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Recent Progress in Semiconductor Spintronics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 March 2022) | Viewed by 5537

Special Issue Editors


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Guest Editor
State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Interests: spintronics; semiconductor device; 2D materials

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Guest Editor
Department of Physics, Florida State University, Tallahassee, FL 32306, USA
Interests: semiconductor spintronics; low-dimensional systems; nanoscale quantum devices; biosensors

Special Issue Information

Dear Colleagues,

Semiconductor spintronics has been an active topic of research across multiple disciplines of materials science for more than two decades. It aims to engender novel electronic functionalities through combinations of intrinsic or injected magnetism with the exquisite control and giant tunability of charge transport in semiconductors.

In present-day microelectronics, information processing and communications are performed via the control and manipulation of charge motion in semiconductors, whereas information storage relies primarily on the magnetic state of the electrons, i.e., the spin. Both the performance and power consumption challenges facing charge-based microelectronics and the emergence of new information technologies such as wearable electronics, artificial intelligence, and the Internet of Things, call for new paradigms of microelectronics with better performance and even transformative new functionalities more urgently than ever. Semiconductor spintronics offers a promising route to realizing these goals. In addition to the many expected performance enhancements, such as higher speed and lower power consumption, and compatibility with existing semiconductor fabrication lines, it also promises a host of novel characteristics, such as nonvolatility, radiation hardness, and hardware reconfigurability. Moreover, the seamless integration of magnetism in semiconductors presents a platform where all three operations of logic, communication, and storage may be performed in the same devices, which offers the intriguing possibility for implementing new computing schemes, such as neuromorphic computing.

This Special Issue focuses on recent progresses in the broad areas of semiconductor spintronics. The research of interest includes ferromagnetic semiconductor materials and related devices, hybrid devices combining conventional ferromagnets with traditional semiconductors, organic semiconductors, topological insulators, or 2D van der Waals materials. We are pleased to invite submissions of manuscripts to this Special Issue. Full papers, communications, perspectives, and reviews are all welcome.

Prof. Dr. Kaiyou Wang
Prof. Dr. Peng Xiong
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ferromagnetic semiconductor
  • spin injection and manipulation
  • spintronic devices
  • topological insulator

Published Papers (3 papers)

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Research

9 pages, 1927 KiB  
Article
Degradation Effect and Magnetoelectric Transport Properties in CrBr3 Devices
by Yanfei Wu, Mengyuan Zhu, Ruijie Zhao, Xinjie Liu, Jianxin Shen, He Huang, Shipeng Shen, Liyuan Zhang, Jingyan Zhang, Xinqi Zheng and Shouguo Wang
Materials 2022, 15(9), 3007; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15093007 - 21 Apr 2022
Cited by 3 | Viewed by 1560
Abstract
Two-dimensional (2D) magnetic materials exhibiting unique 2D-limit magnetism have attracted great attention due to their potential applications in ultrathin spintronic devices. These 2D magnetic materials and their heterostructures provide a unique platform for exploring physical effect and exotic phenomena. However, the degradation of [...] Read more.
Two-dimensional (2D) magnetic materials exhibiting unique 2D-limit magnetism have attracted great attention due to their potential applications in ultrathin spintronic devices. These 2D magnetic materials and their heterostructures provide a unique platform for exploring physical effect and exotic phenomena. However, the degradation of most 2D magnetic materials at ambient conditions has so far hindered their characterization and integration into ultrathin devices. Furthermore, the effect of degradation on magnetoelectric transport properties, which is measured for the demonstration of exotic phenomena and device performance, has remained unexplored. Here, the first experimental investigation of the degradation of CrBr3 flakes and its effect on magnetoelectric transport behavior in devices is reported. The extra magnetic compounds derived from oxidation-related degradation play a significant role in the magnetoelectric transport in CrBr3 devices, greatly affecting the magnetoresistance and conductivity. This work has important implications for studies concerning 2D magnetic materials measured, stored, and integrated into devices at ambient conditions. Full article
(This article belongs to the Special Issue Recent Progress in Semiconductor Spintronics)
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8 pages, 1276 KiB  
Article
Antiferromagnetic Phase Induced by Nitrogen Doping in 2D Cr2S3
by Wenda Zhou, Mingyue Chen, Cailei Yuan, He Huang, Jingyan Zhang, Yanfei Wu, Xinqi Zheng, Jianxin Shen, Guyue Wang, Shouguo Wang and Baogen Shen
Materials 2022, 15(5), 1716; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15051716 - 24 Feb 2022
Cited by 1 | Viewed by 2147
Abstract
Exploration for the new members of air-stable 2D antiferromagnetic magnets to widen the magnetic families has drawn great attention due to its potential applications in spintronic devices. In addition to seeking the intrinsic antiferromagnets, externally introducing antiferromagnetic ordering in existing 2D materials, such [...] Read more.
Exploration for the new members of air-stable 2D antiferromagnetic magnets to widen the magnetic families has drawn great attention due to its potential applications in spintronic devices. In addition to seeking the intrinsic antiferromagnets, externally introducing antiferromagnetic ordering in existing 2D materials, such as structural regulation and phase engineering, may be a promising way to modulate antiferromagnetism in the 2D limit. In this work, the in situ nitrogen doping growth of ultrathin 2D Cr2S3 nanoflakes has been achieved. Antiferromagnetic ordering in 2D Cr2S3 nanoflakes can be triggered by nitrogen doping induced new phase (space group P3¯1c). This work provides a new route to realize antiferromagnetism in atomically thin 2D magnets and greatly extend applications of 2D magnets in valleytronics and spintronics. Full article
(This article belongs to the Special Issue Recent Progress in Semiconductor Spintronics)
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8 pages, 1875 KiB  
Article
Interfacial Effect on Photo-Modulated Magnetic Properties of Core/Shell-Structured NiFe/NiFe2O4 Nanoparticles
by Wenda Zhou, Mingyue Chen, He Huang, Guyue Wang, Xingfang Luo, Cailei Yuan, Jingyan Zhang, Yanfei Wu, Xinqi Zheng, Jianxin Shen, Shouguo Wang and Baogen Shen
Materials 2022, 15(4), 1347; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15041347 - 11 Feb 2022
Viewed by 1278
Abstract
Photo-modulated magnetism has become an emerging method for technological applications, such as magneto-optical devices. In this work, by introducing oxygen during rapid thermal annealing, NiFe/NiFe2O4 core/shell nanoparticles were successfully fabricated by pulsed laser deposition. Obvious photo-modulated ferromagnetism was observed in [...] Read more.
Photo-modulated magnetism has become an emerging method for technological applications, such as magneto-optical devices. In this work, by introducing oxygen during rapid thermal annealing, NiFe/NiFe2O4 core/shell nanoparticles were successfully fabricated by pulsed laser deposition. Obvious photo-modulated ferromagnetism was observed in core/shell nanoparticles confined in Al2O3 film. Theoretical and experimental investigations indicate much more photogenerated electrons are captured at the interface of NiFe/NiFe2O4 compared with NiFe nanoparticles due to interfacial effect, resulting in the improved ferromagnetism under light irradiation. This work provides a promising strategy for optical engineering design of optical information storage, high-speed wireless communication, and magneto-optical semiconductor devices. Full article
(This article belongs to the Special Issue Recent Progress in Semiconductor Spintronics)
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