Physics and Applications of Nanostructures in Electronics and Optoelectronics

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Nanotechnology and Applied Nanosciences".

Deadline for manuscript submissions: closed (10 February 2022) | Viewed by 2585

Special Issue Editor


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Guest Editor
Faculty of Physics, University of Bucharest, 077125 Bucuresti-Magurele, Romania
Interests: charge and spin transport in nanostructures; physics of nanodevices; architectures for computing, including quantum computing; plasmonics; metamaterials and metasurfaces; characterization and propagation of structured light beams, including optical vortices
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Special Issue Information

Dear Colleagues,

Nanoscience and nanotechnologies have grown into a booming area of research with many applications in various areas of sciences, such as nanoelectronics, biology, quantum technologies, and quantum computing. The physics of nanostructures represents a challenge for atomically thin materials and needs precise modeling to predict the performances of devices based on them. This Special Issue will be focused on the following topics:

  • the physics of atomically thin materials
  • electronic and photonic devices based on atomically thin materials
  • nanoscale sensors for mechanical, electrical, and electromagnetic applications
  • non-standard computing based on nanodevices, such as quantum computing and neuromorphic computing
  • energy harvesting based on nanomaterials

Prof. Dr. Daniela Dragoman
Guest Editor

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Keywords

  • atomically thin materials
  • electronic and photonic nanodevices
  • quantum computing
  • neoromorphic computing
  • sensors
  • energy harvesting

Published Papers (1 paper)

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Research

12 pages, 1828 KiB  
Article
A Multi-Objective Optimization of 2D Materials Modified Surface Plasmon Resonance (SPR) Based Sensors: An NSGA II Approach
by Pericle Varasteanu and Mihaela Kusko
Appl. Sci. 2021, 11(10), 4353; https://0-doi-org.brum.beds.ac.uk/10.3390/app11104353 - 11 May 2021
Cited by 6 | Viewed by 1962
Abstract
Modifying the structure of surface plasmon resonance based sensors by adding 2D materials has been proven to considerably enhance the sensor’s sensitivity in comparison to a traditional three layer configuration. Moreover, a thin semiconductor film placed on top of the metallic layer and [...] Read more.
Modifying the structure of surface plasmon resonance based sensors by adding 2D materials has been proven to considerably enhance the sensor’s sensitivity in comparison to a traditional three layer configuration. Moreover, a thin semiconductor film placed on top of the metallic layer and stacked together with 2D materials enhances even more sensitivity, but at the cost of worsening the plasmonic couplic strength at resonance (minimum level of reflectivity) and broadening the response. With each supplementary layer added, the complexity of optimizing the performance increases due to the extended parameter space of the sensor. This study focused on overcoming these difficulties in the design process of sensors by employing a multi-objective genetic algorithm (NSGA II) alongside a transfer matrix method (TMM) and, at the same time, optimizing the sensitivity to full width at half maximum (FWHM), and the reflectivity level at a resonance for a four layer sensor structure. Firstly, the thin semiconductor’s refractive index was optimized to obtain the maximum achievable sensitivity with a narrow FWHM and a reflectivity level at a resonance of almost zero. Secondly, it was shown that refractive indices of barium titanate (BaTiO3) and silicon (Si) are the closest to the optimal indices for the silver—graphene/WS2 and MoS2 modified structures, respectively. Sensitivities up to 302 deg/RIU were achieved by Ag–BaTIO3–graphene/WS2 configurations with an FWHM smaller than 8 deg and a reflectivity level less than 0.5% at resonance. Full article
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