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Optical Materials for White Light Emitting Diodes (WLEDs)
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Optical Materials for White Light Emitting Diodes (WLEDs)

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 14350

Special Issue Editors

Prof. Arturas Katelnikovas

E-Mail Website
Guest Editor
Faculty of Chemistry and Geosciences, Institute of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius, Lithuania
Interests: LED phosphors, carbon quantum dots, photochemistry, nanoparticle synthesis, luminescence spectroscopy
Prof. Simas Sakirzanovas

E-Mail Website
Guest Editor
Faculty of Chemistry and Geosciences, Institute of Chemistry, Vilnius University, Naugarduko 24, LT-03225 Vilnius, Lithuania
Interests: upconverting nanoparticles, luminescence spectroscopy, functional materials, high pressure synthesis, materials science

Special Issue Information

Dear Colleagues,

The efficiency of blue and near-UV LED chips are ever increasing and it is only a matter of time until solid state light sources replace the conventional incandescent, halogen and even fluorescent light bulbs. Thus the demand for high-efficiency phosphors that can be excited in the blue or near-UV spectral region is very high. The topics of this Special Issue include, but are not limited to, the following:

  • Novel synthesis techniques
  • Efficiency improvement
  • Methods of quantum efficiency measurements
  • Particle shape optimization
  • Thermal quenching improvement
  • Phosphor ceramics
  • Garnet phosphors
  • Silicate phosphors
  • Oxide-based phosphors
  • Sulfides
  • Oxynitrides and nitrides
  • Phosphors for near-UV LEDs
  • Single-phase, white-light-emitting phosphors
  • Blue/cyan-emitting phosphors
  • Green/yellow-emitting phosphors
  • Orange/red-emitting phosphors

We would like to take this opportunity to invite you to submit your manuscripts to the Special Issue “Optical Materials for White-Light-Emitting Diodes (WLEDs)” of Materials in the form of full research article, short communication or a review.

Prof. Arturas Katelnikovas
Prof. Simas Sakirzanovas
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • LED phosphors
  • synthesis
  • quantum efficiency
  • thermal quenching
  • rare-earth ions
  • transition metal ions
  • luminescence

Published Papers (5 papers)

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Research

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14 pages, 55666 KiB  
Article
Finite Element Simulation of the Machining Process of Boiling Structures in a Novel Radial Heat Sink for High-Power LEDs
by Jianhua Xiang, Zeyu Liu, Chunliang Zhang, Chao Zhou and Conggui Chen
Materials 2020, 13(18), 3958; https://0-doi-org.brum.beds.ac.uk/10.3390/ma13183958 - 07 Sep 2020
Cited by 2 | Viewed by 1690
Abstract
A phase change heat sink has higher heat transfer efficiency compared to a traditional metal solid heat sink, and is thus more preferred for the heat dissipation of high-power light-emitting diodes (LEDs) with very high heat flux. The boiling structure at the evaporation [...] Read more.
A phase change heat sink has higher heat transfer efficiency compared to a traditional metal solid heat sink, and is thus more preferred for the heat dissipation of high-power light-emitting diodes (LEDs) with very high heat flux. The boiling structure at the evaporation surface is the biggest factor that affects heat sink resistance. It is necessary to investigate the plastic deformation law during the machining process of boiling structures. In this study, a novel phase change radial heat sink was developed for high-power LED heat dissipation. First, a working principle and a fabrication process for the heat sink were introduced. Subsequently, to achieve an excellent heat dissipation performance, the machining process of boiling structures was numerically simulated and investigated. To be specific, plastic deformation generated during the formation was analyzed, and key parameters related to the morphology of the boiling structures were discussed including feeding angles and machining depths. Moreover, the finite element (FE) simulation results were compared with those of experiments. Last but not least, the heat transfer performance of the fabricated heat sink was tested. Results showed that the developed heat sink was well suited for a high-power LED application. Full article
(This article belongs to the Special Issue Optical Materials for White Light Emitting Diodes (WLEDs))
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13 pages, 2357 KiB  
Article
Temperature-Dependent Luminescence of Red-Emitting Ba2Y5B5O17: Eu3+ Phosphors with Efficiencies Close to Unity for Near-UV LEDs
by Egle Ezerskyte, Julija Grigorjevaite, Agne Minderyte, Sebastien Saitzek and Arturas Katelnikovas
Materials 2020, 13(3), 763; https://0-doi-org.brum.beds.ac.uk/10.3390/ma13030763 - 07 Feb 2020
Cited by 15 | Viewed by 2857
Abstract
Solid state white light sources based on a near-UV LED chip are gaining more and more attention. This is due to the increasing efficiency of near-UV-emitting LED chips and wider phosphors selection if compared to devices based on blue LED chips. Here, a [...] Read more.
Solid state white light sources based on a near-UV LED chip are gaining more and more attention. This is due to the increasing efficiency of near-UV-emitting LED chips and wider phosphors selection if compared to devices based on blue LED chips. Here, a brief overview is given of the concepts of generating white light employing near-UV LED and some optical properties of the available phosphors are discussed. Finally, the synthesis and optical properties of very efficient red-emitting Ba2Y5B5O17:Eu3+ phosphor powder and ceramics is reported and discussed in terms of possible application as a red component in near-UV LED-based white light sources. Full article
(This article belongs to the Special Issue Optical Materials for White Light Emitting Diodes (WLEDs))
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14 pages, 4058 KiB  
Article
Optical Properties of Red-Emitting Rb2Bi(PO4)(MoO4):Eu3+ Powders and Ceramics with High Quantum Efficiency for White LEDs
by Julija Grigorjevaite, Egle Ezerskyte, Agne Minderyte, Sandra Stanionyte, Remigijus Juskenas, Simas Sakirzanovas and Arturas Katelnikovas
Materials 2019, 12(19), 3275; https://0-doi-org.brum.beds.ac.uk/10.3390/ma12193275 - 08 Oct 2019
Cited by 13 | Viewed by 2711
Abstract
There are several key requirements that a very good LED phosphor should meet, i.e., strong absorption, high quantum efficiency, high colour purity, and high luminescence quenching temperature. The reported Rb2Bi(PO4)(MoO4):Eu3+ phosphors have all these properties. The [...] Read more.
There are several key requirements that a very good LED phosphor should meet, i.e., strong absorption, high quantum efficiency, high colour purity, and high luminescence quenching temperature. The reported Rb2Bi(PO4)(MoO4):Eu3+ phosphors have all these properties. The Rb2Bi(PO4)(MoO4):Eu3+ phosphors emit bright red light if excited with near-UV radiation. The calculated colour coordinates show good stability in the 77–500 K temperature range. Moreover, sample doped with 50% Eu3+ possesses quantum efficiency close to unity. Besides the powder samples, ceramic disks of Rb2Eu(PO4)(MoO4) specimen were also prepared, and the red light sources from these disks in combination with near-UV emitting LED were fabricated. The obtained results indicated that ceramic disks efficiently absorb the emission of 375 and 400 nm LED and could be applied as a red component in phosphor-converted white LEDs. Full article
(This article belongs to the Special Issue Optical Materials for White Light Emitting Diodes (WLEDs))
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Review

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17 pages, 2883 KiB  
Review
Van der Waals Epitaxy of III-Nitrides and Its Applications
by Qi Chen, Yue Yin, Fang Ren, Meng Liang, Xiaoyan Yi and Zhiqiang Liu
Materials 2020, 13(17), 3835; https://0-doi-org.brum.beds.ac.uk/10.3390/ma13173835 - 31 Aug 2020
Cited by 7 | Viewed by 3013
Abstract
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be [...] Read more.
III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected. Full article
(This article belongs to the Special Issue Optical Materials for White Light Emitting Diodes (WLEDs))
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26 pages, 6929 KiB  
Review
Exploration of the Structural and Photophysical Characteristics of Mono- and Binuclear Ir(III) Cyclometalated Complexes for Optoelectronic Applications
by Adewale Olufunsho Adeloye
Materials 2019, 12(17), 2734; https://0-doi-org.brum.beds.ac.uk/10.3390/ma12172734 - 26 Aug 2019
Cited by 10 | Viewed by 3165
Abstract
Intrinsic characteristics possessed and exhibited by Ir(III) cyclometalated complexes need to be further examined, understood, and explored for greater value enhancement and potentiation. This work focuses primarily on the comparative studies of the ligand structures, types, and their substituent influence on the photophysical [...] Read more.
Intrinsic characteristics possessed and exhibited by Ir(III) cyclometalated complexes need to be further examined, understood, and explored for greater value enhancement and potentiation. This work focuses primarily on the comparative studies of the ligand structures, types, and their substituent influence on the photophysical and optoelectronic properties of typical cyclometalated mono- and binuclear iridium(III) complexes in solution or solid states. Full article
(This article belongs to the Special Issue Optical Materials for White Light Emitting Diodes (WLEDs))
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