Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits. Full article

In recent years, THz imaging techniques have been used in several fields of application. At the beginning of the century, the low availability of powerful THz sources was one of the limiting factors to the advancement of THz technology. At the ENEA center in Frascati, two Free Electron Lasers (FELs) operating in the THz spectral region were available at that time, making it possible to exploit all the features of THz imaging. In this paper, we will describe an alternative THz imaging technique, developed over 15 years of studies at the ENEA center of Frascati, and its application in the art conservation field, reporting the latest results of such studies on the optical properties of pigments in the GHz-THz region of the spectrum, on the possibility of detecting biological weeds under mosaic tiles and on the THz analysis of ancient leather wallpapers. This alternative technique was first developed in the framework of a bilateral collaboration between Japan and Italy, the THz-ARTE Project, which involved NICT (Tokyo), NNRICP (Nara), ENEA (Frascati) and IFAC-CNR (Florence). Most of the THz imaging techniques at that time were based on THz-Time Domain (THz-TD) devices. In the paper will be described how this alternative technique is able to measure the phase of the reflected radiation, thus providing information on the optical properties of the materials under study, such as mural paintings and mosaics. This makes it possible to detect the presence of hidden artworks, additional elements under paint layers, and dielectric materials. To describe the potential and the limits of this alternative imaging technique we will start from a description of the first THz imaging setup at the ENEA center of Frascati, based upon a THz Free Electron Laser. A description of the theoretical principle underlying this technique will be given. The first results in the field of art conservation are summarized, while the new results of a systematic study on the optical properties of pigments are reported and the realization of a portable THz imaging device, and its application “on site” for the analysis of frescoes are shown. The success of this prototype lead to the identification of different types of artworks as possible targets to be studied. New results about the ability of detecting water, and possibly the water content of biological weeds, under mosaic tiles are described, while new experimental measurements on Leather Wallpapers, both “in situ” and in a laboratory environment, are discussed later. A final analysis on the pro and the cons of this alternative imaging technique and on its possible utilization with the developed prototype is carried out together with the considerations on possible future developments and its potential use as an extension of other imaging techniques. Full article

Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz illumination. The response of the MODFET has been characterized using a two-tones solid-state continuous wave source at 0.15 and 0.30 THz. The DC drain-to-source voltage of 500-nm gate length transistors transducing the sub-THz radiation (photovoltaic mode) exhibited a non-resonant response in agreement with literature results. Two configurations of the illumination were investigated: (i) front side illumination in which the transistor was shined on its top side, and (ii) back illumination side where the device received the sub-THz radiation on its bottom side, i.e., on the Si substrate. Under excitation at 0.15 THz clear evidence of the coupling of terahertz radiation by the bonding wires was found, this coupling leads to a stronger response under front illumination than under back illumination. When the radiation is shifted to 0.3 THz, as a result of a lesser efficient coupling of the EM radiation through the bonding wires, the response under front illumination was considerably weakened while it was strengthened under back illumination. Electromagnetic simulations explained this behavior as the magnitude of the induced electric field in the channel of the MODFET was considerably stronger under back illumination. Full article

Terahertz (THz) quantum cascade laser sources based on optical nonlinearity are the only electrically pumped monolithic semiconductor sources operable at room temperature in the 0.6–6 THz range. We investigated the temperature dependence of the imaging characteristics of a broadband THz nonlinear quantum cascade laser and evaluated several important properties: the spectrum, far-field pattern and THz imaging results. Consequently, we found that the far-field patterns were single-lobed Gaussian-like, and THz images were well-resolved despite the lower operating temperature of the device. The stable temperature-performance indicates that this broadband THz source is promising for THz imaging applications. Full article

A terahertz (THz) thermal sensor has been developed by using a periodically corrugated gold waveguide. A defect was positioned in the middle of this waveguide. The periodicities of waveguides can result in Bragg and non-Bragg gaps with identical and different transverse mode resonances, respectively. Due to the local resonance of the energy concentration in the inserted tube, a non-Bragg defect state (NBDS) was observed to arise in the non-Bragg gap. It exhibited an extremely narrow transmission peak. The numerical results showed that by using the here proposed waveguide structure, a NBDS would appear at a resonance frequency of 0.695 THz. In addition, a redshift of this frequency was observed to occur with an increase in the ambient temperature. It was also found that the maximum sensitivity can reach 11.5 MHz/K for an optimized defect radius of 0.9 times the mean value of the waveguide inner tube radius, and for a defect length of 0.2 (or 0.8) times the corrugation period. In the present simulations, a temperature modification of the Drude model was also used. By using this model, the thermal sensing could be realized with an impressive sensitivity. This THz thermal sensor is thereby very promising for applications based on high-precision temperature measurements and control. Full article

We demonstrate terahertz single-pixel imaging is improved by using a photomodulator based on silicon passivated with SiO ${}_2$ . By exploring various SiO ${}_2$ thicknesses, we show that the modulation factor of the as-fabricated terahertz photomodulator can reach 0.9, three times that based on bare silicon. This improvement originates from chemical passivation, as well as anti-reflection. Single-pixel imaging experiments based on the compressed sensing method show that reconstructed images adopting the new photomodulator have better quality than the conventional terahertz modulator based on bare silicon. Since the passivation process is routine and low cost, we expect this work will reduce the cost of terahertz photomodulator and single-pixel THz imaging, and advance their applications. Full article

The demand for internal nondestructive testing and inspection techniques is rapidly increasing. Using a continuous wave (CW) terahertz (THz) imaging system, we demonstrate that the internal defects in cross-linked polyethylene (XLPE) plates for power cable insulation can be detected. In a coherent detection scheme based on photomixers, which serve as the THz emitters and receivers, the change of phase occurring with the defects inside the XLPE plates is distinctly measured by the change in the amplitude of the transmitted THz waves. According to the two-dimensional images of THz waves transmitted through the XLPE plates, defects of up to 0.5 mm size located inside the XLPE plates can be detected by the internal nondestructive examination method based on CW–THz waves. This technique will be useful for internal nondestructive testing and inspection of insulation materials that require high resolution in various industries, including the automobiles, electronics, and electrical power industries. Full article

In this article we present and numerically investigate a broadband all-silicon terahertz (THz) absorber which consists of a single-layer periodic array of a diamond metamaterial layer placed on a silicon substrate. We simulated the absorption spectra of the absorber under different structural parameters using the commercial software Lumerical FDTD solutions, and analyzed the absorption mechanism from the distribution of the electromagnetic fields. Finally, the absorption for both transverse electric (TE) and transverse magnetic (TM) polarizations under different incident angles from 0 to 70° were investigated. Herein, electric and magnetic resonances are proposed that result in perfect broadband absorption. When the absorber meets the impedance matching principle in accordance with the loss mechanism, it can achieve a nearly perfect absorption response. The diamond absorber exhibits an absorption of ~100% at 1 THz and achieves an absorption efficiency >90% within a bandwidth of 1.3 THz. In addition, owing to the highly structural symmetry, the absorber has a polarization-independent characteristic. Compared with previous metal–dielectric–metal sandwiched absorbers, the all-silicon metamaterial absorbers can avoid the disadvantages of high ohmic losses, low melting points, and high thermal conductivity of the metal, which ensure a promising future for optical applications, including sensors, modulators, and photoelectric detection devices. Full article

The gyrotrons are powerful sources of coherent radiation that can operate in both pulsed and CW (continuous wave) regimes. Their recent advancement toward higher frequencies reached the terahertz (THz) region and opened the road to many new applications in the broad fields of high-power terahertz science and technologies. Among them are advanced spectroscopic techniques, most notably NMR-DNP (nuclear magnetic resonance with signal enhancement through dynamic nuclear polarization, ESR (electron spin resonance) spectroscopy, precise spectroscopy for measuring the HFS (hyperfine splitting) of positronium, etc. Other prominent applications include materials processing (e.g., thermal treatment as well as the sintering of advanced ceramics), remote detection of concealed radioactive materials, radars, and biological and medical research, just to name a few. Among prospective and emerging applications that utilize the gyrotrons as radiation sources are imaging and sensing for inspection and control in various technological processes (for example, food production, security, etc). In this paper, we overview the current status of the research in this field and show that the gyrotrons are promising radiation sources for THz sensing and imaging based on both the existent and anticipated novel techniques and methods. Full article