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Atomic Layer Deposition: From Fundamentals to Applications
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Atomic Layer Deposition: From Fundamentals to Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: closed (10 April 2023) | Viewed by 13254

Special Issue Editors

Dr. Lukasz Wachnicki

E-Mail Website
Guest Editor
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warszawa, Poland
Interests: solid state physics; metal–oxide–semiconductor; atomic layer deposition; thin films; X-ray powder diffraction
Special Issues, Collections and Topics in MDPI journals
Dr. Sylwia Gierałtowska

E-Mail Website
Guest Editor
Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, 02-668 Warszawa, Poland
Interests: solid state physics; atomic layer deposition; thin films; dielectrics; high-k materials; semiconductors; antibacterial layers; atomic force microscopy; spintronics; electronics; photovoltaics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

For many years, atomic layer deposition (ALD) has been one of the most popular and powerful techniques for obtaining thin films due to its many advantages over other methods, which manifest in distinct areas such as uniform coating of large substrates with low defect density, reproducibility of deposition at the nanometer scale, and low growth temperature. These properties make ALD an ideal technology to obtain materials in which developments have been fundamental elements in many fields of science, such as electronics, spintronics, and photovoltaics, to name but few.

This Special Issue of Materials "Atomic Layer Deposition: From Fundamentals to Applications" will publish original research articles on the recent advances in high-k materials obtained by the ALD method, which include various chemical precursors, surface and interface characterization techniques, ALD film growth and, finally, applications of high-k ALD resulting from the development of faster silicon chips, leading to increased solar panel efficiency and the improved safety of medical implants.

Potential topics include the following:

  • Novel applications of high-k ALD
  • Dielectric thin film characterizations
  • Properties film types depending on substrate and growth parameters
  • Multilayer coatings, heterostructures, nanolaminates, mixed films, and doping
  • Depositing high-quality films to challenging substrates such as heterostructures, nanotubes, organic semiconductors, etc.
  • New reaction mechanisms, precursors, and applications
  • Modeling of reaction mechanisms
  • Barrier layers and protective coatings
  • Advanced characterizations
  • Applications of high-k ALD as electronics, spintronics, photovoltaics, or medical components

Dr. Lukasz Wachnicki
Dr. Sylwia Gierałtowska
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • atomic layer deposition
  • high-k thin film
  • dielectric
  • multilayer
  • nanolaminate
  • coating
  • characterization
  • modeling
  • ALD chemical precursor

Published Papers (6 papers)

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Research

19 pages, 43738 KiB  
Article
Atomic Layer Deposition of HfO2 Films Using TDMAH and Water or Ammonia Water
by Sylwia Gieraltowska, Lukasz Wachnicki, Piotr Dluzewski, Bartlomiej S. Witkowski, Marek Godlewski and Elzbieta Guziewicz
Materials 2023, 16(11), 4077; https://0-doi-org.brum.beds.ac.uk/10.3390/ma16114077 - 30 May 2023
Viewed by 1384
Abstract
Atomic layer deposition of HfO2 from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2–1.6 Å. At low temperatures (≤100 °C), the films grew faster [...] Read more.
Atomic layer deposition of HfO2 from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2–1.6 Å. At low temperatures (≤100 °C), the films grew faster and are structurally more disordered, amorphous and/or polycrystalline with crystal sizes up to 29 nm, compared to the films grown at higher temperatures. At high temperatures of 240 °C, the films are better crystallized with crystal sizes of 38–40 nm but grew slower. GPC, dielectric constant, and crystalline structure are improved by depositing at temperatures above 300 °C. The dielectric constant value and the roughness of the films have been determined for monoclinic HfO2, a mixture of orthorhombic and monoclinic, as well as for amorphous HfO2. Moreover, the present study shows that the increase in the dielectric constant of the films can be achieved by using ammonia water as an oxygen precursor in the ALD growth. The detailed investigations of the relationship between HfO2 properties and growth parameters presented here have not been reported so far, and the possibilities of fine-tuning and controlling the structure and performance of these layers are still being sought. Full article
(This article belongs to the Special Issue Atomic Layer Deposition: From Fundamentals to Applications)
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13 pages, 2408 KiB  
Article
Electrical and Structural Properties of Semi-Polar-ZnO/a-Al2O3 and Polar-ZnO/c-Al2O3 Films: A Comparative Study
by Sushma Mishra, Wojciech Paszkowicz, Adrian Sulich, Rafal Jakiela, Monika Ożga and Elżbieta Guziewicz
Materials 2023, 16(1), 151; https://0-doi-org.brum.beds.ac.uk/10.3390/ma16010151 - 23 Dec 2022
Viewed by 1131
Abstract
In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a–(100) and c–(001) oriented Al2O3 substrate are reported. The films were grown in the same growth conditions and parameters [...] Read more.
In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a–(100) and c–(001) oriented Al2O3 substrate are reported. The films were grown in the same growth conditions and parameters at six different growth temperatures (Tg) ranging from 100 °C to 300 °C. All as-grown and annealed films were found to be polycrystalline, highly (001) oriented for the c–Al2O3 and highly (101) oriented for the a–Al2O3 substrate. The manifestation of semi-polar-(101) and polar (001)–oriented ZnO films on the same substrate provided the opportunity for a comparative study in terms of the influence of polarization on the electrical and structural properties of ZnO films. It was found that the concentration of hydrogen, carbon, and nitrogen impurities in polar (001)–oriented films was considerably higher than in semi-polar (101)–oriented ZnO films. The study showed that when transparent conductive oxide applications were considered, the ZnO layers could be deposited at a temperature of about 160 °C, because, at this growth temperature, the high electrical conductivity was accompanied by surface smoothness in the nanometer scale. On the contrary, semi-polar (101)–oriented films might offer a perspective for obtaining p-type ZnO films, because the concentration of carbon and hydrogen impurities is considerably lower than in polar films. Full article
(This article belongs to the Special Issue Atomic Layer Deposition: From Fundamentals to Applications)
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10 pages, 4908 KiB  
Article
Microstructure and Antimicrobial Properties of Zr-Cu-Ti Thin-Film Metallic Glass Deposited Using High-Power Impulse Magnetron Sputtering
by Jian-Fu Tang, Po-Yuan Huang, Ja-Hon Lin, Ting-Wei Liu, Fu-Chi Yang and Chi-Lung Chang
Materials 2022, 15(7), 2461; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15072461 - 27 Mar 2022
Cited by 4 | Viewed by 2016
Abstract
Zr-Cu based thin-film metallic glass (TFMG) has good glass-forming ability and the addition of a third element can create a chaotic system capable of inhibiting the nucleation and growth of crystals. This study focused on TFMGs made with Zr, Cu, and Ti in [...] Read more.
Zr-Cu based thin-film metallic glass (TFMG) has good glass-forming ability and the addition of a third element can create a chaotic system capable of inhibiting the nucleation and growth of crystals. This study focused on TFMGs made with Zr, Cu, and Ti in various compositions deposited via high-impulse magnetron sputtering on silicon and 304 stainless-steel substrates. Detailed analysis was performed on the microstructure and surface characteristics of the resulting coatings. Transmission electron microscopy revealed that the multilayer structure changed to a nanocrystalline structure similar to an amorphous coating. The excellent hydrophobicity of Zr-Cu-Ti TFMGs can be attributed to their ultra-smooth surface without any grain boundaries. The excellent antimicrobial effects can be attributed to a hydrophobic surface resisting cell adhesion and the presence of copper ions, which are lethal to microbes. Full article
(This article belongs to the Special Issue Atomic Layer Deposition: From Fundamentals to Applications)
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8 pages, 1477 KiB  
Article
Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films
by Chan-Hee Jang, Hyun-Seop Kim, Hyungtak Kim and Ho-Young Cha
Materials 2022, 15(6), 2097; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15062097 - 12 Mar 2022
Cited by 5 | Viewed by 3802
Abstract
In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO2 film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 [...] Read more.
In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO2 film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were achieved after postdeposition annealing at 650 °C, which exhibited a remanent polarization of 8 μC/cm2 and a coercive electric field of 1.6 MV/cm at 25 °C (room temperature). The ferroelectric property was maintained at 200 °C and decreased as the temperature increased. The ferroelectric property was completely lost above 320 °C and fully recovered after cooling. The frequency dependency was evaluated by bias-dependent capacitance–voltage and s-parameter measurements, which indicated that the ferroelectric property was maintained up to several hundred MHz. This study reveals the ultimate limitations of the application of an undoped HfO2 MFM capacitor. Full article
(This article belongs to the Special Issue Atomic Layer Deposition: From Fundamentals to Applications)
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16 pages, 5179 KiB  
Article
Atypical Properties of a Thin Silver Layer Deposited on a Composite Textile Substrate
by Marcin Lebioda and Ewa Korzeniewska
Materials 2022, 15(5), 1814; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15051814 - 28 Feb 2022
Cited by 2 | Viewed by 1353
Abstract
Thin layers are widely used in electronics and protective coatings. They are also increasingly used in wearable electronics. A major challenge affecting the use of thin layers is their connection to flexible substrates, particularly textile products. This article describes the stability of the [...] Read more.
Thin layers are widely used in electronics and protective coatings. They are also increasingly used in wearable electronics. A major challenge affecting the use of thin layers is their connection to flexible substrates, particularly textile products. This article describes the stability of the resistance of a silver layer with a thickness of 250 nm in a wide temperature range of 15–295 K. The aim was to determine the temperature dependence of the resistance of layers formed on a composite textile substrate compared with that of layers produced on an Al2O3 substrate. The results showed that the electrical parameters of the layer formed on the composite textile substrate changed in a manner atypical for metallic layers. This may have been due to the polyurethane base layer. The roughness and ability to deform under the influence of heat of the substrate can significantly affect the electrical parameters of a thin metal layer produced by the PVD coating process, which is important for the design of textronic applications. Full article
(This article belongs to the Special Issue Atomic Layer Deposition: From Fundamentals to Applications)
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16 pages, 3692 KiB  
Article
Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition
by Kaupo Kukli, Lauri Aarik, Guillermo Vinuesa, Salvador Dueñas, Helena Castán, Héctor García, Aarne Kasikov, Peeter Ritslaid, Helle-Mai Piirsoo and Jaan Aarik
Materials 2022, 15(3), 877; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15030877 - 24 Jan 2022
Cited by 3 | Viewed by 2294
Abstract
Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference films crystallized in the stable monoclinic phase of HfO [...] Read more.
Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference films crystallized in the stable monoclinic phase of HfO2. Mixing HfO2 and PrOx resulted in the growth of nanocrystalline metastable tetragonal HfO2. The highest relative permittivities reaching 37–40 were measured for the films with tetragonal structures that were grown using HfO2:PrOx cycle ratio of 5:1 and possessed Pr/(Pr + Hf) atomic ratios of 0.09–0.10. All the HfO2:PrOx films exhibited resistive switching behavior. Lower commutation voltages and current values, promising in terms of reduced power consumption, were achieved for the films grown with HfO2:PrOx cycle ratios of 3:1 and 2:1 and showing Pr/(Pr + Hf) atomic ratios of 0.16–0.23. Differently from the undoped HfO2 films, the Pr-doped films showed low variability of resistance state currents and stable endurance behavior, extending over 104 switching cycles. Full article
(This article belongs to the Special Issue Atomic Layer Deposition: From Fundamentals to Applications)
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