Special Issue "Innovative Methods for Semiconductor Doping"

A special issue of Micro (ISSN 2673-8023). This special issue belongs to the section "Microscale Materials Science".

Deadline for manuscript submissions: 28 February 2022.

Special Issue Editors

Dr. Rosaria A. Puglisi
E-Mail Website
Guest Editor
Institute for Microelectronics and Microsystems, National Research Council, Strada Ottava 5 Z.I., 95121 Catania, Italy
Interests: silicon; nanostructures; nanotechnologies; silicon based optoelectronic devices; enhanced light–matter interaction
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Jost Adam
E-Mail Website
Guest Editor
Department of Mechanical and Electrical Engineering, University of Southern Denmark, Alsion 2, 6400, Sønderborg, Denmark
Interests: computational and mathematical modelling for photonic materials and structures, sensing, energy conversion, and lighting
Special Issues, Collections and Topics in MDPI journals
Dr. Ray Duffy
E-Mail Website
Guest Editor
Affiliation: Tyndall National Institute, University College Cork, Cork, Ireland
Interests: Emerging Materials and Devices for future Nanoelectronic; ICT; Sensing and Quantum applications; encompassing fabrication, characterisation and modelling of nanowire and thin film devices

Special Issue Information

Dear Colleagues,

We are glad to present this Special Issue of the Journal Micro, entitled: "Innovative methods for semiconductor doping." Its objective is to provide up-to-date, relevant references on the advanced doping techniques for semiconductors currently under investigation by the scientific and industrial communities. The International Roadmap for Devices and Systems (IRDS™) has requested advanced concepts for higher performance and energy efficient devices. As far as scaling is concerned, new device architectures such as double or tri-gate and nanowires or nanosheets have been introduced. Fin field-effect transistors have already become mainstream, but the technology still requests other vertical gate-all-around architecture advancements. The challenges in pursuing these objectives are the inability to obtain conformality through the conventional doping methods, the surface defect effects, the dopant activation, and the losses due to the parasitic resistances. Many of these effects compromise the high-mobility benefits of the vertical structure, undermining these new approaches' technological relevance. In this perspective, new paradigms in alternative doping solutions have been developed, such as monolayer doping, laser annealing, plasma-based processes, to name a few. These new advances' maturity level is up to lab-scale device application, but still, many aspects need improvement and deeper studies for the very large-scale integration (VLSI). Another current interest in higher performance versus energy efficiency is related to silicon carbide doping, widely used in high power devices. Here, the open challenges for the in-situ and ex-situ cases are the high-temperature activation processes, incomplete dopant ionization, dopant profiling, ohmic contact formation, impurity lattice location, as well as lattice distortions. Many of the concepts listed so far refer to inorganic semiconductors and their alloys. A rising interesting field is doping in organic semiconductors. The doping concepts differ significantly for inorganic and organic semiconductors due to fundamental differences in, e.g., transport and electron-hole generation mechanisms. In organics, doping has been mostly excluded mainly for the uncontrollable diffusion. As a result, organic electronics currently suffer from low performance and manufacturing difficulties. Breakthroughs in doping organic semiconductors have, however, demonstrated that doping is key to enable high‐performance. The fundamentals in doping basics, mechanisms and techniques, the phenomena observed, and the doping role in the desired electrical characteristics are currently open issues. With the introduction of these approaches in organic and inorganic semiconductors, simulations from ab-initio to TCAD can help explore the new options by designing and assisting experiments.

This Special Issue will welcome high quality experimental and modeling studies on the above-mentioned developments in advanced semiconductor doping techniques. The list of key topics is reported in the following:

  • Different Substrates (Si, SiC, Ge, SiGe, InGaAs, GaP, organic materials...)
  • Doping Technologies and Processes: Ion Implantation, Plasma Doping, Molecular, Gas and Solid Doping.
  • Annealing Technologies and Processes: Rapid Thermal Processing, Laser Annealing, Flash Annealing, SPE, Silicide, Contact and Dielectric Formation, Lattice Damage and Defect
  • Device Applications: CMOS, Memory, Power (SiC, GaN), RF-SOI, Image Sensors, IoT Devices, Photovoltaics, III-V Devices
  • Metrologies: Chemical, Physical and Electrical Characterization of 2D and 3D Structures
  • Modeling and Simulations (from ab-initio to TCAD) of all of the above.

Dr. Rosaria A. Puglisi

Prof. Dr. Jost Adam

Dr. Ray Duffy

Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micro is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • Semiconductors
  • Doping Technology
  • Annealing Technology
  • Device Application
  • Metrology
  • Simulations

Published Papers

This special issue is now open for submission, see below for planned papers.

Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Electrical and Optical doping of Si by Pulsed Laser Melting
Prof. Jim Williams, Dr. Shao Qi Lim


Selective Doping in Silicon Carbide Power Devices

Prof. Fabrizio Roccaforte

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