Advances in GaN Materials
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".
Deadline for manuscript submissions: closed (10 April 2022) | Viewed by 2402
Special Issue Editor
Special Issue Information
Dear Colleagues,
The fundamental breakthrough of high-quality GaN material growth on sapphire substrate has led to the great success of highly efficient InGaN-based blue/white light-emitting diodes (LEDs), which has been recognized by the 2014 Nobel Prize for Physics. Recently, new progress has been made in the field of (Al, Ga, In)N material growth and characterization, including Al-rich Al(Ga)N and In-rich In(Ga)N film and heterostructures, free-standing GaN and AlN substrates, as well as III-nitride semiconductor nanostructures, which are enabling the fabrication and commercialization of high ultraviolet (UV)/green/yellow/red LEDs, laser diodes, and high electron mobility transistors with a great prospect in a wide array of applications, including 5G wireless communication base stations, consumer electronics power systems, micro-LED and laser displays, UV curing and sterilization, etc. This Special Issue will focus on the recent advances in GaN materials with feature articles covering the topics of free-standing GaN and AlN substrates growth and device homoepitaxy, Al-rich Al(Ga)N and In-rich In(Ga)N film and heterostructure growth, GaN heteroepitaxy with novel buffer like graphene, GaN-based material and device growth on Si substrates, III-nitride semiconductor nanostructure growth, etc.
The topics of interest include, but are not limited to:
- GaN and AlN crystal growth
- (Al, Ga, In)N thin film epitaxy
- (Al, Ga, In)N material characterization
- GaN-based optoelectronic and electronic devices
Dr. Qian Sun
Guest Editor
Manuscript Submission Information
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Keywords
- GaN
- strain
- defect
- light-emitting diode (LED)
- laser
- high electron mobility transistor (HEMT)
