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Nanowires: Growth and Applications
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Nanowires: Growth and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: closed (10 February 2024) | Viewed by 3545

Special Issue Editor

Prof. Dr. Shengjun Zhou

E-Mail Website1 Website2
Guest Editor
Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
Interests: semiconductors; light-emitting diodes; epitaxy growth; full-color display; micro-LEDs; solid-state lighting

Special Issue Information

Dear Colleagues,

Nanowires (NWs) are one of the best defined and controlled classes of nanostructures in nanoscience and nanotechnology. Most of the key parameters of NWs, including diameter, length, chemical composition, doping, and growth direction, can be rationally controlled, resulting in a well-defined growth of NWs. The unique control over the microstructure of NWs has enabled them to become a promising building block for various devices and integration strategies.

Today, it is widely recognized that the rational design and synthesis of NWs are critical to understanding fundamental properties and developing novel devices. The Special Issue will compile recent developments in the field of NWs, focusing on the growth and applications of NWs. The articles presented in this Special Issue will cover various topics, ranging from but not limited to the growth strategies of NWs, synthesis of NWs, organization and assembly of NWs, functionalization of NWs, nanoelectronic devices, flexible electronics, nanophotonics, and nano-LEDs.

Prof. Dr. Shengjun Zhou
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • epitaxy growth
  • controlled synthesis
  • organization and assembly
  • functionalization
  • nanoelectronic devices
  • flexible electronics
  • nanophotonics
  • nano-LEDs

Published Papers (2 papers)

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Research

9 pages, 2007 KiB  
Article
In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes
by Siyuan Cui, Guoyi Tao, Liyan Gong, Xiaoyu Zhao and Shengjun Zhou
Materials 2022, 15(23), 8649; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15238649 - 04 Dec 2022
Cited by 1 | Viewed by 1213
Abstract
Highly efficient indium gallium nitride (InGaN)-based yellow light-emitting diodes (LEDs) with low efficiency droop have always been pursued for next-generation displays and lighting products. In this work, we report an InGaN quantum barrier (QB) with linear-increase In-composition along [0001] direction for InGaN-based yellow [...] Read more.
Highly efficient indium gallium nitride (InGaN)-based yellow light-emitting diodes (LEDs) with low efficiency droop have always been pursued for next-generation displays and lighting products. In this work, we report an InGaN quantum barrier (QB) with linear-increase In-composition along [0001] direction for InGaN-based yellow LEDs. With the In-composition in QBs systematically engineered, three QB structures including linear-increase QB (LIQB), linear-decrease QB (LDQB) and commonly used flat QB (FQB) were investigated by simulation. The results show that the LIQB not only yields enhanced electron confinement, but also contributes to suppressed polarization field. Consequently, the yellow LED incorporated with LIQBs demonstrates improved radiative recombination rates and the efficiency droop is alleviated. Under a current density of 100 A/cm2, the efficiency droop ratios of LEDs with FQBs, LDQBs and LIQBs are 58.7%, 62.2% and 51.5%, respectively. When current density varies from 1 A/cm2 to 60 A/cm2, the blueshift values of peak emission wavelength for LEDs with FQBs, LDQBs and LIQBs are 14.4 nm, 16.5 nm and 13.0 nm, respectively. This work is believed to provide a feasible solution for high-performance InGaN-based LEDs in long-wavelength spectral region. Full article
(This article belongs to the Special Issue Nanowires: Growth and Applications)
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15 pages, 5503 KiB  
Article
Aluminum Doping Effect on Surface Structure of Silver Ultrathin Films
by Han Yan, Xiong Xu, Peng Li, Peijie He, Qing Peng and Can Ding
Materials 2022, 15(2), 648; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15020648 - 15 Jan 2022
Cited by 2 | Viewed by 1579
Abstract
Ultrathin silver films with low loss in the visible and near-infrared spectrum range have been widely used in the fields of metamaterials and optoelectronics. In this study, Al-doped silver films were prepared by the magnetron sputtering method and were characterized by surface morphology, [...] Read more.
Ultrathin silver films with low loss in the visible and near-infrared spectrum range have been widely used in the fields of metamaterials and optoelectronics. In this study, Al-doped silver films were prepared by the magnetron sputtering method and were characterized by surface morphology, electrical conductivity, and light transmittance analyses. Molecular dynamics simulations and first-principles density functional theory calculations were applied to study the surface morphologies and migration pathway for the formation mechanisms in Al-doped silver films. The results indicate that the migration barrier of silver on a pristine silver surface is commonly lower than that of an Al-doped surface, revealing that the aluminum atoms in the doping site decrease the surface mobility and are conducive to the formation of small islands of silver. When the islands are dense, they coalesce into a single layer, leading to a smoother surface. This might be the reason for the observably lower 3D growth mode of silver on an Al-doped silver surface. Our results with electronic structure insights on the mechanism of the Al dopants on surface morphologies might benefit the quality control of the silver thin films. Full article
(This article belongs to the Special Issue Nanowires: Growth and Applications)
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