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Heterostructures for High-Performance Optoelectronic Devices

A special issue of Energies (ISSN 1996-1073). This special issue belongs to the section "D1: Advanced Energy Materials".

Deadline for manuscript submissions: closed (22 January 2022) | Viewed by 2321

Special Issue Editor


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Guest Editor
Department of Materials Science and Engineering, University of Illinois, Urbana-Champaign, IL 61801, USA
Interests: photovoltaics; photonics; semiconductor; organic/inorganic interfaces; organic and molecular ferroelectrics; energy harvesting

Special Issue Information

Dear Colleagues,

Heterostructure, which is defined as a combination of two or more different semiconductors, makes it possible to enhance transport properties and reduce defect states, leading to the emergence of synergetic material combinations with unsurpassed performances. Specifically, heterostructure is suitable for optoelectronic devices, including solar cells, LEDs, laser diodes, and photodetectors. From III–V compound semiconductors and Si/organic-to-halide perovskite, there is an increasing interest in the modification of interfaces between them and the change of composition for device performance and stability. The purpose of this Special Issue is to address the advances in research related to the heterostructures for the optoelectronic devices and engineering interfaces for enhancing the performances. We invite original manuscripts presenting recent advances in this area with special reference to the following topics:

  • The interfaces of III–V compound semiconductors for tuning the optical and electrical properties by changing the composition of materials;
  • Modification of Si surfaces for efficient organic/Si photovoltaics;
  • Physical chemistry or material chemistry of interlayer for high-performance organic/Si photovoltaics;
  • A-site or B-site engineering for stable interfaces of halide perovskite (ABX3) solar cells;
  • Ligand-engineering in mixed halide for stable and efficient perovskite optoelectronic devices;
  • The new architectures of heterostructures for advanced optoelectronic devices.

Dr. Sung Bum Kang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Energies is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • heterostructure
  • photovoltaics
  • optoelectronic devices
  • III–V compound semiconductors
  • Si-organic hetero-interfaces
  • halide perovskite

Published Papers (1 paper)

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Research

10 pages, 2131 KiB  
Article
Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer
by Sung Bum Kang, Rahul Sharma, Minhyeok Jo, Su In Kim, Jeongwoo Hwang, Sang Hyuk Won, Jae Cheol Shin and Kyoung Jin Choi
Energies 2022, 15(5), 1772; https://0-doi-org.brum.beds.ac.uk/10.3390/en15051772 - 28 Feb 2022
Cited by 4 | Viewed by 1997
Abstract
The growth of high-quality compound semiconductor materials on silicon substrates has long been studied to overcome the high price of compound semiconductor substrates. In this study, we successfully fabricated nanowire solar cells by utilizing high-quality hetero p-n junctions formed by growing n-type III-V [...] Read more.
The growth of high-quality compound semiconductor materials on silicon substrates has long been studied to overcome the high price of compound semiconductor substrates. In this study, we successfully fabricated nanowire solar cells by utilizing high-quality hetero p-n junctions formed by growing n-type III-V nanowires on p-silicon substrates. The n-InAs0.75P0.25 nanowire array was grown by the Volmer–Weber mechanism, a three-dimensional island growth mode arising from a lattice mismatch between III-V and silicon. For the surface passivation of n-InAs0.75P0.25 core nanowires, a wide bandgap InP shell was formed. The nanowire solar cell was fabricated by benzocyclobutene (BCB) filling, exposure of nanowire tips by reactive-ion etching, electron-beam deposition of ITO window layer, and finally metal grid electrode process. In particular, the ITO window layer plays a key role in reducing light reflection as well as electrically connecting nanowires that are electrically separated from each other. The deposition angle was adjusted for conformal coating of ITO on the nanowire surface, and as a result, the lowest light reflectance and excellent electrical connectivity between the nanowires were confirmed at an oblique deposition angle of 40°. The solar cell based on the heterojunction between the n-InAs0.75P0.25/InP core-shell nanowire and p-Si exhibited a very high photoelectric conversion efficiency of 9.19% with a current density of 27.10 mA/cm2, an open-circuit voltage of 484 mV, and a fill factor of 70.1%. Full article
(This article belongs to the Special Issue Heterostructures for High-Performance Optoelectronic Devices)
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