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Crystals
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III-Nitride-Based Light-Emitting Devices
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III-Nitride-Based Light-Emitting Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (10 February 2023) | Viewed by 18355

Special Issue Editors

Dr. Daisuke Iida

E-Mail Website
Guest Editor
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Interests: InGaN; micro-LEDs; III-nitride semiconductors; MOCVD growth; optoelectronics; semiconductor materials and devices
Dr. Zhe Zhuang

E-Mail Website
Guest Editor
Advanced Photonic Center, School of Electronic Science & Engineering, Southeast University, Nanjing 210096, China
Interests: III-nitride semiconductors; optoelectronic devices; epitaxial growth; nanofabrication; nanophotonics

Special Issue Information

Dear Colleagues,

III-nitride semiconductors are wide bandgap materials, and their alloys can cover a wide spectral range, from ultraviolet to infrared. The invention and development of efficient InGaN-based blue light-emitting diodes (LEDs) represents a tremendously successful use of these semiconductors. High-performance devices such as violet/blue/green LEDs and laser diodes (LDs) have been commercialized using the established technology of epitaxial growth and device processing.

Advanced epitaxial growth and device processing technologies should be explored to develop novel light-emitting devices. These technologies can contribute to developing high-performance devices such as micro-LEDs, visible light-based communication, and UV-LEDs. Many emerging applications of light-emitting devices have been demonstrated; therefore, proper LED epitaxial growth and processing techniques must be developed.

We would like to invite researchers to contribute to this Special Issue. The potential topics include, but are not limited to:

  • Long-wavelength emissions of InGaN-based LEDs;
  • Micro-LEDs for displays and light communication;
  • Visible/UV LDs;
  • UV LEDs;
  • Low-dimensional structures/nanostructures;
  • LED processing;
  • Material growth on novel substrates;
  • LED epitaxy and characterization.

Dr. Daisuke Iida
Dr. Zhe Zhuang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • light-emitting diodes (LEDs)
  • micro-LEDs
  • laser diodes (LDs)
  • UV LEDs
  • InGaN
  • AlGaN
  • nanostructures
  • epitaxial growth
  • MOVPE
  • MBE

Published Papers (8 papers)

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Research

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12 pages, 4754 KiB  
Communication
Optoelectronic Simulations of InGaN-Based Green Micro-Resonant Cavity Light-Emitting Diodes with Staggered Multiple Quantum Wells
by Tsau-Hua Hsieh, Wei-Ta Huang, Kuo-Bin Hong, Tzu-Yi Lee, Yi-Hong Bai, Yi-Hua Pai, Chang-Ching Tu, Chun-Hui Huang, Yiming Li and Hao-Chung Kuo
Crystals 2023, 13(4), 572; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst13040572 - 27 Mar 2023
Cited by 5 | Viewed by 1827
Abstract
In this research, we compared the performance of commercial μ-LEDs and three-layered staggered QW μ-LED arrays. We also investigated the self-heating effect. We proposed a green micro-resonant cavity light-emitting diode (µ-RCLED) that consists of a three-layer staggered InGaN with multiple quantum wells (MQWs), [...] Read more.
In this research, we compared the performance of commercial μ-LEDs and three-layered staggered QW μ-LED arrays. We also investigated the self-heating effect. We proposed a green micro-resonant cavity light-emitting diode (µ-RCLED) that consists of a three-layer staggered InGaN with multiple quantum wells (MQWs), a bottom layer of nanoporous n-GaN distributed Bragg reflectors (DBRs), and a top layer of Ta2O5/SiO2 DBRs. We systematically performed simulations of the proposed µ-RCLEDs. For the InGaN MQWs with an input current of 300 mA, the calculated wavefunction overlaps are 8.8% and 18.1% for the regular and staggered structures, respectively. Furthermore, the staggered MQWs can reduce the blue-shift of electroluminescence from 10.25 nm, obtained with regular MQWs, to 2.25 nm. Due to less blue-shift, the output power can be maintained even at a high input current. Conversely, by employing 6.5 pairs of Ta2O5/SiO2 DBRs stacks, the full width at half maximum (FWHM) can be significantly reduced from 40 nm, obtained with ordinary µ-LEDs, to 0.3 nm, and a divergence angle smaller than 60° can be obtained. Our simulation results suggest that the µ-RCLEDs can effectively resolve the wavelength instability and color purity issues of conventional µ-LEDs. Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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10 pages, 4452 KiB  
Article
Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells
by Narihito Okada and Kazuyuki Tadatomo
Crystals 2022, 12(10), 1373; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12101373 - 27 Sep 2022
Viewed by 1265
Abstract
We report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO-InGaN layers on a patterned InGaN template. The full [...] Read more.
We report the growth and characterization of thick, completely relaxed {11-22}-oriented InGaN layers using epitaxial lateral overgrowth (ELO). Although it was difficult to grow ELO-InGaN layers on patterned GaN templates, we succeeded in growing ELO-InGaN layers on a patterned InGaN template. The full width at half maximum of the X-ray rocking curve of ELO-InGaN on the InGaN templates was less than that of non-ELO InGaN. The photoluminescence intensity of InGaN/GaN multiple quantum wells on ELO-InGaN was approximately five times stronger than that on the {11-22} GaN template. Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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8 pages, 2013 KiB  
Article
Study of High Polarized Nanostructure Light-Emitting Diode
by Kuo-Hsiung Chu, Jo-Hsiang Chen, Kuo-Bin Hong, Yu-Ming Huang, Shih-Wen Chiu, Fu-Yao Ke, Chia-Wei Sun, Tsung-Sheng Kao, Chin-Wei Sher and Hao-Chung Kuo
Crystals 2022, 12(4), 532; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12040532 - 11 Apr 2022
Cited by 3 | Viewed by 2095
Abstract
In this study, we investigated the characteristic difference between the two different configurations of the three-dimensional shell–core nanorod LED. We achieve a degree of polarization of 0.545 for tip-free core–shell nanorod LED and 0.188 for tip core–shell nanorod LED by combining the three-dimensional [...] Read more.
In this study, we investigated the characteristic difference between the two different configurations of the three-dimensional shell–core nanorod LED. We achieve a degree of polarization of 0.545 for tip-free core–shell nanorod LED and 0.188 for tip core–shell nanorod LED by combining the three-dimensional (3D) structure LED with photonic crystal. The ability of low symmetric modes generated by photonic crystals to enhance degree of polarization has been demonstrated through simulations of photonic crystals. In addition, light confinement in GaN-based nanorod structures is induced by total internal reflection at the GaN/air interface. The combination of 3D core–shell nanorod LED and photonic crystals cannot only produce a light source with a high degree of polarization, but also a narrow divergence angle up to 56°. These 3D LEDs may pave the way for future novel optoelectronic components. Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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10 pages, 4804 KiB  
Article
Improving Mini-LED Pattern Quality by Using Distributed Bragg Reflector and Digital Twin Technology
by Shu-Hsiu Chang, Che-Hsuan Huang, Chatherine Langpoklakpam, Konthoujam James Singh, Chien-Chung Lin and Hao-Chung Kuo
Crystals 2022, 12(4), 529; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12040529 - 10 Apr 2022
Viewed by 1799
Abstract
Fine-pitch backlight technology is rapidly evolving along with display technology, and chips are increasingly designed for direct integration with modules. This study used a distributed Bragg reflector (DBR) for mini light-emitting diode (mini-LED) backlights with high dynamic contrast and developed a digital twin [...] Read more.
Fine-pitch backlight technology is rapidly evolving along with display technology, and chips are increasingly designed for direct integration with modules. This study used a distributed Bragg reflector (DBR) for mini light-emitting diode (mini-LED) backlights with high dynamic contrast and developed a digital twin design by using a light-emitting diode (LED) and a distributed Bragg reflector (DBR). Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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8 pages, 14175 KiB  
Article
Pulsed Sputtering Preparation of InGaN Multi-Color Cascaded LED Stacks for Large-Area Monolithic Integration of RGB LED Pixels
by Soichiro Morikawa, Kohei Ueno, Atsushi Kobayashi and Hiroshi Fujioka
Crystals 2022, 12(4), 499; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12040499 - 04 Apr 2022
Cited by 9 | Viewed by 2268
Abstract
Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition (PSD) and a standard photolithographical technique. The PSD allows for [...] Read more.
Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition (PSD) and a standard photolithographical technique. The PSD allows for sequential epitaxial growth of blue and green InGaN LED stacks connected with the GaN based tunneling junction. The tunneling junctions serve as protective layers on p-type GaN against the dry etching damage and hole injection layers in each blue and green emission InGaN active layer. The tunneling junction-connected multi-color InGaN LED stack contributes to the high-density and large-area monolithic integration of RGB micro-LEDs using standard photolithography and the ICP-dry etching method. Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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7 pages, 955 KiB  
Article
Investigation on Light Extraction Behavior of Surface Plasmon-Coupled Deep-Ultraviolet LED in Different Emission Directions
by Mei Ge, Yi Li, Youhua Zhu and Meiyu Wang
Crystals 2022, 12(1), 82; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12010082 - 07 Jan 2022
Cited by 2 | Viewed by 1271
Abstract
The light extraction behavior of an AlGaN-based deep-ultraviolet LED covered with Al nanoparticles (NPs) is investigated by three-dimensional finite-difference time-domain simulation. For the transmission spectra of s- and p-polarizations in different emission directions, the position of maximum transmittance can be changed from (θ [...] Read more.
The light extraction behavior of an AlGaN-based deep-ultraviolet LED covered with Al nanoparticles (NPs) is investigated by three-dimensional finite-difference time-domain simulation. For the transmission spectra of s- and p-polarizations in different emission directions, the position of maximum transmittance can be changed from (θ = 0°, λ = 273 nm) to (θ = 0°, λ = 286 nm) by increasing the diameter of Al NPs from 40 nm to 80 nm. In the direction that is greater than the critical angle, the transmittance of s-polarization is very small due to the strong absorption of Al NPs, while the transmittance spectrum of p-polarization can be observed obviously for the 80 nm Al NPs structure. For a ~284 nm AlGaN-based LED with surface plasmon (SP) coupling, although the luminous efficiency is significantly improved due to the improvement of the radiation recombination rate as compared with the conventional LED, the light extraction efficiency (LEE) is lower than 2.61% of the conventional LED without considering the lateral surface extraction and bottom reflection. The LEE is not greater than ~0.98% (~2.12%) for an SP coupling LED with 40 nm (80 nm) Al NPs. The lower LEE can be attributed to the strong absorption of Al NPs. Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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Review

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13 pages, 2029 KiB  
Review
A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
by Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi and Hiroshi Amano
Crystals 2023, 13(3), 524; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst13030524 - 19 Mar 2023
Cited by 1 | Viewed by 1674
Abstract
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of the solutions to increase a light output power. To this end, [...] Read more.
Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of the solutions to increase a light output power. To this end, the present study focuses on developing a transparent AlGaN homoepitaxial tunnel junction (TJ) as the anode of a deep-UV LED. Deep-UV LEDs composed of n+/p+-type AlGaN TJs were fabricated under the growth condition that reduced the carrier compensation in the n+-type AlGaN layers. The developed deep-UV LED achieved an operating voltage of 10.8 V under a direct current (DC) operation of 63 A cm−2, which is one of the lowest values among devices composed of AlGaN tunnel homojunctions. In addition, magnesium zinc oxide (MgZnO)/Al reflective electrodes were fabricated to enhance the output power of the AlGaN homoepitaxial TJ LED. The output power was increased to 57.3 mW under a 63 A cm−2 DC operation, which was 1.7 times higher than that achieved using the conventional Ti/Al electrodes. The combination of the AlGaN-based TJ and MgZnO/Al reflective contact allows further improvement of the light output power. This study confirms that the AlGaN TJ is a promising UV-transmittance structure that can achieve a high light-extraction efficiency. Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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9 pages, 2607 KiB  
Review
Progress of InGaN-Based Red Micro-Light Emitting Diodes
by Panpan Li, Hongjian Li, Matthew S. Wong, Philip Chan, Yunxuan Yang, Haojun Zhang, Mike Iza, James S. Speck, Shuji Nakamura and Steven P. Denbaars
Crystals 2022, 12(4), 541; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12040541 - 12 Apr 2022
Cited by 23 | Viewed by 5136
Abstract
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect. Moreover, the InGaN red µLEDs exhibit a much more robust device [...] Read more.
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect. Moreover, the InGaN red µLEDs exhibit a much more robust device performance even operating at a high temperature of up to 400 K. We review the progress of InGaN red μLEDs. Novel growth methods to relax the strain and increase the growth temperature of InGaN red quantum wells are discussed. Full article
(This article belongs to the Special Issue III-Nitride-Based Light-Emitting Devices)
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