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Electronic and Optical Properties of Semiconductor Nanocrystals

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: closed (10 September 2022) | Viewed by 1823

Special Issue Editor


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Guest Editor
CICECO—Aveiro Institute of Materials, Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal
Interests: low-dimensional semiconductors; silicon nanocrystals; sustainable materials; Raman spectroscopy; photoluminescence; photovoltaics; optoelectronics
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Special Issue Information

Dear Colleagues,

The global quest for developing sustainable and energy-efficient electronics and optoelectronics has motivated the scientific community and industry to look toward reducing the size and improving the properties and functionalities of semiconductor materials. In this regard, semiconductor nanocrystals encompass a material platform whose physical-chemical properties can be strategically tailored for target applications through, for example, control of size, shape, composition, and surface termination. Despite impressive advances in the demonstration of devices with good charge transport characteristics, tunable light emission, and efficient light absorption, such as field-effect transistors, solar cells, light-emitting devices, and photodetectors, further progress needs to be reached towards improving their performance. This can only be achieved through deep characterization and a fundamental understanding of the material's properties, including unveiling the phenomena ruling at the nanoscale.

In this Special Issue, we welcome papers focused on the latest advances in the study of electronic and optical properties of semiconductor nanocrystals as well as on their possible application in optoelectronic devices.

Dr. Bruno Falcão
Guest Editor

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Keywords

  • semiconductor nanocrystals
  • electronic and optical properties
  • charge transport
  • luminescence
  • raman spectroscopy
  • size and surface engineering
  • electronic band structure
  • optoelectronic devices

Published Papers (1 paper)

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Research

12 pages, 2075 KiB  
Article
Structural and Electronic Properties of SnO Downscaled to Monolayer
by Adil Mubeen, Abdul Majid, Mohammad Alkhedher, ElSayed M. Tag-ElDin and Niyazi Bulut
Materials 2022, 15(16), 5578; https://0-doi-org.brum.beds.ac.uk/10.3390/ma15165578 - 13 Aug 2022
Cited by 4 | Viewed by 1449
Abstract
Two-dimensional (2D) SnO is a p-type semiconductor that has received research and industrial attention for device-grade applications due to its bipolar conductivity and transparent semiconductor nature. The first-principles investigations based on the generalized gradient approximation (GGA) level of theory often failed to accurately [...] Read more.
Two-dimensional (2D) SnO is a p-type semiconductor that has received research and industrial attention for device-grade applications due to its bipolar conductivity and transparent semiconductor nature. The first-principles investigations based on the generalized gradient approximation (GGA) level of theory often failed to accurately model its structure due to interlayer Van der Waals interactions. This study is carried out to calculate structural and electronic properties of bulk and layered structures of SnO using dispersion correction scheme DFT+D3 with GGA-PBE to deal with the interactions which revealed good agreement of the results with reported data. The material in three-dimensional bulk happened to be an indirect gap semiconductor with a band gap of 0.6 eV which is increased to 2.85 eV for a two-dimensional monolayer structure. The detailed analysis of the properties demonstrated that the SnO monolayer is a promising candidate for future optoelectronics and spintronics devices, especially thin film transistors. Full article
(This article belongs to the Special Issue Electronic and Optical Properties of Semiconductor Nanocrystals)
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