction in the barrier height to enable efficient charge carrier transport. Furthermore, under UV illumination and a compressive strain of −0.15%, although the photocurrent of the ZnO/ZnS core/shell NWs increases by 4.5 times compared to that of the ZnO NWs, the relative increase in the photocurrent of the ZnO/ZnS core/shell NWs is 11.7% compared to that under the no-strain condition, while the photocurrent of the ZnO NWs increases by 32.3% under the same condition. A decrease in the increase rate in the photocurrent of the ZnO/ZnS core/shell NWs with a change in strain under UV light compared to that under the dark condition can be explained by the piezoelectric screening effect induced by photogenerated carriers. By calculating the change in the Schottky barrier height (SBH), we demonstrate that the piezoelectric potential with a change in strain decreased the SBH, thus increasing the current level. Lastly, we propose a mechanism of the piezotronic and piezo-phototronic effects under applied strain and their effects on energy-band diagrams. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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8 pages, 7010 KiB  
Article
Combining Interference Lithography and Two-Photon Lithography for Fabricating Large-Area Photonic Crystal Structures with Controlled Defects
by Hongsub Jee, Min-Joon Park, Kiseok Jeon, Chaehwan Jeong and Jaehyeong Lee
Appl. Sci. 2021, 11(14), 6559; https://0-doi-org.brum.beds.ac.uk/10.3390/app11146559 - 16 Jul 2021
Cited by 11 | Viewed by 2652
Abstract
Interference lithography is a promising method for fabricating large-area, defect-free three-dimensional photonic crystal structures which can be used for facilitating the realization of photonic devices with a fast processing time. Although they can be used in waveguides, resonators, and detectors, their repeated regular [...] Read more.
Interference lithography is a promising method for fabricating large-area, defect-free three-dimensional photonic crystal structures which can be used for facilitating the realization of photonic devices with a fast processing time. Although they can be used in waveguides, resonators, and detectors, their repeated regular array patterns can only be used for limited applications. In this study, we demonstrate a method for fabricating large-area photonic crystal structures with controlled defects by combining interference lithography and two-photon lithography using a light-curable resin. By combining regular array structures and controlled patterns, monotonous but large-area regular structures can be obtained. Furthermore, the patterned structures have considerable potential for use in various applications, such as solar cells, sensors, photodetectors, micro-/nano-electronics, and cell growth. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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Graphical abstract

7 pages, 1868 KiB  
Article
Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture
by Kyung-Tae Kim, Seung-Han Kang, Seung-Ji Nam, Chan-Yong Park, Jeong-Wan Jo, Jae-Sang Heo and Sung-Kyu Park
Appl. Sci. 2021, 11(12), 5501; https://0-doi-org.brum.beds.ac.uk/10.3390/app11125501 - 14 Jun 2021
Cited by 4 | Viewed by 2131
Abstract
A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be efficiently reduced compared to conventional [...] Read more.
A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be efficiently reduced compared to conventional substrates. Based on the results, a conventional photolithography process was employed to implement the reverse-trapezoid homogeneous structures using a negative photoresist (NPR). Simply accessible photolithography using NPR enabled high-resolution patterning and thus large-area scalable device architectures could be obtained. The a-IGZO TFTs on the reverse-trapezoid-structured PDMS exhibited a maximum saturation mobility of 6.06 cm2V−1s−1 under a drain bias voltage of 10 V with minimal strain stress. As a result, the proposed a-IGZO TFTs, including stress-released architecture, exhibited highly enhanced mechanical properties, showing saturation mobility variation within 12% under a strain of 15%, whereas conventional planar a-IGZO TFTs on PDMS showed mobility variation over 10% even under a 1% strain and failed to operate beyond a 2% strain. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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7 pages, 1723 KiB  
Article
Surface Passivation of Crystalline Silicon Wafer Using H2S Gas
by Jian Lin, Hongsub Jee, Jangwon Yoo, Junsin Yi, Chaehwan Jeong and Jaehyeong Lee
Appl. Sci. 2021, 11(8), 3527; https://0-doi-org.brum.beds.ac.uk/10.3390/app11083527 - 15 Apr 2021
Cited by 1 | Viewed by 2069
Abstract
We report the effects of H2S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H2S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 μs) of a [...] Read more.
We report the effects of H2S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H2S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 μs) of a c-Si wafer without any passivation treatments was also measured for comparison. The highest minority carrier lifetime gain of 2030% was observed at an annealing temperature of 600 °C. The X-ray photoelectron spectroscopy analysis revealed that S atoms were bonded to Si atoms after H2S annealing treatment. This indicates that the increase in minority carrier lifetime originating from the effect of sulfur passivation on the silicon wafer surface involves dangling bonds. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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Graphical abstract

7 pages, 1847 KiB  
Article
Prediction of a Two-Transistor Vertical QNOT Gate
by Heesung Han and Chang-Hyun Kim
Appl. Sci. 2020, 10(21), 7597; https://0-doi-org.brum.beds.ac.uk/10.3390/app10217597 - 29 Oct 2020
Cited by 5 | Viewed by 2166
Abstract
A new design of quaternary inverter (QNOT gate) is proposed by means of finite-element simulation. Traditionally, increasing the number of data levels in digital logic circuits was achieved by increasing the number of transistors. Our QNOT gate consists of only two transistors, resembling [...] Read more.
A new design of quaternary inverter (QNOT gate) is proposed by means of finite-element simulation. Traditionally, increasing the number of data levels in digital logic circuits was achieved by increasing the number of transistors. Our QNOT gate consists of only two transistors, resembling the binary complementary metal-oxide-semiconductor (CMOS) inverter, yet the two additional levels are generated by controlling the charge-injection barrier and electrode overlap. Furthermore, these two transistors are stacked vertically, meaning that the entire footprint only consumes the area of one single transistor. We explore several key geometrical and material parameters in a series of simulations to show how to systematically modulate and optimize the quaternary logic behaviors. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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Review

Jump to: Editorial, Research

20 pages, 4230 KiB  
Review
Recent Advances in Fiber-Shaped Electronic Devices for Wearable Applications
by Minji Kang and Tae-Wook Kim
Appl. Sci. 2021, 11(13), 6131; https://0-doi-org.brum.beds.ac.uk/10.3390/app11136131 - 01 Jul 2021
Cited by 24 | Viewed by 4381
Abstract
Fiber electronics is a key research area for realizing wearable microelectronic devices. Significant progress has been made in recent years in developing the geometry and composition of electronic fibers. In this review, we present that recent progress in the architecture and electrical properties [...] Read more.
Fiber electronics is a key research area for realizing wearable microelectronic devices. Significant progress has been made in recent years in developing the geometry and composition of electronic fibers. In this review, we present that recent progress in the architecture and electrical properties of electronic fibers, including their fabrication methods. We intensively investigate the structural designs of fiber-shaped devices: coaxial, twisted, three-dimensional layer-by-layer, and woven structures. In addition, we introduce remarkable applications of fiber-shaped devices for energy harvesting/storage, sensing, and light-emitting devices. Electronic fibers offer high potential for use in next-generation electronics, such as electronic textiles and smart integrated textile systems, which require excellent deformability and high operational reliability. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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21 pages, 10159 KiB  
Review
Systematic Review on Human Skin-Compatible Wearable Photoplethysmography Sensors
by Inho Lee, Nakkyun Park, Hanbee Lee, Chuljin Hwang, Joo Hee Kim and Sungjun Park
Appl. Sci. 2021, 11(5), 2313; https://0-doi-org.brum.beds.ac.uk/10.3390/app11052313 - 05 Mar 2021
Cited by 27 | Viewed by 7800
Abstract
The rapid advances in human-friendly and wearable photoplethysmography (PPG) sensors have facilitated the continuous and real-time monitoring of physiological conditions, enabling self-health care without being restricted by location. In this paper, we focus on state-of-the-art skin-compatible PPG sensors and strategies to obtain accurate [...] Read more.
The rapid advances in human-friendly and wearable photoplethysmography (PPG) sensors have facilitated the continuous and real-time monitoring of physiological conditions, enabling self-health care without being restricted by location. In this paper, we focus on state-of-the-art skin-compatible PPG sensors and strategies to obtain accurate and stable sensing of biological signals adhered to human skin along with light-absorbing semiconducting materials that are classified as silicone, inorganic, and organic absorbers. The challenges of skin-compatible PPG-based monitoring technologies and their further improvements are also discussed. We expect that such technological developments will accelerate accurate diagnostic evaluation with the aid of the biomedical electronic devices. Full article
(This article belongs to the Special Issue Applications of Nano-Electronic Devices)
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