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Advanced/Alternative Transparent Conducting Oxides (Second Volume)
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Advanced/Alternative Transparent Conducting Oxides (Second Volume)

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 August 2022) | Viewed by 9161

Special Issue Editor

Prof. Dr. Junyeob Yeo

E-Mail Website
Guest Editor
Department of Physics, Kyungpook National University, 80 Daehak-ro, Bukgu, Daegu 41566, Republic of Korea
Interests: optics; laser processing; nano-processing; flexible/wearable electronics; transparent display; energy devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Transparent conducting oxides (TCO) are indispensable materials for opto-electronics, and high tranparency together with high electrical conductivity are the key parameters for transparent conductors. Since TCO materials are usually deposited on the glass substrate as a conductive thin film through a CVD or evaporator process, transparent conductive glass is the usual form for transparent conductors in conventional opto-eletronics. Among the various TCO materials, induim-doped tin oxide (ITO) and fluorine-doped tin oxide (FTO) are the most widely used material in both industry and research. These materials have been successfully applied to various large-area opto-electronics such as touch screen panels, LCD/OLED displays, smart windows, and solar cells to date.

Nowadays, TCO materials are more important for industry due to the increasing demands of flexible and wearable electronics. However, ITO and FTO are not suitable for flexible and wearable eletronics due to the several intrinsic drawbacks, such as its brittleness, which causes cracks upon bending. In addition, indium is a rare earth material, resulting in a relatively high material cost for ITO production. Therefore, advanced or alternative materials (eg. metal nanowire or CNT) for TCO are required to develop and investigate next generation smart electronics such as flexible and wearable electronics.

This Special Issue is mainly focused on alternative or advanced transparent conducting oxides, as well as materials synthesis, th fabrication process, and applications of TCO. Topics include, but are not limited to:

  • Searching and investigating various types of advanced/alternative transparent conducting oxides
    - Doped oxide (indium, fluorine, zinc, etc.)-based transparent conductive oxides
    - Advanced TCO of 1D materials: Carbon nanotubes (CNT), metal (Au, Ag, Cu, Ni) nanowire, other 1D materials
    - Advanced TCO of 2D materials: graphene, graphene/metal nanowire hybrids, other 2D materials
  • Research into the synthesis, process, and applications of advanced/alternative transparent conducting oxides
  • New synthesis methods for advanced/alternative transparent conducting oxides
  • New process and fabrication methods for advanced/alternative transparent conducting oxides
  • New applications using advanced/alternative transparent conducting oxides

Prof. Dr. Junyeob Yeo
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • transparent conducting oxides
  • ITO
  • FTO
  • metal nanowire
  • CNT
  • graphene
  • flexible electronics
  • wearable electronics

Published Papers (4 papers)

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Research

11 pages, 4155 KiB  
Article
Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes
by Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim and Jaewon Jang
Materials 2022, 15(19), 6859; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15196859 - 02 Oct 2022
Cited by 6 | Viewed by 1872
Abstract
In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term stability of the RRAM [...] Read more.
In this study, we fabricated sol-gel-processed Y2O3-based resistive random-access memory (RRAM) devices. The fabricated Y2O3 RRAM devices exhibited conventional bipolar RRAM device characteristics and did not require the forming process. The long-term stability of the RRAM devices was investigated. The Y2O3 RRAM devices with a 20 nm thick Ag top electrode showed an increase in the low resistance state (LRS) and high resistance state (HRS) and a decrease in the HRS/LRS ratio after 30 days owing to oxidation and corrosion of the Ag electrodes. However, Y2O3 RRAM devices with inert Au-passivated Ag electrodes showed a constant RRAM device performance after 30 days. The 150 nm-thick Au passivation layer successfully suppressed the oxidation and corrosion of the Ag electrode by minimizing the chance of contact between water or oxygen molecules and Ag electrodes. The Au/Ag/Y2O3/ITO RRAM devices exhibited more than 300 switching cycles with a decent resistive window (>103). They maintained constant LRS and HRS resistances for up to 104 s, without significant degradation of nonvolatile memory properties for 30 days while stored in air. Full article
(This article belongs to the Special Issue Advanced/Alternative Transparent Conducting Oxides (Second Volume))
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10 pages, 7888 KiB  
Article
Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field
by Do-Won Kim, Hyeon-Joong Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim and Jaewon Jang
Materials 2022, 15(5), 1943; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15051943 - 05 Mar 2022
Cited by 10 | Viewed by 2170
Abstract
Sol–gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor [...] Read more.
Sol–gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface tension was added to realize the local electric field area. During drying and high-temperature post-annealing processes, the large convective flow enhanced the surface elevation, and the increased –OH groups accelerated the hydrolysis reaction and aggregation. These phenomena afforded Y2O3 films with an uneven surface morphology and an increased surface roughness. The increased roughness of the Y2O3 films attributable to the triethylamine stabilizer enhanced the local electrical field, improved device reliability, and achieved successful repetition of the switching properties over an extended period. Full article
(This article belongs to the Special Issue Advanced/Alternative Transparent Conducting Oxides (Second Volume))
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11 pages, 14380 KiB  
Article
Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process
by Hyeon-Joong Kim, Do-Won Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim and Jaewon Jang
Materials 2022, 15(5), 1899; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15051899 - 03 Mar 2022
Cited by 9 | Viewed by 2111
Abstract
Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2 [...] Read more.
Flexible indium tin oxide (ITO)/Y2O3/Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y2O3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y2O3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >104, with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 104 s and up to 102 programming/erasing operation cycles. Full article
(This article belongs to the Special Issue Advanced/Alternative Transparent Conducting Oxides (Second Volume))
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13 pages, 4090 KiB  
Article
Electrodeposition of the MnO2 on the Ag/Au Core–Shell Nanowire and Its Application to the Flexible Supercapacitor
by Wonbin Seo, Dongwoo Kim, Shihyeong Kim and Habeom Lee
Materials 2021, 14(14), 3934; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14143934 - 14 Jul 2021
Cited by 5 | Viewed by 2354
Abstract
Supercapacitors have received considerable attention as energy storage devices owing to their high power density, fast charge/discharge rate, and long cyclic life. Especially with an increasing demand for flexible and wearable devices, research on flexible supercapacitors has surged in recent years. The silver [...] Read more.
Supercapacitors have received considerable attention as energy storage devices owing to their high power density, fast charge/discharge rate, and long cyclic life. Especially with an increasing demand for flexible and wearable devices, research on flexible supercapacitors has surged in recent years. The silver nanowire (Ag NW) network has been used as a flexible electrode owing to its excellent mechanical and electrical properties; however, its use as an electrode for flexible supercapacitors has been limited due to insufficient electrochemical stability. In this study, we proposed a method to resolve this issue. We employed a solution process that enabled the coating of the surface of Ag NW by a thin Au shell of ≈ 5 nm thickness, which significantly improved the electrochemical stability of the Ag NW network electrodes. Furthermore, we confirmed for the first time that MnO2, which is one of the most widely used capacitive materials, can be directly electroplated on the AACS NW network electrode. Finally, we fabricated a high-performance and flexible solid-state supercapacitor using the suggested Ag/Au/MnO2 core–shell NW network electrodes. Full article
(This article belongs to the Special Issue Advanced/Alternative Transparent Conducting Oxides (Second Volume))
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