High-Quality Hexagonal Boron Nitride Nanosheets for Electronics and Energy Applications
A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Materials Chemistry".
Deadline for manuscript submissions: closed (15 October 2022) | Viewed by 430
Special Issue Editor
Interests: hexagonal boron nitride (h-BN); graphene; transition metal dichalcogenides (TMDs); CVD synthesis; electronic and optoelectronic applications
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Two-dimensional (2D) hexagonal boron nitride, consisting of alternating sp2-bonded boron and nitrogen atoms arranged in a honeycomb lattice within a plane, is an insulator with an indirect bandgap of ~6 eV and has excellent properties such as high mechanical strength and high thermal conductivity and stability. Recently, 2D h-BN film has widely been used as the dielectric layer in electronic devices, such as field-effect transistors (FETs), due to its atomically flat surface, which is free of dangling bonds and charged impurities. Besides, h-BN also has promising applications in near-field imaging, deep-UV emitters and detectors, and quantum optoelectronics.
This Special Issue will provide a platform for materials science articles with an emphasis on h-BN material preparation, functionalization, and characterization. Articles concerning the physical properties of h-BN or the applications of this material are also welcome. The ultimate goal is to collect all the recent advancements in research in the field and focus on highlighting the fundamental science questions and exploring new applications.
Dr. Lifeng Wang
Guest Editor
Manuscript Submission Information
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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- Hexagonal boron nitride (h-BN)
- Large-sized single crystals and films
- Chemical vapor deposition (CVD)
- Dielectric layer
- Field-effect transistors
- Electronic devices
