Etching for Semiconductor Nanofabrication
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: closed (15 September 2021) | Viewed by 11846
Special Issue Editor
Interests: electrochemistry; surface chemistry; wet-chemical etching; metal deposition
Special Issue Information
Dear Colleagues,
Over the recent decades, the semiconductor industry has managed to increase chip performance at an impressive and steady rate by scaling the dimensions of all parts of the integrated devices (transistors, metallization, dielectrics). To enable this, the controlled and selective removal of a wide range of materials (e.g., metals, semiconductors, high and low-k, polymers) is essential. Depending on the application, requirements, and specifications of the electronic device process integration flow, either ‘dry’ or ‘wet’ processes are used, both of which have their strengths (e.g., (tunable) selectivity of removal, circumventing corrosion issues, compatibility with other materials, surface roughness control, impact surface (electro)chemistry). In many cases, material properties are (becoming) a bottleneck for the manufacturing of more performant chips. Therefore, the control, reproducibility, and understanding of etching processes at the nanometer scale is of paramount importance. This Special Issue aims to provide an overview of the state-of-the-art in etching process development and research to enable future advanced technologies.
We look forward to receiving your submissions!
Dr. Harold Philipsen
Guest Editor
Manuscript Submission Information
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Keywords
- metals
- semiconductors
- etching
- surface (electro)chemistry