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Electronics
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Advances in Wide Bandgap Semiconductor for Power Device Applications
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Advances in Wide Bandgap Semiconductor for Power Device Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (15 August 2021) | Viewed by 2788

Special Issue Editor

Prof. Dr. Bongmook Lee

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, North Carolina State University, 27607 Raleigh, NC, USA
Interests: thin film deposition; semiconductor device physics; nanofabrication; thin film technology; nanoelectronics; semiconductor physics; GaN; MOS

Special Issue Information

Dear Colleagues,

Wide-bandgap semiconductors are considered as materials for the next generation of power devices. SiC-based switches and diodes are commercially available and have led to a significant improvement of power efficiency. Gallium nitride is another promising wide-bandgap semiconductor that can be used for high-frequency and high-power amplifier applications. Although the bulk properties of SiC and GaN substrates are much better than those of Si substrates, the current SiC and GaN power devices are not utilizing their full potential because of performance limitations originated from interface and gate stacks. SiC devices are suffering from mobility degradation due to large interface–near interface traps. GaN devices are experiencing dynamic on-resistance issues associated with charge trapping at the GaN–dielectric interface. Ultrawide-bandgap semiconductors including AlN, Ga2O3, and diamond substrates promise even better performance, but the problems linked to gate stack still need to be researched.

This Special Issue hopes to provide a timely overview of the recent progress in dielectrics on wide-bandgap semiconductors and to highlight any remaining issues that need to be addressed in the future. Authors are invited to submit original research articles as well as review articles to this Special Issue. The topics of interest are the following: 

  • Gate oxides on SiC
  • High-mobility SiC MOSFET with new dielectrics
  • Gate oxides on GaN
  • Novel passivation approaches on GaN
  • Reliability and stability of oxides on SiC and GaN
  • Dielectrics on AlN, Ga2O3, or diamond semiconductor
  • Atomic layer depostion
  • Deposited dielectrics on wide-bandgap semiconductors

Prof. Dr. Bongmook Lee
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Gate oxides on SiC
  • High-mobility SiC MOSFET with new dielectrics
  • Gate oxides on GaN
  • Novel passivation approaches on GaN
  • Reliability and stability of oxides on SiC and GaN
  • Dielectrics on AlN, Ga2O3, or diamond semiconductor
  • Atomic layer depostion
  • Deposited dielectrics on wide-bandgap semiconductors

Published Papers (1 paper)

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Research

12 pages, 12132 KiB  
Article
3.3-kV 4H-SiC Split-Gate DMOSFET with Floating p+ Polysilicon for High-Frequency Applications
by Kyuhyun Cha, Jongwoon Yoon and Kwangsoo Kim
Electronics 2021, 10(6), 659; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics10060659 - 11 Mar 2021
Cited by 1 | Viewed by 2346
Abstract
A split-gate metal–oxide–semiconductor field-effect transistor (SG-DMOSFET) is a well-known structure used for reducing the gate–drain capacitance (CGD) to improve switching characteristics. However, SG-DMOSFETs have problems such as the degradation of static characteristics and a high gate-oxide electric field. To solve these [...] Read more.
A split-gate metal–oxide–semiconductor field-effect transistor (SG-DMOSFET) is a well-known structure used for reducing the gate–drain capacitance (CGD) to improve switching characteristics. However, SG-DMOSFETs have problems such as the degradation of static characteristics and a high gate-oxide electric field. To solve these problems, we developed a SG-DMOSFET with floating p+ polysilicon (FPS-DMOSFET) and compared it with a conventional planar DMOSFET (C-DMOSFET) and a SG-DMOSFET through Technology Computer-Aided Design (TCAD) simulations. In the FPS-DMOSFET, floating p+ polysilicon (FPS) is inserted between the active gates to disperse the high drain voltage in the off state and form an accumulation layer over the entire junction field effect transistor (JFET) region, similar to a C-DMOSFET, in the on state. Therefore, the FPS-DMOSFET can minimize the degradation of static characteristics such as the breakdown voltage (BV) and specific on resistance (RON,SP) in the split-gate structure. Consequently, the FPS-DMOSFET can shorten the active gate length and achieve a gate-to-drain capacitance (CGD) that is less than those of the C-DMOSFET and SG-DMOSFET by 48% and 41%, respectively. Moreover, the high-frequency figure of merit (HF-FOM = RON,SP × CGD) of the FPS-DMOSFET is lower than those of the C-DMOSFET and SG-DMOSFET by 61% and 49%, respectively. In addition, the FPS-DMOSFET shows an EMOX of 2.1 MV/cm, which guarantees a gate oxide reliability limit of 3 MV/cm. Therefore, the proposed FPS-DMOSFET is the most appropriate device to be used in high-voltage and high-frequency electronic applications. Full article
(This article belongs to the Special Issue Advances in Wide Bandgap Semiconductor for Power Device Applications)
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