Multilevel Power Converters Based on Wide-Bandgap Semiconductor Devices: Technologies, Modulation, Control and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 2411

Special Issue Editors


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Guest Editor
Department of Engineering, University of Palermo, 90133 Palermo, Italy
Interests: vehicle; power electronics; electromagnetic field; numerical analysis; lightning; high voltage
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Engineering, University of Palermo, Viale delle Scienze, Parco d’Orleans, 90128 Palermo, Italy
Interests: multilevel converters; inverter; modulation techniques; control strategies for grid-connected and electric-drive applications

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Guest Editor
Department of Engineering, University of Palermo, Viale delle Scienze, Parco d’Orleans, 90128 Palermo, Italy
Interests: power converters; electric drives; inductive power transfer; energy harvesting; renewable energy; hybrid energy storage systems; wide-bandgap devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The ever-increasing development of renewable energy sources (PV, wind, fuel cell, etc.) requires innovative power converter solutions to increase the efficiency of conversion. Multilevel power converters (MPC) have attracted increasing attention from academia and industry thanks to the advantages they bring, such as low harmonic content on the output voltages, low voltage stress, reduction of the EMI problems, etc. Nevertheless, these technologies require complex topology structures and hard control strategies. Moreover, single-stage converters based on an impedance source (Z-source) allow increasing the efficiency with respect to traditional solutions. In this context, impedance source multilevel converters inherit the advantages of Z-source converters (i.e., high-voltage boost capability, high reliability) and MPC (i.e., low harmonic content, low-voltage stress).

On the other hand, wide-bandgap (WBG) semiconductor devices, such as silicon carbide (SiC) and gallium nitride (GaN), provide significant benefits in comparison with the conventional devices based on silicon (Si) as far as power converter applications are concerned. It is well known that although SiC-based switching devices generally offer higher voltage ratings with respect to the GaN-based devices, they can lead to higher power losses. Due to the several opportunities provided by WBG in terms of converter performance improvement, these emerging technologies of switching power semiconductor devices can bring significant advantages to MPC, such as higher flexibility and wider ranges of power levels.

In order to promote further research and development of MPC based on WBG devices, the aim of this Special Issue is to provide a common environment for discussion, presentation of innovative solutions, and exchange of ideas among expert researchers in this field. The contributions can also include refinements on existing techniques, comparison between different solutions and economic analysis. Moreover, the experimental tests are necessary to validate the proposed solutions.

Topics of interest include, but are not limited to the following:

  • Innovative topologies of MPC
  • Innovative modulation techniques for MPC
  • New control strategies for MPC (sliding mode, predictive control, sensorless, fuzzy logic, etc.);
  • Emerging technologies of switching power devices, such as WBG, applicable to MPC
  • Reliability analysis
  • Efficiency analysis
  • Review and last improvements on MPC
  • Applications of MPC in renewable energy and grid-connected, such as in the following:
    • PV systems
    • Fuel cell systems
    • Wind turbine systems
    • Hybrid Energy Storage Systems
  • Applications of MPC in automotive, such as the following:
    • Battery management systems
    • Vehicle-to–Grid

Dr. Fabio Viola
Dr. Giuseppe Schettino
Dr. Filippo Pellitteri
Guest Editors

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Keywords

  • Total harmonic distortion (THD)
  • field-programmable gate array
  • modulation techniques
  • cascaded h-bridge multilevel inverter (CHBMI)
  • wide-bandgap
  • SiC
  • GaN
  • renewable energy

Published Papers (1 paper)

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Research

9 pages, 1241 KiB  
Article
First Principle Investigation of Electronic, Transport, and Bulk Properties of Zinc-Blende Magnesium Sulfide
by Uttam Bhandari, Blaise Awola Ayirizia, Yuriy Malozovsky, Lashounda Franklin and Diola Bagayoko
Electronics 2020, 9(11), 1791; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics9111791 - 29 Oct 2020
Cited by 7 | Viewed by 1944
Abstract
We have studied electronic, structural, and transport properties of zinc-blende magnesium sulfide (zb-MgS). We employed a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) method. Our computational method is able to reach the ground state of a material, [...] Read more.
We have studied electronic, structural, and transport properties of zinc-blende magnesium sulfide (zb-MgS). We employed a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) method. Our computational method is able to reach the ground state of a material, as dictated by the second theorem of density functional theory (DFT). Consequently, our findings have the physical content of DFT and agree with available, corresponding experimental ones. The calculated band gap of zb-MgS, a direct gap equal to 4.43 eV, obtained at the experimental lattice constant of 5.620 Å, completely agrees with the experimental band gap of 4.45 ± 0.2 eV. We also report total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated pDOS also agree with the experiment for the description of the states at the top and the bottom of the valence and conduction bands, respectively. Full article
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