Colloidal Quantum Dot Based Electric and Optoelectronic Devices

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Quantum Science and Technology".

Deadline for manuscript submissions: closed (15 December 2021) | Viewed by 5736

Special Issue Editor


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Guest Editor
Advanced Materials Engineering, Kyonggi University, Suwon, Korea
Interests: nanomaterials; colloidal quantum dots; OLED
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Special Issue Information

Dear Colleagues,

Colloidal quantum dots (QDs) are considered as a rising candidate for flexible and large-scale electronics, as well as next-generation light-emitting devices, because of their unique properties, such as a narrow emission bandwidth, high mobility, and cost-effective solution processing. These optical/electrical properties of colloidal QDs with a core/shell heterostructure are determined by the quantum confinement effect based on the nanocrystal particle size. Many research groups have investigated enhancing device performances using various colloidal QDs compositions and optimized device structures. While the performance of QD-based devices has been upgraded dramatically, a future task will be the substitution of Cd-based QDs for less toxic materials. 

The main focus of this Special Issue will be to point out the progress on colloidal quantum dots from both synthetic and device application points of view. Research articles, with special emphasis on the results obtained in the last five years, are welcome, as well as review articles on emerging fields.

Prof. Dr. Jiwan Kim
Guest Editor

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Keywords

  • colloidal quantum dots
  • photoluminescence
  • electroluminescence
  • thin film transistors
  • photovoltaics

Published Papers (2 papers)

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Research

10 pages, 3114 KiB  
Article
Phosphine-Free-Synthesized ZnSe/ZnS Core/Shell Quantum Dots for White Light-Emitting Diodes
by Nyamsuren Byambasuren, Jiyeon Jo, Hyungduk Ko, Byeong-Kwon Ju, Ji Young Byun and Ho Seong Jang
Appl. Sci. 2021, 11(21), 10060; https://0-doi-org.brum.beds.ac.uk/10.3390/app112110060 - 27 Oct 2021
Cited by 3 | Viewed by 2590
Abstract
Blue-light-emitting ZnSe core (C) and ZnSe/ZnS core/shell (C/S) quantum dots (QDs) were synthesized with phosphine-free precursors by a thermal decomposition method in paraffin oil solvent and applied to QD-converted light-emitting diodes (LEDs). The optical properties of the synthesized ZnSe C and ZnSe/ZnS C/S [...] Read more.
Blue-light-emitting ZnSe core (C) and ZnSe/ZnS core/shell (C/S) quantum dots (QDs) were synthesized with phosphine-free precursors by a thermal decomposition method in paraffin oil solvent and applied to QD-converted light-emitting diodes (LEDs). The optical properties of the synthesized ZnSe C and ZnSe/ZnS C/S QDs were characterized by absorption spectroscopy and photoluminescence spectroscopy. Additionally, the quantum efficiency of the QDs was investigated. Their structural properties were studied with X-ray crystallography and transmission electron microscopy. The ZnSe/ZnS C/S QDs showed deep-blue light peaking at 425 nm. The blue-light-emitting ZnSe/ZnS C/S QDs were used as color-converting materials for near-ultraviolet LED-pumped blue LEDs and combined with yellow-light-emitting Zn-Cu-In-S/ZnS C/S QDs to fabricate white LEDs. The white LEDs showed warm white light [(CIE x, CIE y) = (0.4088, 0.3987)], Tc = 3488 K, and Ra = 61.2]. The results indicate that the ZnSe/ZnS C/S QDs have good potential for white light application after further improvements to their optical properties. Full article
(This article belongs to the Special Issue Colloidal Quantum Dot Based Electric and Optoelectronic Devices)
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8 pages, 1727 KiB  
Article
Solution-Processed Memristor Devices Using a Colloidal Quantum Dot-Polymer Composite
by Minho Kim, Seongkeun Oh, Seungho Song, Jiwan Kim and Yong-Hoon Kim
Appl. Sci. 2021, 11(11), 5020; https://0-doi-org.brum.beds.ac.uk/10.3390/app11115020 - 28 May 2021
Cited by 2 | Viewed by 2640
Abstract
In this study, we demonstrate solution-processed memristor devices using a CdSe/ZnS colloidal quantum dot (CQD)/poly(methyl methacrylate) (PMMA) composite and their electrical characteristics were investigated. Particularly, to obtain stable memristive characteristics with a large current switching ratio, the concentration of CdSe/ZnS QDs in the [...] Read more.
In this study, we demonstrate solution-processed memristor devices using a CdSe/ZnS colloidal quantum dot (CQD)/poly(methyl methacrylate) (PMMA) composite and their electrical characteristics were investigated. Particularly, to obtain stable memristive characteristics with a large current switching ratio, the concentration of CdSe/ZnS QDs in the PMMA matrix was optimized. It was found that with the CdSe/ZnS QD concentration of 1 wt%, the memristor device exhibited a high current switching ratio of ~104 and a retention time over 104 s, owing to the efficient charge trapping and de-trapping during the set and reset processes, respectively. In addition, we investigated the operational stability of the device by carrying out the cyclic endurance test and it was found that the memristor device showed stable switching behavior up to 400 cycles. Furthermore, by analyzing the conduction behavior of the memristor device, we have deduced the possible mechanisms for the degradation of the switching characteristics over long switching cycles. Specifically, it was observed that the dominant conduction mechanism changed from trap-free space charge-limited current conduction to trap charge-limited current conduction, indicating the creation of additional trap states during the repeated operation, disturbing the memristive operation. Full article
(This article belongs to the Special Issue Colloidal Quantum Dot Based Electric and Optoelectronic Devices)
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