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Functional Nanomaterials and Their Ferroelectric, Magnetic or Optical Behavior

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (20 October 2022) | Viewed by 7801

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Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan
Interests: magnetic materials; semiconductor process; magnetoresistance random access memory (MRAM); surface sciences; analysis of materials; nano (optical) electronic materials and advanced semiconductor technology
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Guest Editor
Department of Electronic Engineering, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan
Interests: nano (optical) electronic materials and advanced component applications; semiconductor and optoelectronic component design and testing technology; biomedical sensors and biomedical electronic engineering; smart networking system design and implementation
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Researchers and scholars are invited to actively submit their papers to this Special Issue on thin film materials, such as the field of magnetics, optoelectronics, ferroelectrics, etc. Contributions can focus on fields including magnetic materials, magnetic recording media, tunneling magnetoresistance, magnetostriction, magnetic wall, hard magnet, soft magnetic, nano-optical materials, and piezoelectric materials.

The content of the submitted article can include important film process conditions and methods of the material, as well as important theoretical and experimental results. In addition, it can also describe the application of magnetic ferroelectric and optical materials in related important fields. The article contains a variety of important new discoveries about magnetic, optic, and ferroelectric materials for discussion and verification to ensure the completeness of the article. The submitted manuscripts are divided into the categories as listed below:

(A) Magnetic materials and recording media;

(B) Functional oxides, nitrides, and inorganic materials;

(C) Multilayer electronic ceramic components;

(D) Integrated circuit and packaging materials;

(E) Inorganic and organic optoelectronic materials and displays;

(F) Energy materials;

(G) Nanomaterials;

(H) Nanoelectronics and optoelectronics;

(I) Low-dimensional materials;

(J) Applied physics and materials;

(K) Calculation material;

(L) Other materials.

Prof. Dr. Yuan-Tsung Chen
Dr. Shih-Hung Lin
Guest Editors

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • magnetic materials
  • magnetic recording media
  • tunneling magnetoresistance
  • magnetostriction
  • magnetic wall
  • hard magnet
  • soft magnetic
  • nano-optical materials
  • piezoelectric materials

Published Papers (6 papers)

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Research

17 pages, 5305 KiB  
Article
The Influence of Oxidation on the Magnetic, Electrical, and Mechanical Properties of Co40Fe40Yb20 Films
by Wen-Jen Liu, Yung-Huang Chang, Chia-Chin Chiang, Yuan-Tsung Chen, Ying-Hsuan Chen, Hui-Jun You, Te-Ho Wu, Shih-Hung Lin and Po-Wei Chi
Materials 2022, 15(23), 8675; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15238675 - 05 Dec 2022
Viewed by 1079
Abstract
A typical body-centered cubic (BCC) CoFe(110) peak was discovered at approximately 2θ = 44.7°. At 2θ = 46°, 46.3°, 47.7°, 55.4°, 54.6°, and 56.4°, the Yb2O3 and Co2O3 oxide peaks were visible in all samples. However, with [...] Read more.
A typical body-centered cubic (BCC) CoFe(110) peak was discovered at approximately 2θ = 44.7°. At 2θ = 46°, 46.3°, 47.7°, 55.4°, 54.6°, and 56.4°, the Yb2O3 and Co2O3 oxide peaks were visible in all samples. However, with a heat treatment temperature of 300 °C, there was no typical peak of CoFe(110). Electrical characteristics demonstrated that resistivity and sheet resistance reduced dramatically as film thickness and annealing temperatures increased. At various heat treatments, the maximum hardness was 10 nm. The average hardness decreased as the thickness increased, and the hardness trend decreased slightly as the annealing temperature was higher. The highest low-frequency alternative-current magnetic susceptibility (χac) value was discovered after being annealed at 200 °C with 50 nm, and the optimal resonance frequency (fres) was discovered to be within the low-frequency range, indicating that the Co40Fe40Yb20 film can be used in low-frequency applications. The maximum saturation magnetization (Ms) was annealed at 200 °C for 50 nm. Thermal disturbance caused the Ms to decrease as the temperature reached to 300 °C. The results show that when the oxidation influence of as-deposited and thinner films is stronger than annealing treatments and thicker thickness, the magnetic and electrical properties can be enhanced by the weakening peak of the oxide, which can also reduce interference. Full article
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16 pages, 3070 KiB  
Article
Effect of Annealing and Thickness of Co40Fe40Yb20 Thin Films on Various Physical Properties on a Glass Substrate
by Wen-Jen Liu, Yung-Huang Chang, Chia-Chin Chiang, Chi-Lon Fern, Yuan-Tsung Chen, Ying-Hsuan Chen, Hao-Wen Liao, Te-Ho Wu, Shih-Hung Lin, Ko-Wei Lin and Po-Wei Chi
Materials 2022, 15(23), 8509; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15238509 - 29 Nov 2022
Cited by 3 | Viewed by 1266
Abstract
The aim of this work is to investigate the effect of annealing and thickness on various physical properties in Co40Fe40Yb20 thin films. X-ray diffraction (XRD) was used to determine the amorphous structure of Co40Fe40Yb [...] Read more.
The aim of this work is to investigate the effect of annealing and thickness on various physical properties in Co40Fe40Yb20 thin films. X-ray diffraction (XRD) was used to determine the amorphous structure of Co40Fe40Yb20 films. The maximum surface energy of 40 nm thin films at 300 °C is 34.54 mJ/mm2. The transmittance and resistivity decreased significantly as annealing temperatures and thickness increased. At all conditions, the 10 nm film had the highest hardness. The average hardness decreased as thickness increased, as predicted by the Hall–Petch effect. The highest low-frequency alternative-current magnetic susceptibility (χac) value was discovered when the film was annealed at 200 °C with 50 nm, and the optimal resonance frequency (ƒres) was in the low frequency range, indicating that the film has good applicability in the low frequency range. At annealed 200 °C and 50 nm, the maximum saturation magnetization (Ms) was discovered. Thermal disturbance caused the Ms to decrease when the temperature was raised to 300 °C. The optimum process conditions determined in this study are 200 °C and 50 nm, with the highest Ms, χac, strong adhesion, and low resistivity, which are suitable for magnetic applications, based on magnetic properties and surface energy. Full article
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12 pages, 3487 KiB  
Article
Effects of Annealing and Thickness of Co60Fe20Yb20 Nanofilms on Their Structure, Magnetic Properties, Electrical Efficiency, and Nanomechanical Characteristics
by Wen-Jen Liu, Yung-Huang Chang, Yuan-Tsung Chen, Po-Chun Chiu, Jian-Cheng Guo, Shih-Hung Lin and Po-Wei Chi
Materials 2022, 15(15), 5184; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15155184 - 26 Jul 2022
Cited by 1 | Viewed by 933
Abstract
X-ray diffraction (XRD) analysis showed that metal oxide peaks appear at 2θ = 47.7°, 54.5°, and 56.3°, corresponding to Yb2O3 (440), Co2O3 (422), and Co2O3 (511). It was found that oxide formation plays an [...] Read more.
X-ray diffraction (XRD) analysis showed that metal oxide peaks appear at 2θ = 47.7°, 54.5°, and 56.3°, corresponding to Yb2O3 (440), Co2O3 (422), and Co2O3 (511). It was found that oxide formation plays an important role in magnetic, electrical, and surface energy. For magnetic and electrical measurements, the highest alternating current magnetic susceptibility (χac) and the lowest resistivity (×10−2 Ω·cm) were 0.213 and 0.42, respectively, and at 50 nm, it annealed at 300 °C due to weak oxide formation. For mechanical measurement, the highest value of hardness was 15.93 GPa at 200 °C in a 50 nm thick film. When the thickness increased from 10 to 50 nm, the hardness and Young’s modulus of the Co60Fe20Yb20 film also showed a saturation trend. After annealing at 300 °C, Co60Fe20Yb20 films of 40 nm thickness showed the highest surface energy. Higher surface energy indicated stronger adhesion, allowing for the formation of multilayer thin films. The optimal condition was found to be 50 nm with annealing at 300 °C due to high χac, strong adhesion, high nano-mechanical properties, and low resistivity. Full article
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14 pages, 5946 KiB  
Article
High-Efficiency Ultrathin Si-Based Solar Cells by Cascading Dilute-Nitride GaNAsP
by Yen-Ju Lin, David Jui-Yang Feng and Tzy-Rong Lin
Materials 2021, 14(23), 7415; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14237415 - 03 Dec 2021
Cited by 1 | Viewed by 1137
Abstract
Thin-film solar cells are currently an important research subject. In this study, a lattice-matched GaNAsP/Si tandem cell was designed. We adopted the drift-diffusion model to analyze the power conversion efficiency (PCE) of the solar cell. To find the maximum solar cell PCE, the [...] Read more.
Thin-film solar cells are currently an important research subject. In this study, a lattice-matched GaNAsP/Si tandem cell was designed. We adopted the drift-diffusion model to analyze the power conversion efficiency (PCE) of the solar cell. To find the maximum solar cell PCE, the recombination terms and the interlayer between subcells was omitted. For an optimal tandem cell PCE, this study analyzed the mole fraction combinations of GaNAsP and the thickness combinations between the GaNAsP and the Si subcells of the tandem cell. Our results showed the superiority of the tandem cell over the Si cell. The 4.5 μm tandem cell had a 12.5% PCE, the same as that of the 10.7 μm Si cell. The 11.5 μm tandem cell had 20.2% PCE, while the 11.5 μm Si cell processed 12.7% PCE. We also analyzed the Si subcell thickness ratio of sub-12 μm tandem cells for maximum PCE. The tandem cell with a thickness between 40% to 70% of a Si cell would have a max PCE. The ratio depended on the tandem cell thickness. We conclude that the lattice-matched GaNAsP/Si tandem cell has potential for ultrathin thin Si-based solar cell applications. Full article
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11 pages, 3717 KiB  
Article
Annealing Effect on the Characteristics of Co40Fe40W10B10 Thin Films on Si(100) Substrate
by Wen-Jen Liu, Yung-Huang Chang, Yuan-Tsung Chen, Chun-Yu Chang, Jian-Xin Lai, Shih-Hung Lin, Te-Ho Wu and Po-Wei Chi
Materials 2021, 14(20), 6017; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14206017 - 13 Oct 2021
Viewed by 1556
Abstract
This research explores the behavior of Co40Fe40W10B10 when it is sputtered onto Si(100) substrates with a thickness (tf) ranging from 10 nm to 100 nm, and then altered by an annealing process at temperatures [...] Read more.
This research explores the behavior of Co40Fe40W10B10 when it is sputtered onto Si(100) substrates with a thickness (tf) ranging from 10 nm to 100 nm, and then altered by an annealing process at temperatures of 200 °C, 250 °C, 300 °C, and 350 °C, respectively. The crystal structure and grain size of Co40Fe40W10B10 films with different thicknesses and annealing temperatures are observed and estimated by an X-ray diffractometer pattern (XRD) and full-width at half maximum (FWHM). The XRD of annealing Co40Fe40W10B10 films at 200 °C exhibited an amorphous status due to insufficient heating drive force. Moreover, the thicknesses and annealing temperatures of body-centered cubic (BCC) CoFe (110) peaks were detected when annealing at 250 °C with thicknesses ranging from 80 nm to 100 nm, annealing at 300 °C with thicknesses ranging from 50 nm to 100 nm, and annealing at 350 °C with thicknesses ranging from 10 nm to 100 nm. The FWHM of CoFe (110) decreased and the grain size increased when the thickness and annealing temperature increased. The CoFe (110) peak revealed magnetocrystalline anisotropy, which was related to strong low-frequency alternative-current magnetic susceptibility (χac) and induced an increasing trend in saturation magnetization (Ms) as the thickness and annealing temperature increased. The contact angles of all Co40Fe40W10B10 films were less than 90°, indicating the hydrophilic nature of Co40Fe40W10B10 films. Furthermore, the surface energy of Co40Fe40W10B10 presented an increased trend as the thickness and annealing temperature increased. According to the results, the optimal conditions are a thickness of 100 nm and an annealing temperature of 350 °C, owing to high χac, large Ms, and strong adhesion; this indicates that annealing Co40Fe40W10B10 at 350 °C and with a thickness of 100 nm exhibits good thermal stability and can become a free or pinned layer in a magnetic tunneling junction (MTJ) application. Full article
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12 pages, 2986 KiB  
Article
Effect of Yttrium Addition on Structure and Magnetic Properties of Co60Fe20Y20 Thin Films
by Wen-Jen Liu, Yung-Huang Chang, Yuan-Tsung Chen, Ding-Yang Tsai, Pei-Xin Lu, Shih-Hung Lin, Te-Ho Wu and Po-Wei Chi
Materials 2021, 14(20), 6001; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14206001 - 12 Oct 2021
Cited by 2 | Viewed by 1150
Abstract
In this paper, a Co60Fe20Y20 film was sputtered onto Si (100) substrates with thicknesses ranging from 10 to 50 nm under four conditions to investigate the structure, magnetic properties, and surface energy. Under four conditions, the crystal structure [...] Read more.
In this paper, a Co60Fe20Y20 film was sputtered onto Si (100) substrates with thicknesses ranging from 10 to 50 nm under four conditions to investigate the structure, magnetic properties, and surface energy. Under four conditions, the crystal structure of the CoFeY films was found to be amorphous by an X-ray diffraction analyzer (XRD), suggesting that yttrium (Y) added into CoFe films and can be refined in grain size and insufficient annealing temperatures do not induce enough thermal driving force to support grain growth. The saturation magnetization (MS) and low-frequency alternate-current magnetic susceptibility (χac) increased with the increase of the thicknesses and annealing temperatures, indicating the thickness effect and Y can be refined grain size and improved ferromagnetic spin exchange coupling. The highest Ms and χac values of the Co60Fe20Y20 films were 883 emu/cm3 and 0.26 when the annealed temperature was 300 °C and the thickness was 50 nm. The optimal resonance frequency (fres) was 50 Hz with the maximum χac value, indicating it could be used at a low frequency range. Moreover, the surface energy increased with the increase of the thickness and annealing temperature. The maximum surface energy of the annealed 300 °C film was 30.02 mJ/mm2 at 50 nm. Based on the magnetic and surface energy results, the optimal thickness was 50 nm annealed at 300 °C, which has the highest Ms, χac, and a strong adhesion, which can be as a free or pinned layer that could be combined with the magnetic tunneling layer and applied in magnetic fields. Full article
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