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Research on Materials and Properties of Organic Thin Film Transistors
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Research on Materials and Properties of Organic Thin Film Transistors

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (10 June 2022) | Viewed by 4993

Special Issue Editor

Prof. Benoit Hugo Lessard

E-Mail Website
Guest Editor
Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON K1N 6N5, Canada
Interests: organic thin film transistors; semiconductors; dielectrics; sensors; thin films; interface engineering

Special Issue Information

Dear Colleagues,

Organic thin film transistors are essential for the proliferation of inexpensive, flexible, and stretchable electronics and sensors that will fuel the Internet of Things. However, in some cases, the current state of the art material leads to devices that cannot be translated to real-world products. Improvement in the device performance (not just charge mobility) is critical. New materials and new device structures as well as a better evaluation of current materials is necessary. Better comparisons between families of materials, stability studies, and more thorough evaluation of device performance such as contact resistance as a function of processing conditions and film morphology is absent from the literature. Circuit design and prototype development is therefore limited to only a few materials that are comprehensively analyzed. I invite you to submit original work focused on the development of organic semiconductors, dielectrics/electrolytes, electrodes, and interfaces in the OTFT. In addition to new materials, I invite you to report on the study of processing conditions and treatment of existing materials used in OTFTs.

Prof. Benoit Hugo Lessard
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Organic thin film transistors
  • Organic semiconductors
  • Polymer dielectrics
  • Sensors
  • Thin films
  • Interface engineering
  • Electrolyte
  • Organic field effect transistor
  • Organic interface engineering
  • Solution processed
  • Thermal evaporation
  • Physical vapor deposition

Published Papers (2 papers)

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Research

10 pages, 3422 KiB  
Article
Low-Temperature-Processed High-Performance Pentacene OTFTs with Optimal Nd-Ti Oxynitride Mixture as Gate Dielectric
by Yuan-Xiao Ma, Pui-To Lai and Wing-Man Tang
Materials 2022, 15(6), 2255; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15062255 - 18 Mar 2022
Cited by 4 | Viewed by 1332
Abstract
When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. The Ti content in the NdTiON is varied by co-sputtering a Ti [...] Read more.
When processed at a low temperature of 200 °C, organic thin-film transistors (OTFTs) with pentacene channel adopting high-k Neodymium-Titanium oxynitride mixtures (NdTiON) with various Ti contents as gate dielectrics are fabricated. The Ti content in the NdTiON is varied by co-sputtering a Ti target at 0 W, 10 W, 20 W and 30 W, respectively, while fixing the sputtering power of an Nd target at 45 W. High-performance OTFT is obtained for the 20 W-sputtered Ti, including a small threshold voltage of −0.71 V and high carrier mobility of 1.70 cm2/V·s. The mobility improvement for the optimal Ti content can be attributed to smoother dielectric surface and resultant larger overlying pentacene grains as reflected by Atomic Force Microscopy measurements. Moreover, this sample with the optimal Ti content shows much higher mobility than its counterpart processed at a higher temperature of 400 °C (0.8 cm2/V·s) because it has a thinner gate-dielectric/gate-electrode interlayer for stronger screening on the remote phonon scattering by the gate electrode. In addition, a high dielectric constant of around 10 is obtained for the NdTiON gate dielectric that contributes to a threshold voltage smaller than 1 V for the pentacene OTFT, implying the high potential of the Nd-Ti oxynitride in future high-performance organic devices. Full article
(This article belongs to the Special Issue Research on Materials and Properties of Organic Thin Film Transistors)
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15 pages, 1638 KiB  
Article
Developing and Comparing 2,6-Anthracene Derivatives: Optical, Electrochemical, Thermal, and Their Use in Organic Thin Film Transistors
by Mikhail Y. Vorona, Nathan J. Yutronkie, Owen A. Melville, Andrew J. Daszczynski, Jeffrey S. Ovens, Jaclyn L. Brusso and Benoît H. Lessard
Materials 2020, 13(8), 1961; https://0-doi-org.brum.beds.ac.uk/10.3390/ma13081961 - 22 Apr 2020
Cited by 3 | Viewed by 3078
Abstract
Anthracene-based semiconductors have attracted great interest due to their molecular planarity, ambient and thermal stability, tunable frontier molecular orbitals and strong intermolecular interactions that can lead to good device field-effect transistor performance. In this study, we report the synthesis of six anthracene derivatives [...] Read more.
Anthracene-based semiconductors have attracted great interest due to their molecular planarity, ambient and thermal stability, tunable frontier molecular orbitals and strong intermolecular interactions that can lead to good device field-effect transistor performance. In this study, we report the synthesis of six anthracene derivatives which were di-substituted at the 2,6-positions, their optical, electrochemical and thermal properties, and their single crystal structures. It was found that 2,6-functionalization with various fluorinated phenyl derivatives led to negligible changes in the optical behaviour while influencing the electrochemical properties. Furthermore, the choice of fluorinated phenyl moiety had noticeable effects on melting point and thermal stability (ΔTm < 55 °C and ΔTd < 65 °C). Bottom-gate top-contact (BGTC) organic thin transistors (OTFTs) were fabricated and characterized using the 2,6-anthracene derivatives as the semiconducting layer. The addition of fluorine groups on the phenyl groups led to a transition from p-type behaviour to n-type behaviour in BGBC OTFTs. Full article
(This article belongs to the Special Issue Research on Materials and Properties of Organic Thin Film Transistors)
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