Growth of Catalyst-Free InN Nanocolumns

A special issue of Catalysts (ISSN 2073-4344). This special issue belongs to the section "Catalytic Materials".

Deadline for manuscript submissions: closed (30 April 2022) | Viewed by 3634

Special Issue Editors

Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan
Interests: characterization of optoelectronic materials; fabrication of III-V nitrides; photovoltaic devices
Special Issues, Collections and Topics in MDPI journals
Electrical Engineering Program C, Yuan-Ze University, 135 Yuan-Tung Road, Chung-Li 32003, Taiwan
Interests: Light emitting diodes, Characterization of III-V optoelectronic devices
Department and Graduate Institute of Electronic Engineering, Chang Gung University, 33302 Taoyuan, Taiwan
Interests: Nanostructured materials, Material characterization

Special Issue Information

Dear Colleagues,

Indium nitride (InN) has been a potential material for application in a wide class of optoelectronic devices due to its narrow direct band-gap, small effective mass, and high electron mobility. In addition, it is expected to be developed into possible device applications of III-nitride compounds to the whole spectral range, from UV to near-IR while alloyed with AlN and GaN. Considerable progress in device applications has been demonstrated recently, including the fabrication of thin-film transistors, infrared photodetectors, lasers and optical amplifiers, photovoltaic converters, and a number of terahertz-range devices.

However, high-quality InN is the most difficult among III-nitrides, mainly because of its low decomposition temperature and the large lattice mismatch with the common substrates. These factors result in a high concentration of defects and hamper the development of high-performance InN-related devices. As predicted in theory and demonstrated experimentally, one-dimensional (1D) nanostructures allow the growth of high-quality nitride material on various substrates and significantly reduce the density of defects. Catalyst-free and catalyst-assisted methods have been widely used for the synthesis of low-dimensional III-nitrides nanostructures. Submissions to this Special Issue, entitled “Growth of Catalyst-Free InN Nanocolumns,” are welcome in the form of original research papers or short reviews that reflect the state of research on this important subject. Topics of interest include, but are not limited to: mechanisms of 1D InN growth, characterization of 1D InN nanostructures, and applications of InN-related nanostructures.

Prof. Dr. Shou-Yi Kuo
Prof. Dr. Fang-I Lai
Dr. Wei-Chun Chen
Dr. Jui-Fu Yang
Guest Editors

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Keywords

  • Indium nitride
  • Nanocolumn
  • Catalyst-free
  • Optoelectronic device
  • Nanostructure

Published Papers (2 papers)

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Research

12 pages, 2532 KiB  
Article
Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE
by Fang-I Lai, Jui-Fu Yang, Woei-Tyng Lin, Wei-Chun Chen, Yu-Chao Hsu and Shou-Yi Kuo
Catalysts 2021, 11(8), 886; https://0-doi-org.brum.beds.ac.uk/10.3390/catal11080886 - 22 Jul 2021
Cited by 1 | Viewed by 1474
Abstract
In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics of different surface dimensionalities. The self-catalyzed epitaxial growth of InN nanorods grown by metal–organic molecular-beam epitaxy on GaN/Al2O3(0001) [...] Read more.
In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics of different surface dimensionalities. The self-catalyzed epitaxial growth of InN nanorods grown by metal–organic molecular-beam epitaxy on GaN/Al2O3(0001) substrates has been demonstrated. The substrate temperature is dominant in controlling the growth of nanorods. A dramatic morphological change from 2D-like to 1D nanorods occurs with decreasing growth temperature. The InN nanorods have a low dislocation density and good crystalline quality, compared with InN films. In terms of optical properties, the nanorod structure exhibits strong recombination of Mahan excitons in luminescence, and an obvious spatial correlation effect in phonon dispersion. The downward band structure at the nanorod surface leads to the photon energy-dependent lifetime being upshifted to the high-energy side. Full article
(This article belongs to the Special Issue Growth of Catalyst-Free InN Nanocolumns)
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8 pages, 1847 KiB  
Article
Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns
by Fang-I Lai, Jui-Fu Yang, Wei-Chun Chen, Dan-Hua Hsieh, Woei-Tyng Lin, Yu-Chao Hsu and Shou-Yi Kuo
Catalysts 2021, 11(6), 737; https://0-doi-org.brum.beds.ac.uk/10.3390/catal11060737 - 16 Jun 2021
Cited by 2 | Viewed by 1644
Abstract
In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated that the InN morphology can be controlled by [...] Read more.
In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED-TRPL) analysis. Experimental results indicated that the InN morphology can be controlled by the growth temperature, from one-dimensional (1D) nanorods to two-dimensional (2D) films. Moreover, donor-like nitrogen vacancy (VN) is responsible for the increase in carrier concentration due to the lowest formation energies in the n-type InN samples. The PL results also reveal that the energies of emission peaks are higher in the InN samples with 2D features than that with 1D features. These anomalous transitions are explained as the recombination of Mahan excitons and localized holes, and further proved by a theoretical model, activation energy and photon energy-dependent lifetime analysis. Full article
(This article belongs to the Special Issue Growth of Catalyst-Free InN Nanocolumns)
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