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Polar Semiconductors: Effects of Polarity on Crystal Growth and Electronic...
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Polar Semiconductors: Effects of Polarity on Crystal Growth and Electronic Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 1843

Special Issue Editor

Dr. Ilan Shalish

E-Mail Website
Guest Editor
School of Electrical and Computer Engineering, Ben-Gurion University, P.O.B 653, Beer-Sheva 84105, Israel
Interests: semiconductor material physics; surface science; wide bandgap semiconductors; polar semiconductors; ZnO; GaN; nanowire growth; semiconductor electronic devices; optical spectroscopies

Special Issue Information

Dear Colleagues,

Awareness of the special physics of polar semiconductors is ever-increasing, along with their use as electronic materials. Nonetheless, it is still quite low compared to that of well-studied, non-polar semiconductors. This is, in part, due to their absence in core-curriculum courses of electrical engineering and materials science. As a result, many crystal growth and device phenomena in polar semiconductors are often misinterpreted. At the same time, growing awareness to the effects of polarity leads to novel applications in new electronic devices. The aim of the forthcoming “Polar Semiconductors: Effects of Polarity on Crystal Growth and Electronic Devices” Special Issue is to present an up-to-date multidisciplinary overview of materials, structures (layered or nanostructures), and device aspects of polarity effects. The purpose of this issue is to gather studies and reviews on effects of polarity on crystal growth and electronic devices in polar semiconductors and their applications. Research articles, review articles, and communications relating to theory, simulation, processes, properties, and applications of polarity effects in polar semiconductors are all invited to this Special Issue.

Dr. Ilan Shalish
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • polarity
  • polar semiconductors
  • piezoelectricity
  • pyroelectricity
  • spontaneous polarization
  • crystal growth
  • heterostructure
  • nanostructures
  • wurtzite
  • polar charge
  • polar built-in field

Published Papers (1 paper)

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Research

16 pages, 5787 KiB  
Article
Impact of Backbone Amide Substitution at the Meta- and Para-Positions on the Gas Barrier Properties of Polyimide
by Qian Wen, Ao Tang, Chengliang Chen, Yiwu Liu, Chunguang Xiao, Jinghua Tan and Duxin Li
Materials 2021, 14(9), 2097; https://0-doi-org.brum.beds.ac.uk/10.3390/ma14092097 - 21 Apr 2021
Viewed by 1467
Abstract
This study designed and synthesised a meta-amide-substituted dianiline monomer (m-DABA) as a stereoisomer of DABA, a previously investigated para-amide-substituted dianiline monomer. This new monomer was polymerised with pyromellitic dianhydride (PMDA) to prepare a polyimide film (m-DABPI) in a process similar to that employed [...] Read more.
This study designed and synthesised a meta-amide-substituted dianiline monomer (m-DABA) as a stereoisomer of DABA, a previously investigated para-amide-substituted dianiline monomer. This new monomer was polymerised with pyromellitic dianhydride (PMDA) to prepare a polyimide film (m-DABPI) in a process similar to that employed in a previous study. The relationship between the substitution positions on the monomer and the gas barrier properties of the polyimide film was investigated via molecular simulation, wide-angle X-ray diffraction (WXRD), and positron annihilation lifetime spectroscopy (PALS) to gain deeper insights into the gas barrier mechanism. The results showed that compared with the para-substituted DABPI, the m-DABPI exhibited better gas barrier properties, with a water vapour transmission rate (WVTR) and an oxygen transmission rate (OTR) as low as 2.8 g·m−2·d−1 and 3.3 cm3·m−2·d−1, respectively. This was because the meta-linked polyimide molecular chains were more tightly packed, leading to a smaller free volume and lower molecular chain mobility. These properties are not conducive to the permeation of small molecules into the film; thus, the gas barrier properties were improved. The findings have significant implications for the structural design of high-barrier materials and could promote the development of flexible display technology. Full article
(This article belongs to the Special Issue Polar Semiconductors: Effects of Polarity on Crystal Growth and Electronic Devices)
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