GaN Materials and Devices

Dear Colleagues,

GaN-based materials are unique semiconductors with direct bandgaps and have lots of advantages in many applications, including electronic and opto-electronic devices. As the optoelectronic devices, the GaN-based emitters cover a wide spectral range from deep UV to near-infrared, exhibiting broad applications, including light emitting diodes (LEDs), micro-LEDs, laser diodes (LDs), vertical-cavity surface emitting lasers (VCSELs), visible light communications, etc. The invention of GaN-based LEDs for bright and energy-saving solid-state lighting was awarded the Nobel Prize in Physics in 2014. GaN electronic devices have also been widely explored as high-frequency and high-power devices used in electric vehicles and other applications. Many efforts have been devoted to address the quality issue of GaN-based materials and device structures. Lots of new methods and novel device structures have developed to improve the performance of GaN-based devices. Accordingly, this Special Issue seeks to showcase research papers, communications, and review articles that focus on: (1) the growth of GaN-based materials and devices by MOCVD, MBE, or other synthesis methods; (2) studies about the defects in GaN-based materials and devices; (3) LEDs, LDs, and VCSELs with improved efficiency from UV to green emission wavelengths; (4) GaN-based power devices with improved electrical characteristics; and (5) novel applications of GaN-based devices.

Dr. Jie Song
Guest Editor

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• GaN
• epitaxy
• power devices
• LEDs
• micro-LEDs
• laser diodes
• transmission electron microscopy
• X-ray diffraction
• photoluminescence
• cathodoluminescence
• metalorganic chemical vapor deposition
• molecular beam epitaxy