Sintering Phenomena and Microstructural Control — Volume II

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (28 February 2022) | Viewed by 4036

Special Issue Editor


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Guest Editor
School of Materials Science and Engineering, Gyeongsang National University (GNU), Jinjudaero 501, Jinju-si, Gyeongnam 660-701, Korea
Interests: sintering and related phenomena; interfacial structures and phenomena during sintering; effect of interface structure and chemistry on microstructural evolution, grain growth and densification; dielectric/ferroelectric/piezoelectric ceramics; and magnetic and multiferroic ceramics
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Special Issue Information

Dear Colleagues,

Sintering is a solidification technique by which powder can be compacted with energy, in particular thermal energy but also light and electric energy. This technique is one of the oldest human technologies and dates back to the prehistoric era when it was first used to anneal pottery.

Microstructural development via controlling densification and grain growth is an essential technology to enhance the properties (electrical, thermal, mechanical, optical, etc.) of inorganic materials, including metals, ceramics, and their composites, in related industrial applications. The sintering process originally transported the atoms in the materials by decreasing the interface energy. The atoms can move through interfaces such as grain boundary, surface, and solid–liquid interface. Therefore, it is imperative that we understand the interface structure and phenomena during sintering.

The purpose of the Special Issue “Sintering Phenomena and Microstructural Control” is to reveal and share current efforts concerning sintering and its related properties. This Special Issue covers, but is not limited to, the following topics:

- surface/grain boundary and interface structure;

- densification and related phenomena;

- microstructure development;

- computer simulation and modeling of grain growth and microstructural development;

- other microstructure-related topics.

We hope to use this Special Issue to connect the basic science and application of materials.

Dr. Kyoung-Seok Moon
Guest Editor

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Keywords

  • sintering
  • grain growth
  • densification
  • microstructure
  • interface
  • grain boundary
  • solidification
  • liquid phase sintering
  • solid-state sintering

Published Papers (2 papers)

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Research

9 pages, 3507 KiB  
Article
Effects of the Sn4+ Substitution and the Sintering Additives on the Sintering Behavior and Electrical Properties of PLZT
by Jeoung-Sik Choi, Dong-Chul Kim, Hyo-Soon Shin, Dong-Hun Yeo and Joon-Hyung Lee
Appl. Sci. 2022, 12(5), 2591; https://0-doi-org.brum.beds.ac.uk/10.3390/app12052591 - 02 Mar 2022
Cited by 4 | Viewed by 1747
Abstract
(Pb, La)(Zr, Ti)O3 (PLZT) with antiferroelectric properties can be applied as a capacitor whose capacitance increases in a high electric field. From this, we obtained a high sintering density at 950 °C by adding low-temperature sintering additives, 8.0 wt% of PbO and [...] Read more.
(Pb, La)(Zr, Ti)O3 (PLZT) with antiferroelectric properties can be applied as a capacitor whose capacitance increases in a high electric field. From this, we obtained a high sintering density at 950 °C by adding low-temperature sintering additives, 8.0 wt% of PbO and 2.5 wt% of ZnO, simultaneously to a (Pb0.88, La0.12)(Zr0.86, Ti0.14)O3 composition. The change in electrical characteristics was confirmed in terms of Sn4+ substitution, resulting in no change in the sintering density by Sn4+ substitution. However, as the amount of Sn4+ substitution increases, the dielectric constant gradually decreases from 1300 to 700, and the grain size decreases from about 4 to 1 µm in terms of microstructure. In the crystal structure analysis, the general formation of a single perovskite structure was confirmed. The results of the hysteresis curve measurement revealed that the breakdown electric field increases from 4 to 9 kV·mm−1 as the amount of Sn4+ substitution gradually increases. However, polarization decreases in the same way as the permittivity trend. The composition exhibits excellent electrical properties when the ratio of Sn4+ is 0.4: a high energy storage density of 3.5 J·cm−3, energy efficiency of 80%, and breakdown electric field of about 8.5 kV·mm−1. Full article
(This article belongs to the Special Issue Sintering Phenomena and Microstructural Control — Volume II)
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12 pages, 3307 KiB  
Article
Synthesis, Characterization, and Electromagnetic Wave Absorbing Properties of M12+–M24+ Substituted M-Type Sr-Hexaferrites
by Jae-Uk Kim and Young-Min Kang
Appl. Sci. 2021, 11(18), 8669; https://0-doi-org.brum.beds.ac.uk/10.3390/app11188669 - 17 Sep 2021
Cited by 2 | Viewed by 1821
Abstract
Mn–Ti, Zn–Ti, Zn–Zr substituted M-type Sr-hexaferrites (SrM), SrFe12−2xM1xM2xO19 (0 ≤ x ≤ 2.0, M1 = Mn or Zn; M2 = Ti or Zr) were synthesized, and their solubility, crystalline structure, and high-frequency [...] Read more.
Mn–Ti, Zn–Ti, Zn–Zr substituted M-type Sr-hexaferrites (SrM), SrFe12−2xM1xM2xO19 (0 ≤ x ≤ 2.0, M1 = Mn or Zn; M2 = Ti or Zr) were synthesized, and their solubility, crystalline structure, and high-frequency properties were studied. Zn–Zr substitution caused a relatively large lattice parameter change and resulted in lower solubility (x ≤ 1.0) in the M-type phase compared with Mn–Ti and Zn–Ti substitutions. However, the ferromagnetic resonance frequency (fFMR) effectively decreased with increasing x in SrFe12−2xZnxZrxO19 (Zn–Zr:SrM) (0 ≤ x ≤ 1.0) and the electromagnetic wave (EM) absorption frequency also varied according to the shift in fFMR in the 7–18 GHz range. This is attributed to a gradual decrease in the magnetocrystalline anisotropy of Zn–Zr:SrM (0 ≤ x ≤ 1.0) with an increase in x. Zn–Zr:SrM (x = 0.9)–epoxy(10 wt%) composites exhibited a high EM absorption in the X-band (8–12 GHz) with the lowest reflection loss of <−45 dB. The sample with x = 0.8 showed a broad Ku band (12–18 GHz) absorption performance satisfying RL <−19 dB at 11 ≤ f ≤ 18 GHz. Full article
(This article belongs to the Special Issue Sintering Phenomena and Microstructural Control — Volume II)
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