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Self-Assembled Materials and Bottom-Up Fabrication

A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: closed (31 January 2022) | Viewed by 4158

Special Issue Editor


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Guest Editor
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Interests: materials for nanoelectronics; patterning materials; dielectrics; metals; area selective deposition; thin films; self-assembled monolayers; ALD; CVD; PVD; lithography; photoresist; directed self-assembly; colloids and nanoparticles
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Special Issue Information

Dear Colleagues,

The development of science and technology of advanced materials using nanoscale units can be conducted by a novel concept involving a combination of nanotechnology methodology with various research disciplines, especially supramolecular chemistry. The novel concept is called ‘nanoarchitectonics’, where self-assembly processes are crucial in many cases involving a wide range of component materials. Self-assembled materials include variously structured objects including molecular machines, molecular receptors, molecular pliers, molecular rotors, nanoparticles, nanosheets, nanotubes, nanowires, nanoflakes, nanocubes, nanodisks, nanoring, block copolymers, hyperbranched polymers, supramolecular polymers, supramolecular gels, liquid crystals, Langmuir monolayers, Langmuir–Blodgett films, self-assembled monolayers, thin films, layer-by-layer structures, breath figure motif structures, two-dimensional molecular patterns, fullerene crystals, metal–organic frameworks, coordination polymers, coordination capsules, porous carbon spheres, mesoporous materials, polynuclear catalysts, DNA origamis, transmembrane channels, peptide conjugates, and vesicles, as well as functional materials for sensing, surface-enhanced Raman spectroscopy, photovoltaics, charge transport, excitation energy transfer, light-harvesting, photocatalysts, field effect transistors, logic gates, organic semiconductors, thin-film-based devices, drug delivery, cell culture, supramolecular differentiation, molecular recognition, molecular tuning, and hand-operating (hand-operated) nanotechnology. Self-assembly is a crucial component in the bottom–up fabrication of hierarchical supramolecular structures and advanced functional materials for various applications, from catalysis, energy harvesting and storage to nanoelectronics, photonics, biomedical, etc., which are the focus of this Special Issue.

Dr. Silvia Armini
Guest Editor

Manuscript Submission Information

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Keywords

  • Bottom–up deposition
  • Self-assembly
  • Self-assembled monolayers
  • Material engineering
  • Catalysis
  • Energy harvesting
  • Biomedicine
  • Nanoelectronics
  • Photonics
  • Porous materials
  • Nanoparticles

Published Papers (1 paper)

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Research

11 pages, 2794 KiB  
Article
Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption
by Yi-Cheng Li, Kun Cao, Yu-Xiao Lan, Jing-Ming Zhang, Miao Gong, Yan-Wei Wen, Bin Shan and Rong Chen
Molecules 2021, 26(10), 3056; https://0-doi-org.brum.beds.ac.uk/10.3390/molecules26103056 - 20 May 2021
Cited by 7 | Viewed by 3697
Abstract
Manganese oxide (MnOx) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnOx films can be [...] Read more.
Manganese oxide (MnOx) shows great potential in the areas of nano-electronics, magnetic devices and so on. Since the characteristics of precise thickness control at the atomic level and self-align lateral patterning, area-selective deposition (ASD) of the MnOx films can be used in some key steps of nanomanufacturing. In this work, MnOx films are deposited on Pt, Cu and SiO2 substrates using Mn(EtCp)2 and H2O over a temperature range of 80–215 °C. Inherently area-selective atomic layer deposition (ALD) of MnOx is successfully achieved on metal/SiO2 patterns. The selectivity improves with increasing deposition temperature within the ALD window. Moreover, it is demonstrated that with the decrease of electronegativity differences between M (M = Si, Cu and Pt) and O, the chemisorption energy barrier decreases, which affects the initial nucleation rate. The inherent ASD aroused by the electronegativity differences shows a possible method for further development and prediction of ASD processes. Full article
(This article belongs to the Special Issue Self-Assembled Materials and Bottom-Up Fabrication)
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