Frontiers in Transistor and Memristor Based Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: closed (30 June 2022) | Viewed by 2592

Special Issue Editors


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Guest Editor
School of Advanced Technology, Xi'an Jiaotong–Liverpool University, Suzhou 21500, China
Interests: third/fourth-generation novel semiconductors; wide bandgap metal oxide; advanced synaptic electronic devices and their artificial intelligence applications (AI-integrated circuit); wearable electronics with integration of bio-sensors and TENG
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Science, Suzhou 215123, China
Interests: electrical and electronics engineering

Special Issue Information

Dear Colleagues, 

The current development of the internet of things (IoT), artificial intelligence (AI), and wearable systems provide a higher requirement for electronic devices with the outstanding ability to process massive amounts of data. Devices based on transistors and memristors have received extensive attention due to their fast processing speed, low energy consumption, and excellent compatibility for computer architecture. With the discovery and application of advanced materials such as nanoscale oxides with high carrier mobility, organic biomass with good degradability, photosensitive perovskites with high optical sensitivity efficiency, and low-dimensional nanomaterials with flexible bandgap modulation, the cutting-edge device performance of transistor- and memristor-based devices has been revealed (e.g., artificial synaptic performance and in-memory computing performance). One of the typical examples is static pattern recognition in handwritten Arabic numbers based on the photo-induced artificial synaptic long-term potentiation and depression response of transistors and memristors. These superiorities indicate that it is worth exploring bionic neural network systems based on these emerging transistor and memristor devices with advanced materials. Besides, the unique characteristics of various materials are dominating factors affecting the performance of film devices like transistors and memristors, which often have a great relationship with thin-film fabrication methods such as laser-focused atomic deposition, chemical vapor deposition, solution-processable spin-coating, and sputtering. Therefore, this Special Issue seeks to showcase research papers and review articles that focus on the emerging artificial intelligence applications of transistor- and memristor-based devices with emerging or advanced nanomaterials. 

We look forward to receiving your submissions!

Prof. Dr. Chun Zhao
Dr. Zongjie Shen
Guest Editors

Manuscript Submission Information

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Keywords

  • internet of things
  • artificial intelligence
  • transistor
  • memristor
  • nanoscale oxides
  • photosensitive perovskites
  • organic biomass
  • low-dimensional nanomaterials
  • artificial synaptic performance
  • in-memory computing
  • pattern recognition
  • long-term potentiation

Published Papers (1 paper)

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Research

15 pages, 2831 KiB  
Article
Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling
by Konstantin O. Petrosyants, Denis S. Silkin and Dmitriy A. Popov
Micromachines 2022, 13(8), 1293; https://0-doi-org.brum.beds.ac.uk/10.3390/mi13081293 - 11 Aug 2022
Cited by 3 | Viewed by 2109
Abstract
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm [...] Read more.
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, Ioff, SS, Vth, and maximal device temperature Tmax was discussed to achieve the optimum VLSI characteristics. Full article
(This article belongs to the Special Issue Frontiers in Transistor and Memristor Based Devices)
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