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Crystals
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Frontiers of Semiconductor Lasers
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Frontiers of Semiconductor Lasers

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 October 2022) | Viewed by 33607

Printed Edition Available!
A printed edition of this Special Issue is available here.

Special Issue Editors

Dr. Yongyi Chen

E-Mail Website
Guest Editor
Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences, Changchun 130033, China
Interests: tunable laser; DFB laser; grating coupled laser
Special Issues, Collections and Topics in MDPI journals
Dr. Li Qin

E-Mail Website
Guest Editor
Changchun Institute of Optics, fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, China
Interests: DFB lasers; semiconductor lasers

Special Issue Information

Dear Colleagues,

Semiconductor lasers are an essential light source for applications. Although they have been utilized in optical communication, sensing, and industry for a long time, various problems remain associated with their use. Solving the problems of high power, high speed, single longitudinal mode, narrow linewidth, and so on will lead to the development of new equipment and new services. When it comes to high-power applications, semiconductor lasers are of interest due to their broad stripe and high power with high efficiency, as well as high COMD facets. In terms of information use, on the other hand, semiconductor lasers are of interest due to their high gain, high modulation speed, shorter cavities, etc. Additionally, numerous new technologies such as plasmonics, topological photonic crystals, quantum dots, and organic semiconductor lasers are flourishing every day.

These semiconductor laser technologies will be applied in the near future to a wide variety of applications, from terminals to home appliances, industrial equipment, hospitals, and in various environments where conventional methods are difficult to apply. Nevertheless, and although the basic technical functions of these semiconductor laser technologies already exist, practical and commercial systems are still very limited, and thus, the activation of related research is urgently needed for the development for many applications. Clarifying the superiority of this type of semiconductor laser and the problems that still need to be solved and determining the state of the art of this field, such as materials, devices, subsystems, systems, applications, as well as safety and standardization will be of significant value to a better future society.

For this reason, we have decided to publish a Special Issue that contains the latest results. Although this field is related to frontiers in semiconductor lasers, it is configured by a wide range of technologies, such as materials, devices, systems, and applications as described above. However, this Special Issue mainly invites papers that are related to functional devices in lasers with semiconductor crystals, quantum dots, organic semiconductors, and applications of semiconductor lasers. Another Special Issue shall be prepared for important papers that are slightly outside the scope of this Special Issue, such as individual devices (power transmission and light-receiving devices), etc. Please submit your paper to the Special Issue that more closely matches its content.

Dr. Yongyi Chen
Dr. Li Qin
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor laser
  • laser in industry
  • laser in optical communications
  • laser sensing
  • quantum dot
  • organic semiconductor laser
  • perovskite laser
  • 2D material laser
  • photonic crystal laser
  • topological laser

Published Papers (13 papers)

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Editorial

Jump to: Research, Review

2 pages, 159 KiB  
Editorial
Editorial for Special Issue “Frontiers of Semiconductor Lasers”
by Yongyi Chen and Li Qin
Crystals 2023, 13(2), 349; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst13020349 - 18 Feb 2023
Viewed by 880
Abstract
Since the end of the last century, in which semiconductor lasers were fast developing, this kind of laser and its applications have greatly improved our world [...] Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)

Research

Jump to: Editorial, Review

15 pages, 5029 KiB  
Article
Study of Temperature Effects on the Design of Active Region for 808 nm High-Power Semiconductor Laser
by Shunhua Wu, Te Li, Zhenfu Wang, Lang Chen, Jiachen Zhang, Junyue Zhang, Jiachen Liu, Yeqi Zhang and Liting Deng
Crystals 2023, 13(1), 85; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst13010085 - 02 Jan 2023
Cited by 2 | Viewed by 1549
Abstract
High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospace, and laser pumping. The design of the active region is crucial to achieve the required high power and electro-optical conversion efficiency, since the temperature significantly affects the performance of the quantum well, [...] Read more.
High-power, broad-area, semiconductor lasers are attractive sources for material processing, aerospace, and laser pumping. The design of the active region is crucial to achieve the required high power and electro-optical conversion efficiency, since the temperature significantly affects the performance of the quantum well, including the internal quantum efficiency and mode gain. In this work, the temperature effects on the active region of a 808 nm high-power semiconductor laser were investigated theoretically and experimentally. The simulations were performed with a Quasi-3D model, which involved complete steady-state semiconductor and carrier confinement efficiency combined with a new mathematical method. The critical aluminum content of the quantum barrier was proposed and the relationship between temperature and various loss sources was disclosed in the temperature range of 213 to 333 K, which provides a reliable reference for the design of epitaxial structures of high-power semiconductor lasers in different operating conditions. Subsequently, the optimized epitaxial structure was determined and used to fabricate standard laser bar chips with a cavity length of 2 mm. The experimental electro-optical conversion efficiency of 71% was demonstrated with a slope efficiency of 1.34 W/A and an injection current of 600 A at the heatsink temperature of 223 K. A record high electro-optical conversion efficiency of 73.5% was reached at the injection current of 400 A, while the carrier confinement efficiency was as high as 98%. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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15 pages, 4181 KiB  
Article
Analysis of Thermal Effects in Kilowatt High Power Diamond Raman Lasers
by Qiaoxia Gong, Mengxin Zhang, Chaonan Lin, Xun Yang, Xihong Fu, Fengying Ma, Yongsheng Hu, Lin Dong and Chongxin Shan
Crystals 2022, 12(12), 1824; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12121824 - 14 Dec 2022
Cited by 3 | Viewed by 2048
Abstract
Chemical vapor deposition (CVD) diamond crystal is considered as an ideal material platform for Raman lasers with both high power and good beam quality due to its excellent Raman and thermal characteristics. With the continuous development of CVD diamond crystal growth technology, diamond [...] Read more.
Chemical vapor deposition (CVD) diamond crystal is considered as an ideal material platform for Raman lasers with both high power and good beam quality due to its excellent Raman and thermal characteristics. With the continuous development of CVD diamond crystal growth technology, diamond Raman lasers (DRLs) have shown significant advantages in achieving wavelength expansion with both high beam quality and high-power operation. However, with the output power of DRLs reaching the kilowatt level, the adverse effect of the thermal impact on the beam quality is progressively worsening. Aiming to enunciate the underlying restrictions of the thermal effects for high-power DRLs (e.g., recently reported 1.2 kW), we here establish a thermal-structural coupling model, based on which the influence of the pump power, cavity structure, and crystal size have been systematically studied. The results show that a symmetrical concentric cavity has less thermal impact on the device than an asymmetrical concentric cavity. Under the ideal heat dissipation condition, the highest temperature rise in the diamond crystal is 23.4 K for an output power of ~2.8 kW. The transient simulation further shows that the heating and cooling process of DRLs is almost unaffected by the pump power, and the times to reach a steady state are only 1.5 ms and 2.5 ms, respectively. In addition, it is also found that increasing the curvature radius of the cavity mirror, the length and width of the crystal, or decreasing the thickness of the crystal is beneficial to alleviating the thermal impact of the device. The findings of this work provide some helpful insights into the design of the cavity structure and heat dissipation system of DRLs, which might facilitate their future development towards a higher power. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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9 pages, 2482 KiB  
Article
Tunable, High-Power, Narrow-Linewidth Diode Laser for Potassium Alkali Metal Vapor Laser Pumping
by Jinliang Han, Jun Zhang, Xiaonan Shan, Yawei Zhang, Hangyu Peng, Li Qin and Lijun Wang
Crystals 2022, 12(11), 1675; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12111675 - 20 Nov 2022
Cited by 2 | Viewed by 1842
Abstract
This work proposes a method of compressing spectral linewidth and tuning the central wavelength of multiple high-power diode laser arrays in an external cavity feedback structure based on one volume Bragg grating (VBG). Through the combination of beam collimation and spatial beam technologies, [...] Read more.
This work proposes a method of compressing spectral linewidth and tuning the central wavelength of multiple high-power diode laser arrays in an external cavity feedback structure based on one volume Bragg grating (VBG). Through the combination of beam collimation and spatial beam technologies, a diode laser source producing 102.1 W at an operating current of 40 A is achieved. This laser source has a central wavelength of 766 nm and a narrow spectral linewidth of 0.164 nm. Moreover, a tuning central wavelength ranging from 776–766.231 nm is realized by precisely controlling the temperature of the VBG, and the locked central wavelength as a function of temperature shifts at the rate of approximately 0.0076 nm/°C. The results further prove that the smile under 1 μm can restrain the self-excitation effect of the emitting laser, which can influence the efficiency of the potassium alkali metal vapor laser pumping. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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12 pages, 4237 KiB  
Article
Long-Distance High-Power Wireless Optical Energy Transmission Based on VECSELs
by Zhuo Zhang, Jianwei Zhang, Yuxiang Gong, Yinli Zhou, Xing Zhang, Chao Chen, Hao Wu, Yongyi Chen, Li Qin, Yongqiang Ning and Lijun Wang
Crystals 2022, 12(10), 1475; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12101475 - 18 Oct 2022
Cited by 2 | Viewed by 1486
Abstract
Wireless charging systems are critical for safely and efficiently recharging mobile electronic devices. Current wireless charging technologies involving inductive coupling, magnetic resonance coupling, and microwave transmission are bulky, require complicated systems, expose users to harmful radiation, and have very short energy transmission distances. [...] Read more.
Wireless charging systems are critical for safely and efficiently recharging mobile electronic devices. Current wireless charging technologies involving inductive coupling, magnetic resonance coupling, and microwave transmission are bulky, require complicated systems, expose users to harmful radiation, and have very short energy transmission distances. Herein, we report on a long-distance optical power transmission system by optimizing the external cavity structure of semiconductor lasers for laser charging applications. An ultra-long stable oscillating laser cavity with a transmission distance of 10 m is designed. The optimal laser cavity design is determined by simulating the structural parameters for stable operation, and an improved laser cavity that produces an output of 2.589 W at a transmission distance of 150 cm is fabricated. The peak power attenuation when the transmission distance increases from 50 to 150 cm is only approximately 6.4%, which proves that this wireless power transfer scheme based on a vertical external cavity surface-emitting laser can be used to realize ultra-long-distance power transmission. The proposed wireless energy transmission scheme based on a VECSEL laser is the first of its kind to report a 1.5 m transmission distance output power that exceeds 2.5 W. Compared with other wireless energy transmission technologies, this simple, compact, and safe long-distance wireless laser energy transmission system is more suitable for indoor charging applications. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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Review

Jump to: Editorial, Research

16 pages, 2016 KiB  
Review
Research on Mid-Infrared External Cavity Quantum Cascade Lasers and Applications
by Yuhang Ma, Keke Ding, Long Wei, Xuan Li, Junce Shi, Zaijin Li, Yi Qu, Lin Li, Zhongliang Qiao, Guojun Liu, Lina Zeng and Dongxin Xu
Crystals 2022, 12(11), 1564; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12111564 - 02 Nov 2022
Cited by 3 | Viewed by 1729
Abstract
In this paper, we review the progress of the development and application of external cavity quantum cascade lasers (ECQCLs). We concentrated on ECQCLs based on the wide tunable range for multi-component detection and applications. ECQCLs in the mid-infrared band have a series of [...] Read more.
In this paper, we review the progress of the development and application of external cavity quantum cascade lasers (ECQCLs). We concentrated on ECQCLs based on the wide tunable range for multi-component detection and applications. ECQCLs in the mid-infrared band have a series of unique spectral properties, which can be widely used in spectroscopy, gas detection, protein detection, medical diagnosis, free space optical communication, and so on, especially wide tuning range, the tuning range up to hundreds of wavenumbers; therefore, ECQCLs show great applications potential in many fields. In this paper, the main external cavity structures of ECQCLs are reviewed and compared, such as the Littrow structure, the Littman structure, and some new structures. Some new structures include the intra-cavity out-coupling structure, multimode interference (MMI) structure, and acousto-optic modulator (AOM) control structure. At the same time, the application research of ECQCLs in gas detection, protein detection, and industry detection are introduced in detail. The results show that the use of diffraction gratings as optical feedback elements can not only achieve wide tuning, but it also has low cost, which is beneficial to reduce the complexity of the laser structure. Therefore, the use of diffraction gratings as optical feedback elements is still the mainstream direction of ECQCLs, and ECQCLs offer a further new option for multi-component detection. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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21 pages, 4414 KiB  
Review
Development of Solution-Processed Perovskite Semiconductors Lasers
by Nan Zhang, Quanxin Na, Qijie Xie and Siqi Jia
Crystals 2022, 12(9), 1274; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12091274 - 08 Sep 2022
Cited by 1 | Viewed by 2471
Abstract
Lead halide perovskite is a new photovoltaic material with excellent material characteristics, such as high optical absorption coefficient, long carrier transmission length, long carrier lifetime and low defect state density. At present, the steady-state photoelectric conversion efficiency of all-perovskite laminated cells is as [...] Read more.
Lead halide perovskite is a new photovoltaic material with excellent material characteristics, such as high optical absorption coefficient, long carrier transmission length, long carrier lifetime and low defect state density. At present, the steady-state photoelectric conversion efficiency of all-perovskite laminated cells is as high as 28.0%, which has surpassed the highest efficiency of monocrystalline silicon cells (26.7%). In addition to its excellent photovoltaic properties, perovskite is also a type of direct bandgap semiconductor with low cost, solubilization, high fluorescence quantum efficiency and tunable radiation wavelength, which brings hope for the realization of electrically pumped low-cost semiconductor lasers. In recent years, a variety of perovskite lasers have emerged, ranging from the type of resonator, the wavelength and pulse width of the pump source, and the preparation process. However, the current research on perovskite lasers is only about the type of resonator, the type of perovskite and the pump wavelength, but the performance of the laser itself and the practical application of perovskite lasers are still in the initial stages. In this review, we summarize the recent developments and progress of solution-processed perovskite semiconductors lasers. We discuss the merit of solution-processed perovskite semiconductors as lasing gain materials and summarized the characteristics of a variety of perovskite lasers. In addition, in view of the issues of poor stability and high current density required to achieve electrically pumped lasers in perovskite lasers, the development trend of perovskite lasers in the future is prospected. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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17 pages, 22269 KiB  
Review
Optical Crystals for 1.3 μm All-Solid-State Passively Q-Switched Laser
by Yanxin Shen, Xinpeng Fu, Cong Yao, Wenyuan Li, Yubin Wang, Xinrui Zhao, Xihong Fu and Yongqiang Ning
Crystals 2022, 12(8), 1060; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12081060 - 29 Jul 2022
Cited by 7 | Viewed by 1865
Abstract
In recent years, optical crystals for 1.3 μm all-solid-state passively Q-switched lasers have been widely studied due to their eye-safe band, atmospheric transmission characteristics, compactness, and low cost. They are widely used in the fields of high-precision laser radar, biomedical applications, and fine [...] Read more.
In recent years, optical crystals for 1.3 μm all-solid-state passively Q-switched lasers have been widely studied due to their eye-safe band, atmospheric transmission characteristics, compactness, and low cost. They are widely used in the fields of high-precision laser radar, biomedical applications, and fine processing. In this review, we focus on three types of optical crystals used as the 1.3 μm laser gain media: neodymium-doped vanadate (Nd:YVO4, Nd:GdVO4, Nd:LuVO4, neodymium-doped aluminum-containing garnet (Nd:YAG, Nd:LuAG), and neodymium-doped gallium-containing garnet (Nd:GGG, Nd:GAGG, Nd:LGGG). In addition, other crystals such as Nd:KGW, Nd:YAP, Nd:YLF, and Nd:LLF are also discussed. First, we introduce the properties of the abovementioned 1.3 μm laser crystals. Then, the recent advances in domestic and foreign research on these optical crystals are summarized. Finally, the future challenges and development trend of 1.3 μm laser crystals are proposed. We believe this review will provide a comprehensive understanding of the optical crystals for 1.3 μm all-solid-state passively Q-switched lasers. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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28 pages, 9165 KiB  
Review
Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
by Bin Wang, Yugang Zeng, Yue Song, Ye Wang, Lei Liang, Li Qin, Jianwei Zhang, Peng Jia, Yuxin Lei, Cheng Qiu, Yongqiang Ning and Lijun Wang
Crystals 2022, 12(7), 1011; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12071011 - 21 Jul 2022
Cited by 5 | Viewed by 3342
Abstract
Selective area epitaxy (SAE) using metal–organic chemical vapor deposition (MOCVD) is a crucial fabrication technique for lasers and photonic integrated circuits (PICs). A low-cost, reproducible, and simple process for the mass production of semiconductor lasers with specific structures was realized by means of [...] Read more.
Selective area epitaxy (SAE) using metal–organic chemical vapor deposition (MOCVD) is a crucial fabrication technique for lasers and photonic integrated circuits (PICs). A low-cost, reproducible, and simple process for the mass production of semiconductor lasers with specific structures was realized by means of SAE. This paper presents a review of the applications of SAE in semiconductor lasers. Growth rate enhancement and composition variation, which are two unique characteristics of SAE, are attributed to a mask. The design of the mask geometry enables the engineering of a bandgap to achieve lasing wavelength tuning. SAE allows for the reproducible and economical fabrication of buried heterojunction lasers, quantum dot lasers, and heteroepitaxial III–V compound lasers on Si. Moreover, it enables the fabrication of compact photonic integrated devices, including electro-absorption modulated lasers and multi-wavelength array lasers. Results show that SAE is an economical and reproducible method to fabricate lasers with desired structures. The goals for SAE applications in the future are to improve the performance of lasers and PICs, including reducing the defects of the grown material introduced by the SAE mask and achieving precise control of the thickness and composition. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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21 pages, 1685 KiB  
Review
Research Progress of Monolithic Integrated DFB Laser Arrays for Optical Communication
by Shen Niu, Yue Song, Ligong Zhang, Yongyi Chen, Lei Liang, Ye Wang, Li Qin, Peng Jia, Cheng Qiu, Yuxin Lei, Yubing Wang, Yongqiang Ning and Lijun Wang
Crystals 2022, 12(7), 1006; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12071006 - 21 Jul 2022
Cited by 6 | Viewed by 2671
Abstract
Photonic integrated circuits (PICs) play a leading role in modern information and communications technology. Among the core devices in PICs is the distributed feedback (DFB) multi-wavelength semiconductor laser array. Multi-wavelength semiconductor laser arrays can be integrated on a single chip and have the [...] Read more.
Photonic integrated circuits (PICs) play a leading role in modern information and communications technology. Among the core devices in PICs is the distributed feedback (DFB) multi-wavelength semiconductor laser array. Multi-wavelength semiconductor laser arrays can be integrated on a single chip and have the advantages of high stability, good single-mode performance, and narrow line width. The wavelength tuning range has been expanded through the design of the DFB laser array, which is an ideal light source for wavelength-division multiplexing systems. The preparation of DFB laser arrays with a large number of channels, ease of mass production, and accurate emission wavelengths has become an important field of research. The connection methods of lasers in DFB laser arrays are introduced systematically and the current methods of manufacturing multi-wavelength DFB laser arrays covering the perspective of technical principles, technical advantages and disadvantages, main research progress, and research status are summarized. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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12 pages, 1599 KiB  
Review
Research on Narrow Linewidth External Cavity Semiconductor Lasers
by Keke Ding, Yuhang Ma, Long Wei, Xuan Li, Junce Shi, Zaijin Li, Yi Qu, Lin Li, Zhongliang Qiao, Guojun Liu and Lina Zeng
Crystals 2022, 12(7), 956; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12070956 - 08 Jul 2022
Cited by 7 | Viewed by 3307
Abstract
Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have [...] Read more.
Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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26 pages, 4436 KiB  
Review
Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers
by Yue Song, Zhiyong Lv, Jiaming Bai, Shen Niu, Zibo Wu, Li Qin, Yongyi Chen, Lei Liang, Yuxin Lei, Peng Jia, Xiaonan Shan and Lijun Wang
Crystals 2022, 12(6), 765; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12060765 - 26 May 2022
Cited by 7 | Viewed by 5512
Abstract
High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, [...] Read more.
High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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18 pages, 5884 KiB  
Review
Research on Silicon-Substrate-Integrated Widely Tunable, Narrow Linewidth External Cavity Lasers
by Xuan Li, Junce Shi, Long Wei, Keke Ding, Yuhang Ma, Zaijin Li, Lin Li, Yi Qu, Zhongliang Qiao, Guojun Liu and Lina Zeng
Crystals 2022, 12(5), 674; https://0-doi-org.brum.beds.ac.uk/10.3390/cryst12050674 - 08 May 2022
Cited by 3 | Viewed by 3456
Abstract
Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and [...] Read more.
Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output. Full article
(This article belongs to the Special Issue Frontiers of Semiconductor Lasers)
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