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Crystals
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Advances in Gallium Nitride-Based Materials and Devices
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Advances in Gallium Nitride-Based Materials and Devices

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (15 November 2022) | Viewed by 15861

Special Issue Editors

Prof. Dr. Ikai Lo

E-Mail Website
Guest Editor
Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Interests: semiconductor physics; condensed matter physics; magnetism physics
Special Issues, Collections and Topics in MDPI journals
Dr. Damian Pucicki

E-Mail Website
Guest Editor
1. Department of Nanometrology Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, 50-370 Wrocław, Poland
2. Material Science & Engineering Center, Łukasiewicz Research Network – PORT Polish Center for Technology Development, 54-066 Wrocław, Poland
Interests: optoelectronics; semiconductor technology and devices; epitaxy; structural and optical characterization; quantum structures
Dr. Miłosz Grodzicki

E-Mail Website
Guest Editor
1. Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, Wrocław, Poland
2. Łukasiewicz Research Network – PORT Polish Center for Technology Development, 54-066 Wrocław, Poland
Interests: surface science; thin-films; PVD; MBE
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

A current challenge of modern science is the development of better light sources and electronic components able to work with high frequency and power. Gallium nitride (GaN) and other GaN-based alloys in the wurtzite form are very good candidates to fulfil these requirements. Their physicochemical properties predispose them for novel electronic devices. The use of gallium nitride in the semiconductor industry is a merit of intense research carried out for over 30 years. As a breakthrough moment in the development of research topics related to GaN should be considered the mastering of the technique of doping this semiconductor, particularly p-type doping. Despite the recent progress in GaN-based technology, many challenges must be still overcome in material quality and devices design, and for that reason those materials are still of great interest in both research and technology. Well-mastered techniques of growth enable the formation of semiconductor structures with desired electronic parameters through creating GaN-based alloys with other elements. This gives a high possibility of creating diverse substrates for electronic devices.

Therefore, we invite researchers to contribute to this Special Issue on Properties and Engineering of Gallium Nitride-Based Materials and Devices, covering a broad spectrum of topics from basic studies, including experimental and theoretical research, to the application of new electronic materials.

The topics include, but are not limited to:

  1. Growth of GaN-based alloys – 3D crystals, thin films and nanostructures;
  2. Characterization of surface, structural, optic and magnetic properties of the materials and heterostructures;
  3. Theoretical approaches to GaN-based materials and devices;
  4. Application of heterostructures in novel electronics and photonics.

Prof. Dr. Ikai Lo
Dr. Damian Pucicki
Dr. Miłosz Grodzicki
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nitrides
  • GaN
  • AlGaN
  • InGaN
  • heterostructures
  • epitaxy
  • MBE
  • MOCVD
  • surface, structural, and optical characterizations
  • MnGaN

Published Papers (5 papers)

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Research

7 pages, 1711 KiB  
Article
Obtaining Niobium Nitride on n-GaN by Surface Mediated Nitridation Technique
by Piotr Mazur, Agata Sabik, Rafał Lewandków, Artur Trembułowicz and Miłosz Grodzicki
Crystals 2022, 12(12), 1847; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12121847 - 18 Dec 2022
Cited by 2 | Viewed by 2536
Abstract
In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by a surface-mediated nitridation technique. To this end, the physical vapor deposition of the niobium film on GaN is followed by sample [...] Read more.
In this work the n-GaN(1000) surface is used as a source of nitrogen atoms in order to obtain niobium nitride film by a surface-mediated nitridation technique. To this end, the physical vapor deposition of the niobium film on GaN is followed by sample annealing at 1123 K. A thermally induced decomposition of GaN and interfacial mixing phenomena lead to the formation of a niobium nitride compound, which contains Nb from thin film and N atoms from the substrate. The processes allowed the obtaining of ordered NbNx films on GaN. Structural and chemical properties of both the GaN substrate and NbNx films were studied in-situ by surface-sensitive techniques, i.e., X-ray and UV photoelectron spectroscopies (XPS/UPS) and a low-energy electron diffraction (LEED). Then, the NbNx/GaN surface morphology was investigated ex-situ by scanning tunneling microscopy (STM). Full article
(This article belongs to the Special Issue Advances in Gallium Nitride-Based Materials and Devices)
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12 pages, 4874 KiB  
Article
Effect of Cooling Rate on the Crystal Quality and Crystallization Rate of SiC during Rapid Solidification Based on the Solid–Liquid Model
by Xiaotian Guo, Yue Gao, Zihao Meng and Tinghong Gao
Crystals 2022, 12(8), 1019; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12081019 - 22 Jul 2022
Cited by 2 | Viewed by 2720
Abstract
The silicon carbide (SiC) that can achieve better electron concentration and motion control is more suitable for the production of high temperature, high frequency, radiation resistance, and high-power electronic devices. However, the fabrication of the high purity single crystal is challenging, and it [...] Read more.
The silicon carbide (SiC) that can achieve better electron concentration and motion control is more suitable for the production of high temperature, high frequency, radiation resistance, and high-power electronic devices. However, the fabrication of the high purity single crystal is challenging, and it is hard to observe the structural details during crystallization. Here, we demonstrate a study of the crystallization of single-crystal SiC by the molecular dynamic simulations. Based on several structure analysis methods, the transition of the solid–liquid SiC interface from a liquid to a zinc-blende structure is theoretically investigated. The results indicate that most of the atoms in the solid–liquid interface begin to crystallize with rapid solidification at low cooling rates, while crystallization does not occur in the system at high cooling rates. As the quenching progresses, the number of system defects decreases, and the distribution is more concentrated in the solid–liquid interface. A maximum crystallization rate is observed for a cooling rate of 1010 K/s. Moreover, when a stronger crystallization effect is observed, the energy is lower, and the system is more stable. Full article
(This article belongs to the Special Issue Advances in Gallium Nitride-Based Materials and Devices)
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11 pages, 43558 KiB  
Article
Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy
by Huei-Jyun Shih, Ikai Lo, Ying-Chieh Wang, Cheng-Da Tsai, Yu-Chung Lin, Yi-Ying Lu and Hui-Chun Huang
Crystals 2022, 12(3), 417; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12030417 - 17 Mar 2022
Cited by 6 | Viewed by 3529
Abstract
The nearly lattice-matched InxGa1−xN/InyAl1−yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique. The band-gap energy of InxGa1−xN QW in [...] Read more.
The nearly lattice-matched InxGa1−xN/InyAl1−yN epi-layers were grown on a GaN template by plasma-assisted molecular beam epitaxy with a metal modulation technique. The band-gap energy of InxGa1−xN QW in photoluminescence measurement was estimated to be 2.89 eV and the indium concentration (x) was 14.8%. In X-ray photoelectric spectroscopy, we obtained an indium concentration (y) in the InyAl1−yN barrier of 25.9% and the band-offset was estimated to be 4.31 eV. From the atomic layer measurements from high-resolution transmission electron microscopy, the lattice misfit between the InxGa1−xN QW and InyAl1−yN barrier was 0.71%. The lattice-matched InxGa1−xN/InyAl1−yN QWs can therefore be evaluated from the band profiles of III-nitrides for engineering of full-visible-light emitting diode in optoelectronic application. Full article
(This article belongs to the Special Issue Advances in Gallium Nitride-Based Materials and Devices)
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10 pages, 3069 KiB  
Article
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
by Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn and Jong-Won Lim
Crystals 2021, 11(11), 1414; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst11111414 - 19 Nov 2021
Cited by 5 | Viewed by 2904
Abstract
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated [...] Read more.
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface. Full article
(This article belongs to the Special Issue Advances in Gallium Nitride-Based Materials and Devices)
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Graphical abstract

8 pages, 5405 KiB  
Article
Gallium Nitride Metalens for Image Decryption
by Meng-Hsin Chen, Jia-Ying Li and Vin-Cent Su
Crystals 2021, 11(11), 1320; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst11111320 - 29 Oct 2021
Cited by 3 | Viewed by 2097
Abstract
As the demand for secure digital data continues to increase, image encryption and decryption have recently received tremendous attention. The rapid development of ultrathin metasurfaces has mainly been driven by the desire for the introduction of novel methods with which electromagnetic waves can [...] Read more.
As the demand for secure digital data continues to increase, image encryption and decryption have recently received tremendous attention. The rapid development of ultrathin metasurfaces has mainly been driven by the desire for the introduction of novel methods with which electromagnetic waves can be manipulated. As a promising application of metasurfaces, metalenses have shown great potential to replace bulky traditional optical devices. In this work, we present that the images produced by a commercially available projector are encrypted by using the color superposition principle, and the fabricated metalens is subsequently utilized to perform image decryption with an incidence made of white light-emitting diodes (LEDs). The correct positions for image decryption are carefully found by three distinct diode lasers as incident light sources. Recent investigations show that high-performance metalenses can be successfully developed once the suitable dielectric material is chosen. As a consequence, our metalens of high performance is composed of hexagon-resonated elements (HREs) made of gallium nitride (GaN) and is capable of resolving line width as small as 870 nm. The metalens with a smaller diameter of 8 μm is numerically simulated with a diffraction-limited focusing efficiency as high as 92%. This work once again shows that GaN metalenses, as future optics, have great prospects in expanding widespread applications in the near future. Full article
(This article belongs to the Special Issue Advances in Gallium Nitride-Based Materials and Devices)
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