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Synthesis, Characterization, Theory, and Applications of Group-IV Alloys Containing Tin

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (20 September 2022) | Viewed by 4965

Special Issue Editor


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Guest Editor
Wright-Patterson AFB, Dayton, OH, USA
Interests: germanium-silicon-tin (GeSiSn); remote plasma-enhanced chemical vapor deposition (RPECVD); characterization; semiconductor devices

Special Issue Information

Dear Colleagues,

Group-IV alloys such as GeSiSn and GeSn, containing sufficiently high concentrations of tin, have a direct bandgap, offering the possibility for development of integrated, on-chip, photonic and electronic functionality. In addition, this material system provides new opportunities for low-cost fabrication of emitters and detectors operating in the short- and midwave-infrared spectral bands used by the telecom industry.  However, limited solubility of Sn in Ge and Si creates technical challenges to the use of these alloys in commercial applications. Special processes are required such as low-temperature, non-equilibrium growth methods to avoid phase segregation of Sn.

This Special Issue will focus on recent progress in these group-IV alloys, focused on the fundamental material properties of this system, from both theoretical and experimental perspectives, novel approaches to synthesis, as well as emitter and detector device fabrication and performance.  Topics may include but are not limited to:

  • GeSiSn, GeSn, SiSn, GeSiSnPb, GeSnPb alloys;
  • Thin film growth on Si, Ge, sapphire, or other substrates;
  • Effects of incorporating one or more buffer layers (e.g. Ge virtual substrate);
  • Suspended or released films;
  • Nanostructures;
  • Annealing processes (e.g. rapid thermal annealing, furnace annealing, laser recrystallization, etc.);
  • Band structure and local ordering;
  • Simulation of growth processes;
  • Electrical and optical properties;
  • Light-emitting diodes (LEDs) and lasers;
  • Infrared detectors and arrays.

Dr. Bruce B. Claflin
Guest Editor

Manuscript Submission Information

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Keywords

  • germanium-silicon-tin (GeSiSn)
  • synthesis
  • characterization
  • theory
  • devices
  • infrared
  • emitters
  • detectors

Published Papers (2 papers)

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Research

9 pages, 1768 KiB  
Article
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
by Chiao Chang, Hung-Hsiang Cheng, Gary A. Sevison, Joshua R. Hendrickson, Zairui Li, Imad Agha, Jay Mathews, Richard A. Soref and Greg Sun
Materials 2022, 15(3), 989; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15030989 - 27 Jan 2022
Cited by 11 | Viewed by 2499
Abstract
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at [...] Read more.
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation. Full article
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9 pages, 3062 KiB  
Article
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
by Joshua Grant, Grey Abernathy, Oluwatobi Olorunsola, Solomon Ojo, Sylvester Amoah, Emmanuel Wanglia, Samir K. Saha, Abbas Sabbar, Wei Du, Murtadha Alher, Bao-Hua Li and Shui-Qing Yu
Materials 2021, 14(24), 7637; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14247637 - 11 Dec 2021
Cited by 6 | Viewed by 2092
Abstract
Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve [...] Read more.
Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications. Full article
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