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III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices

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A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 July 2022) | Viewed by 21821

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Special Issue Editors

Prof. Dr. Joon Seop Kwak

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Guest Editor

Korea Institute of Energy Technology, Sunchon 57922, Korea
Interests: micro/nano light emitters; fabrication of micro/nanostructured LEDs for EV and AR/VR; fabrication of GaN-based laser diode; III-V power semiconductor devices; 3D structured wide-bandgap power devices; flexible AlGaN/GaN power transistors; novel process; electron-beam irradiation on ultrathin films; damage-free sputtering of TCO (ITO etc) and TOS (InGaZnO etc) films

Dr. Jae-Hyun Ryou

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Guest Editor

Department of Mechanical Engineering,Cullen College of Engineering, University of Houston, 4726 Calhoun Rd, Rm N207, Houston, TX 77204-4006, USA
Interests: materials science and engineering; semiconductor materials; photonic/electronic devices; light-emitting diodes and laser diodes; photovoltaic solar cells; energy devices

Special Issue Information

Dear Colleagues,

Group III-nitride compound semiconductor materials are potential candidates for the development of ultraviolet to visible spectra optoelectronic (e.g., LEDs, laser diodes, detectors, sensors, and modulators) and electronic (e.g., FETs, TFTs, and HEMTs) devices. Recently, the leading-edge device technologies are changing from big-sized to nano-sized with increasing the demand of portable and mobile electronic devices. To enhance the device performances, several approaches have been verified for addressing the material growth and fabrication challenges by using nanostructures (e.g., nanowires, nanopillar, nanorods, and quantum dots) and nanofabrication (e.g., photonic crystals, surface-plasmons, surface roughening, epitaxial lateral overgrowth, substrate patterning, and nanogratings). The development in nanomaterials and nanofabrication technologies can further improve the performances of devices.

The aim of this Special Issue is to publish original research presenting very latest developments at the advancements in III-N based nanoscale device fabrication technology leading to the next generation Photonics and electronic devices for all kinds of applications. It is predicted that this will cover a wide range of ultraviolet to visible spectra region optoelectronic and electronic devices.

Prof. Dr. Joon Seop Kwak
Dr. Jae-Hyun Ryou
Guest Editors

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Keywords

Nano-/micro-structured III-N semiconductor devices
III-N semiconductor photonic structures and devices
III-N semiconductor nanomaterials: properties and characterization
Light emitters (LEDs, LDs, and etc.)
Power electronic devices
Nano/microfabrication
Nanostructured sensors and modulators

Published Papers (12 papers)

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Research

14 pages, 2410 KiB

Open AccessFeature PaperArticle

Thermodynamic Analysis of Group-III-Nitride Alloying with Yttrium by Hybrid Chemical Vapor Deposition

by Mina Moradnia, Sara Pouladi, Muhammad Aqib and Jae-Hyun Ryou

Nanomaterials 2022, 12(22), 4053; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12224053 - 17 Nov 2022

Cited by 1 | Viewed by 1202

Abstract

Group-IIIb-transition-metal-alloyed wurtzite Group-IIIa-nitride (IIIb-IIIa-N) thin films have higher piezoelectric characteristics than binary IIIa-N for a broad range of applications in photonic, electronic, sensing, and energy harvesting systems. We perform theoretical thermodynamic analysis for the deposition and epitaxial growth of Y-alloyed GaN and AlN films by a newly introduced growth technique of hybrid chemical vapor deposition (HybCVD), which can overcome the limitations of the conventional techniques. We investigate the equilibrium vapor pressures in the source zones to determine the dominant precursors of cations for the input of the mixing zone. Then, we study the driving force for the vapor-solid phase reactions of cation precursors in the growth zone to calculate the relationship between the solid composition of Y_xGa_1−xN and Y_xAl_1−xN and the relative amount of input precursors (Y vs. GaCl and AlCl₃) in different deposition conditions, such as temperature, V/III precursor input ratio, and H₂/inert-gas mixture ratio in the carrier gas. The x_Y composition in YAlN changes nearly linearly with the input ratio of cation precursors regardless of the growth conditions. However, YGaN composition changes non-linearly and is also substantially affected by the conditions. The thermodynamic analysis provides insight into the chemistry involved in the epitaxial growth of IIIa-IIIb-N by the HybCVD, as well as the information for suitable growth conditions, which will guide the way for ongoing experimental efforts on the improvement of piezoelectricity of the lead-free piezoelectric materials. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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13 pages, 5265 KiB

Open AccessFeature PaperArticle

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD

by Alica Rosová, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann and Ján Kuzmík

Nanomaterials 2022, 12(19), 3496; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12193496 - 06 Oct 2022

Viewed by 1268

Abstract

In(Ga)N epitaxial layers were grown on on-axis and off-axis (0001) sapphire substrates with an about 1100 nm-thick GaN buffer layer stack using organometallic chemical vapor deposition at 600 °C. The In(Ga)N layers consisted of a thin (~10–25 nm) continuous layer of small conical pyramids in which large conical pyramids with an approximate height of 50–80 nm were randomly distributed. The large pyramids were grown above the edge-type dislocations which originated in the GaN buffer; the dislocations did not penetrate the large, isolated pyramids. The large pyramids were well crystallized and relaxed with a small quantity of defects, such as dislocations, preferentially located at the contact zones of adjacent pyramids. The low temperature (6.5 K) photoluminescence spectra showed one clear maximum at 853 meV with a full width at half maximum (FWHM) of 75 meV and 859 meV with a FWHM of 80 meV for the off-axis and on-axis samples, respectively. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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10 pages, 2246 KiB

Open AccessArticle

Unexpectedly Simultaneous Increase in Wavelength and Output Power of Yellow LEDs Based on Staggered Quantum Wells by TMIn Flux Modulation

by Zhenxing Lv, Xiaoyu Zhao, Yuechang Sun, Guoyi Tao, Peng Du and Shengjun Zhou

Nanomaterials 2022, 12(19), 3378; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12193378 - 27 Sep 2022

Cited by 3 | Viewed by 1241

Abstract

Pursuing efficient long-wavelength InGaN LED has been a troublesome issue to be solved, which forms interesting subjects for fundamental research, but finds also motivation in extensive applications. Here, we investigate the effect of TMIn (trimethylindium) flux variation for growing bandgap-engineered staggered quantum wells (QWs) on corresponding LED properties and demonstrate the unexpectedly simultaneous increase in light output power (LOP) and emission wavelength. At 20 mA, LEDs based on staggered QWs grown under low flux show an increase of 28% in LOP and longer wavelength compared to that under high flux. The experimental results reveal that TMIn flux affects crystalline quality and indium composition of epilayers. Under high TMIn flux, high in-plane strain exists between adjacent layers, accompanied by the composition pulling effect, which reduces indium incorporation for the following staggered QW growth and hinders realization of yellow light emission. According to simulation results, low-flux-grown staggered QWs contribute to increased carrier wavefunction overlap as well as enhanced electric field. Notably, the former enables high LOP, while the latter results in emissions towards long wavelength, promising to solve an ever-present concern that LED performance deteriorates with increasing emission wavelength. Therefore, this work shows great significance in thoroughly understanding growth conditions for bandgap-engineered staggered QW structures, which offers a facile solution to achieve efficient long-wavelength optoelectronics devices. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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8 pages, 1634 KiB

Open AccessEditor’s ChoiceArticle

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors

by Yujie Huang, Jing Yang, Degang Zhao, Yuheng Zhang, Zongshun Liu, Feng Liang and Ping Chen

Nanomaterials 2022, 12(18), 3148; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12183148 - 11 Sep 2022

Cited by 9 | Viewed by 1427

Abstract

The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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11 pages, 7111 KiB

Open AccessArticle

Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells

by Yachen Wang, Feng Liang, Degang Zhao, Yuhao Ben, Jing Yang, Zongshun Liu and Ping Chen

Nanomaterials 2022, 12(18), 3114; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12183114 - 08 Sep 2022

Cited by 2 | Viewed by 1378

Abstract

In this paper, the photoluminescence (PL) properties and surface morphology of InGaN/GaN multiple quantum well (MQW) structures with the hydrogen (H₂) heat treatment of InGaN are investigated to elucidate the effect of hydrogen on the structure and surface of the MQWs. The experimental results show that the H₂ heat treatment on the as-grown MQWs may lead to the decomposition of InGaN and the formation of inhomogeneous In clusters. The atomic force microscope (AFM) study indicates that although the surface roughness of the uncapped samples increases after H₂ treatment, the V-defects are suppressed. Moreover, the luminescence efficiency of the MQWs can be effectively improved by growing a GaN cap layer with an appropriate thickness on the top of the MQWs, which can reduce the effects of the H₂ atmosphere and high temperature on the MQWs. In addition, a morphologic transformation from step bunching to shallow steps occurs and a much smoother surface can be obtained when a thicker cap layer is adopted. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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9 pages, 2142 KiB

Open AccessArticle

Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers

by Zhenyu Chen, Feng Liang, Degang Zhao, Jing Yang, Ping Chen and Desheng Jiang

Nanomaterials 2022, 12(15), 2581; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12152581 - 27 Jul 2022

Viewed by 1515

Abstract

Potential barriers between the waveguide layer and MQW active region may influence injection efficiency significantly, which is important in improving output characteristics of GaN-based green laser diodes (LDs). In this study, potential barriers and injection efficiency of LDs are investigated by simulation methods. It is found that different indium content in quantum barrier layers results in different potential barrier heights, leading to different recombination rates in upper and lower waveguide layers, and the injection efficiency can be modulated effectively. An eclectic choice of indium content can suppress recombination in two waveguide layers, improving the output characteristics of green LDs. Additionally, a composite lower waveguide layer structure is proposed to reduce the negative effect of potential barriers. High output power and low threshold current are achieved owing to the reduction in electron injection blockage and hole leakage effects. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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11 pages, 1833 KiB

Open AccessArticle

Temperature Dependence of Electron Leakage Current in InGaN Blue Light-Emitting Diode Structures

by Chibuzo Onwukaeme, Bohae Lee and Han-Youl Ryu

Nanomaterials 2022, 12(14), 2405; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12142405 - 14 Jul 2022

Cited by 5 | Viewed by 1753

Abstract

We investigated the temperature dependence of the electron leakage current in the AlGaN electron-blocking layer (EBL) of an InGaN/GaN blue light-emitting diode (LED) structure at temperatures between 20 and 100 °C. The percentage of electron leakage current was experimentally determined by fitting the measured external quantum efficiency of an LED using the ABC recombination model. The electron leakage current decreased significantly as the temperature increased from 20 to 100 °C. The experiment obtained temperature-dependent electron leakage current was also found to agree well with the simulation results. This counter-intuitive temperature dependence of the electron leakage current resulted from an increase in potential barrier for electrons with increasing temperature due to the increased ionized acceptor concentration in the EBL with temperature. Moreover, the results obtained for the temperature-dependent electron leakage were consistent with the thermionic emission model. The results of the temperature dependence reported here are expected to provide insight into the thermal droop of GaN-based LEDs. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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11 pages, 4863 KiB

Open AccessArticle

Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors

by Tae Kyoung Kim, Abu Bashar Mohammad Hamidul Islam, Yu-Jung Cha, Seung Hyun Oh and Joon Seop Kwak

Nanomaterials 2022, 12(8), 1342; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12081342 - 13 Apr 2022

Viewed by 2019

Abstract

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) and describes the sidewall light emission characteristics for the application of backlight units in display technology. The USE-LEDs are fabricated with top (ITO/distributed Bragg reflector) and bottom (Ag) mirrors that cause light emission from the four sidewalls in a lateral direction. The effect of light output power (LOP) on lateral direction is consistently investigated for improving the optoelectronic performances of USE-LEDs. Initially, the reference USE-LED suffers from very low LOP because of poor light extraction efficiency (LEE). Therefore, the LEE is improved by fabricating ZnO nanorods at each sidewall through hydrothermal method. The effects of ZnO nanorod lengths and diameters on LOP are systematically investigated for optimizing the dimensions of ZnO nanorods. The optimized ZnO nanorods improve the LEE of USE-LED, which thus results in increasing the LOP > 80% compared to the reference LED. In addition, the light-tools simulator is also used for elucidating the increase in LEE of ZnO nanorods USE-LED. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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8 pages, 21608 KiB

Open AccessArticle

High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer

by Ki-Sik Im, Siva Pratap Reddy Mallem, Jin-Seok Choi, Young-Min Hwang, Jae-Seung Roh, Sung-Jin An and Jae-Hoon Lee

Nanomaterials 2022, 12(4), 643; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12040643 - 14 Feb 2022

Cited by 1 | Viewed by 1780

Abstract

We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional device without an in situ cap layer. The pulse characteristics and noise behaviors for two devices with in situ cap layers are much superior to those of the reference device without a cap layer, which means that the in situ cap layer effectively passivates the AlGaN surface. On the other hand, the device with an in situ SiCN cap layer showed the excellent device characteristics and noise performances compared to the other devices because of the reduced positive ionic charges and enhanced surface morphology caused by carbon (C) surfactant atoms during the growth of the SiCN cap layer. These results indicate that the AlGaN/GaN HEMT with the in situ SiCN cap layer is very promising for the next high-power device by replacing the conventional HEMT. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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7 pages, 2483 KiB

Open AccessArticle

Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure

by Xiaoyu Zhao, Zehong Wan, Liyan Gong, Guoyi Tao and Shengjun Zhou

Nanomaterials 2021, 11(12), 3231; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11123231 - 28 Nov 2021

Cited by 12 | Viewed by 2334

Abstract

InGaN-based long-wavelength light-emitting diodes (LEDs) are indispensable components for the next-generation solid-state lighting industry. In this work, we introduce additional InGaN/GaN pre-wells in LED structure and investigate the influence on optoelectronic properties of yellow (~575 nm) LEDs. It is found that yellow LED with pre-wells exhibits a smaller blue shift, and a 2.2-fold increase in light output power and stronger photoluminescence (PL) intensity compared to yellow LED without pre-wells. The underlying mechanism is revealed by using Raman spectra, temperature-dependent PL, and X-ray diffraction. Benefiting from the pre-well structure, in-plane compressive stress is reduced, which effectively suppresses the quantum confined stark effect. Furthermore, the increased quantum efficiency is also related to deeper localized states with reduced non-radiative centers forming in multiple quantum wells grown on pre-wells. Our work demonstrates a comprehensive understanding of a pre-well structure for obtaining efficient LEDs towards long wavelengths. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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12 pages, 3462 KiB

Open AccessArticle

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

by Tae Kyoung Kim, Abu Bashar Mohammad Hamidul Islam, Yu-Jung Cha and Joon Seop Kwak

Nanomaterials 2021, 11(11), 3045; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11113045 - 12 Nov 2021

Cited by 5 | Viewed by 2327

Abstract

This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power μ-LED-on-HEMT arrays that consist of 32 × 32 pixelated μ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the μ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are −4.6 V, <~1.1 × 10⁻⁹ A at gate-to-source voltage (V_GS) = −10 V, and 21 mA at V_GS = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of μ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated μ-LED-on-HEMT arrays increases from 0 to ~4 mW as the V_GS increases from −6 to 4 V at V_DD = 10 V. Each pixel of the integrated μ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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11 pages, 5740 KiB

Open AccessArticle

A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication

by Jianya Zhang, Min Jiang, Lifeng Bian, Dongmin Wu, Hua Qin, Wenxian Yang, Yukun Zhao, Yuanyuan Wu, Min Zhou and Shulong Lu

Nanomaterials 2021, 11(11), 2959; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11112959 - 04 Nov 2021

Cited by 12 | Viewed by 2165

Abstract

Underwater wireless optical communication (UWOC) is a wireless communication technology using visible light to transmit data in an underwater environment, which has wide applications. Based on lift-off (In,Ga)N nanowires, this work has proposed and successfully demonstrated a self-powered photoelectrochemical (PEC) photodetector (PD) with excellent transmissivity. The transparent functionality of the PD is critical for 360° omnidirectional underwater detection, which was realized by detaching the (In,Ga)N nanowires from the opaque epitaxial substrates to the indium tin oxide (ITO)/glass. It was also found that the insulating SiO₂ layer can enhance the photocurrent by about 12 times. The core–shell structure of the nanowires is beneficial for generating carriers and contributing to the photocurrent. Furthermore, a communication system with ASCII code is set to demonstrate the PD detection in underwater communication. This work paves an effective way to develop 360° omnidirectional PDs for the wide applications in UWOC system and underwater photodetection. Full article

(This article belongs to the Special Issue III-N Based Semiconductor Nanomaterials for Photonic and Electronic Devices)

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