Wide Band Gap Semiconductors and Devices: From Materials Research to Device Implementation

Dear Colleagues,

Over the last couple of decades, wide bandgap semiconductors have moved from material research and into industrial applications within lighting/optoelectronics and high-power electronics. As an example, wide bandgap semiconductors SiC and GaN devices are starting to make an impact on the power device market, especially due to improved semiconductor properties. Key performance parameters include high breakdown field strengths and improved thermal conductivity. While such properties are promising, a number of challenges exist related to device performance stability under application conditions due to oxide quality or interface defects among others as well as device variation. This, at least seen from an application implementation point view, may be seen as a risk compared to the more well-known properties of silicon that have dominated the power market so far. The topic of this issue is focused on the latest development in wide bandgap devices within power as well as in optoelectronic applications with special attention to how the new semiconductor material and device perform under high load conditions. By combining lessons learned in semiconductor material synthesis with those from device implementation this Special Issue will help bring knowledge from material development into the industrial applications.

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• SiC and GaN power devices, including vertical GaN structures.
• Nitride semiconductors
• Ultrawide bandgap devices
• Low parasitic packaging of power devices
• Device synthesis techniques and design
• Developments in oxide and interface quality
• Material defects and device performance
• New device characterization schemes and innovative material diagnostic methods