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Micromachines
Special Issues
Electronic and Optoelectronic Devices Based on 2D Materials
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Electronic and Optoelectronic Devices Based on 2D Materials

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: closed (30 June 2022) | Viewed by 5288

Special Issue Editor

Dr. Kai Xu

E-Mail Website
Guest Editor
ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou 310027, China
Interests: 2D materials; electronic and optoelectronic devices; neuromorphic computing and sensors

Special Issue Information

Dear Colleagues,

Since the discovery of graphene in 2004, two-dimensional (2D) materials have attracted widespread attention due to their impressive machinal, electrical, and photonic properties. More importantly, the unique structure of 2D materials enables the random construction of 2D heterostructures and novel functionality in many research fields. Stacking 2D materials enables a wide range of homojunctions and heterojunctions, which provides a powerful platform for novel physical phenomena and high-performance devices. For example, recently, magic-angle graphene superlattices have represented a zealous new development. Of course, there are a number of challenges to overcome in order to fully utilize the potential of these 2D materials, including how to realize scalable synthesis, random stacking, and compatibility with and supplementation of silicon products. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on the following: (1) important fabrication techniques, such as synthesis methods, doping, contact engineering, dielectrics, and interfaces; (2) electronic and optoelectronic devices, such as transistors, memory devices, photodetectors, photovoltaics, and light-emitting diodes; (3) novel multidisciplinary devices and systems, such as electronic inks, printable and flexible electronics, high-speed electronics, and neuromorphic computing and sensors.

We look forward to receiving your submissions!

Dr. Kai Xu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • two-dimensional materials
  • electronics
  • optoelectronic devices

Published Papers (2 papers)

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Research

9 pages, 2407 KiB  
Article
Ultra Narrow Dual-Band Perfect Absorber Based on a Dielectric−Dielectric−Metal Three-Layer Film Material
by Bin Liu, Pinghui Wu, Hongyang Zhu and Li Lv
Micromachines 2021, 12(12), 1552; https://0-doi-org.brum.beds.ac.uk/10.3390/mi12121552 - 12 Dec 2021
Cited by 2 | Viewed by 2496
Abstract
This paper proposes a perfect metamaterial absorber based on a dielectric−dielectric−metal structure, which realizes ultra-narrowband dual-band absorption in the near-infrared band. The maximum Q factor is 484. The physical mechanism that causes resonance is hybrid coupling between magnetic polaritons resonance and plasmon resonance. [...] Read more.
This paper proposes a perfect metamaterial absorber based on a dielectric−dielectric−metal structure, which realizes ultra-narrowband dual-band absorption in the near-infrared band. The maximum Q factor is 484. The physical mechanism that causes resonance is hybrid coupling between magnetic polaritons resonance and plasmon resonance. At the same time, the research results show that the intensity of magnetic polaritons resonance is much greater than the intensity of the plasmon resonance. By changing the structural parameters and the incident angle of the light source, it is proven that the absorber is tunable, and the working angle tolerance is 15°. In addition, the sensitivity and figure of merit when used as a refractive index sensor are also analyzed. This design provides a new idea for the design of high-Q optical devices, which can be applied to photon detection, spectral sensing, and other high-Q multispectral fields. Full article
(This article belongs to the Special Issue Electronic and Optoelectronic Devices Based on 2D Materials)
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10 pages, 39661 KiB  
Article
Preparation and Research of Monolayer WS2 FETs Encapsulated by h-BN Material
by Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang and Kun Yang
Micromachines 2021, 12(9), 1006; https://0-doi-org.brum.beds.ac.uk/10.3390/mi12091006 - 24 Aug 2021
Cited by 5 | Viewed by 2115
Abstract
Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS2/h-BN vertical vdWs heterostructure [...] Read more.
Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS2/h-BN vertical vdWs heterostructure material can be synthesized by chemical vapor deposition (CVD) and wet transfer methods. Monolayer WS2 material and WS2/h-BN vertical vdWs heterostructure material can be tested and characterized using XPS, SEM, EDS, AFM and Raman spectroscopy, which can prove the existence of corresponding materials. When the thickness of the material decreases, the Coulomb scattering amongst two-dimensional (2D) layered materials increases. This is because both the shielding effect and the distance between the channel and the interface layer decrease. FET devices are then fabricated on WS2/h-BN vdWs heterostructure material by the electron beam lithography and evaporation processes. The effects of vdWs epitaxy on electrical transmission when WS2/h-BN vdWs heterostructure material is formed are explored. Finally, the related electrical performance of FET devices is tested and analyzed. Our experimental research provides guidance for the use of electronic devices with vdWs heterostructure material. Full article
(This article belongs to the Special Issue Electronic and Optoelectronic Devices Based on 2D Materials)
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