Dear colleagues,

Two-dimensional material are currently gaining increasing interest in electronics/optoelectronics, as they allow us to extend the performance of traditional semiconductor devices or to demonstrate completely new device concepts and exciting physics.

Field effect transistors based on 2D semiconductors such as transition metal dichalcogenides (MoS2, WSe2, MoTe2, etc.) can have high speed and low power consumption compared to those with conventional dimensional semiconductors, and the ability to scale down to the nanoscale. In addition, 2D materials can respond to broadband light, electromagnetic wave, magnetic field, thermal and mechanical stress, and sense various chemicals, gases, and biomolecules. They also have the ability to adapt to different flexible and stretchable substrates, leading to numerous applications across noncomputing components, sensors, human–machine interfaces, wireless communication modules, and other passive devices. However, such promising applications will only be possible with much research effort at all levels. Two-dimensional material are promising material to address the current the challenge of dimension reduction.

For this Special Issue, we welcome the submission of original research articles, communications, and reviews on recent advances in graphene and/or novel 2D materials and the electronic devices, and applications that use them.

Dr. Atiye Pezeshki
Guest Editor

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• Graphene
• Transition metal dichalcogenides
• Field effect transistor
• Magnetoresistance
• Complementary inverter