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Applied Sciences
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III-V Semiconductor Nanostructures
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III-V Semiconductor Nanostructures

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Applied Physics General".

Deadline for manuscript submissions: closed (10 October 2021) | Viewed by 7083

Special Issue Editors

Dr. Mark Hopkinson

E-Mail Website
Guest Editor
Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, UK
Interests: semiconductor materials
Dr. Im Sik Han

E-Mail Website
Guest Editor
Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S10 2TN, UK
Interests: MBE growth; III-V semiconductors; III–As materials; III–Sb materials; quantum dots; quantum rings; nanostructures

Special Issue Information

Dear Colleagues,

III–V semiconductor nanostructures have attracted extensive interest, due to their unique optical, electrical and mechanical properties and their potential applications in many fields. The rapid development of technology for creating new nanostructures requires the research community to comprehensively analyze their electronic and optical properties. The topics of this Special Issue include, but are not limited to, the following: growth and design of III-V semiconductor nanostructures, molecular beam epitaxy growth, metal organic chemical vapor deposition growth, quantum dots, quantum rings, nanowires, optical properties, structural properties, applications of optoelectronic devices. We invite researchers to submit their original research articles, letters, and reviews on fundamental and applied studies of III-V semiconductor nanostructures.

Dr. Mark Hopkinson
Dr. Im Sik Han
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • III-V semiconductors
  • epitaxial crystal growth
  • nanostructures
  • quantum dots
  • quantum rings
  • nanowires
  • characterization

Published Papers (3 papers)

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Research

13 pages, 3639 KiB  
Article
Quick Fabrication VCSELs for Characterisation of Epitaxial Material
by Jack Baker, Craig P. Allford, Sara-Jayne Gillgrass, Richard Forrest, David G. Hayes, Josie Nabialek, Curtis Hentschel, J. Iwan Davies, Samuel Shutts and Peter M. Smowton
Appl. Sci. 2021, 11(20), 9369; https://0-doi-org.brum.beds.ac.uk/10.3390/app11209369 - 09 Oct 2021
Cited by 1 | Viewed by 2109
Abstract
A systematic analysis of the performance of VCSELs, fabricated with a decreasing number of structural elements, is used to assess the complexity of fabrication (and therefore time) required to obtain sufficient information on epitaxial wafer suitability. Initially, sub-mA threshold current VCSEL devices are [...] Read more.
A systematic analysis of the performance of VCSELs, fabricated with a decreasing number of structural elements, is used to assess the complexity of fabrication (and therefore time) required to obtain sufficient information on epitaxial wafer suitability. Initially, sub-mA threshold current VCSEL devices are produced on AlGaAs-based material, designed for 940 nm emission, using processing methods widely employed in industry. From there, stripped-back Quick Fabrication (QF) devices, based on a bridge-mesa design, are fabricated and this negates the need for benzocyclcobutane (BCB) planarisation. Devices are produced with three variations on the QF design, to characterise the impact on laser performance from removing time-consuming process steps, including wet thermal oxidation and mechanical lapping used to reduce substrate thickness. An increase in threshold current of 1.5 mA for oxidised QF devices, relative to the standard VCSELs, and a further increase of 1.9 mA for unoxidised QF devices are observed, which is a result of leakage current. The tuning of the emission wavelength with current increases by ~0.1 nm/mA for a VCSEL with a 16 μm diameter mesa when the substrate is unlapped, which is ascribed to the increased thermal resistance. Generally, relative to the standard VCSELs, the QF methods employed do not significantly impact the threshold lasing wavelength and the differences in mean wavelengths of the device types that are observed are attributed to variation in cavity resonance with spatial position across the wafer, as determined by photovoltage spectroscopy measurements. Full article
(This article belongs to the Special Issue III-V Semiconductor Nanostructures)
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13 pages, 38775 KiB  
Article
Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets
by Erick Gastellóu, Godofredo García, Ana María Herrera, Crisoforo Morales, Rafael García, Gustavo Alonso Hirata, Enrique Rosendo, José Alberto Luna, Mario Robles, Jorge Alberto Rodríguez and Yani Dallane Ramírez
Appl. Sci. 2021, 11(15), 6990; https://0-doi-org.brum.beds.ac.uk/10.3390/app11156990 - 29 Jul 2021
Cited by 3 | Viewed by 2011
Abstract
GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance [...] Read more.
GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN. Full article
(This article belongs to the Special Issue III-V Semiconductor Nanostructures)
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14 pages, 4021 KiB  
Article
Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
by Roman B. Adamov, Daniil Pashnev, Vadim A. Shalygin, Maria D. Moldavskaya, Maxim Ya. Vinnichenko, Vytautas Janonis, Justinas Jorudas, Saulius Tumėnas, Paweł Prystawko, Marcin Krysko, Maciej Sakowicz and Irmantas Kašalynas
Appl. Sci. 2021, 11(13), 6053; https://0-doi-org.brum.beds.ac.uk/10.3390/app11136053 - 29 Jun 2021
Cited by 12 | Viewed by 2178
Abstract
Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance and transmittance spectra of the selected [...] Read more.
Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance and transmittance spectra of the selected heterostructure layers were studied after the top layers were removed by a reactive ion etching. Results were numerically analyzed using the transfer matrix method taking into account the high-frequency electron conductivity via a Drude model and complex dielectric permittivity of each epitaxial layer via a one-phonon-resonance approximation. Good agreement between the experiment and theory was achieved revealing the temperature dependent electron effective mass in AlGaN/AlN/GaN high electron mobility transistor structures and the small damping factors of optical phonons due to high crystal quality of the epitaxial layers fabricated on the SiC substrate. Full article
(This article belongs to the Special Issue III-V Semiconductor Nanostructures)
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