Nanomaterials Based on IV-Group Semiconductors and Metals

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 9272

Special Issue Editors


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Guest Editor
URT LAB SENS, Beyond Nano—CNR, c/o Department of Chemical, Biological, Pharmaceutical and Environmental Sciences, University of Messina, Viale Ferdinando Stagno d’Alcontres 5, 98166 Messina, Italy
Interests: nanomaterials; Si nanostructures; luminescence; sensors
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Physics and Astronomy “E. Majorana”, University of Catania, 95123 Catania, Italy
Interests: nanowires; nanostructures; 2D materials; optoelectronics; microelectronics; sensors; fractals
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The new composites and nanostructures of group IV materials and metals provide a platform for advanced devices for nanoelectronics, photonics, and sensors. This Special Issue will focus on aspects of nanotechnology associated with different types of nanomaterials. Different issues relevant to low-dimensional structures, such as nanowires, nanocrystals, and nanopores, are potential topics. This issue includes fabrication such as lithography, material processing, physical approaches, chemical etching, nanoparticle formation, and different routes for nanofabrication. Photonic devices as detectors, light-emitting sources, waveguides, and optical modulators are included.

Moreover, defect characterization, engineering, and the impact of crystal quality on the properties of electronic and photonic devices are topics of this issue. Another point is the application of nanomaterials in the field of biological and chemical sensing and their impact on sensing performances.

This Special Issue of Nanomaterials will attempt to cover the most recent advances in group IV and metal nanostructures from synthesis and characterization to photonics, nanoelectronics, and sensor applications.

Potential topics include but are not limited to:

  • Fabrication and characterization of several nanostructures, nanodevices, and nanosensors;
  • Nanowire, nanorod, and nanocluster synthesis and characterization;
  • Carrier transport in nanodevices;
  • Optoelectronic materials and nanodevices using Si-based heterostructures and different types of nanostructures;
  • Defect characterization and engineering;
  • Integration of photonics with Si CMOS technology;
  • Strain band-gap engineering and carrier transport in CMOS;
  • Si-based waveguide technology and nanodevice­s;
  • Light-emitting devices, detectors, waveguides, optical modulators;
  • Luminescence in nanostructure-based materials;
  • Integrated waveguide sensing;
  • Nanomaterials for life science applications;
  • Nanoscale biosensors;
  • Rare earth doping of Si nanostructures;
  • Surface enhancement Raman;
  • Plasmonic effect;
  • Antibacterial nanomaterial platform;
  • Environmental sensing.

Dr. Alessia Irrera
Dr. Antonio Alessio Leonardi
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (4 papers)

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Research

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11 pages, 3574 KiB  
Article
Optimization and Characterization of Electrodeposited Cadmium Selenide on Monocrystalline Silicon
by Walter Giurlani, Martina Vizza, Antonio Alessio Leonardi, Maria Josè Lo Faro, Alessia Irrera and Massimo Innocenti
Nanomaterials 2022, 12(4), 610; https://doi.org/10.3390/nano12040610 - 11 Feb 2022
Cited by 4 | Viewed by 1696
Abstract
In this work, the optimal conditions for the electrodeposition of a CdSe film on n-Si were demonstrated. The structural and optical properties of the bare films and after annealing were studied. In particular, the crystallinity and photoluminescence of the samples were evaluated, and [...] Read more.
In this work, the optimal conditions for the electrodeposition of a CdSe film on n-Si were demonstrated. The structural and optical properties of the bare films and after annealing were studied. In particular, the crystallinity and photoluminescence of the samples were evaluated, and after annealing at 400 °C under a nitrogen atmosphere, a PL increase by almost an order of magnitude was observed. This paper opens the route towards the use of electrochemical deposition as a cost-effective and easy fabrication approach that can be used to integrate other interesting materials in the silicon-manufacturing processes for the realization of optoelectronic devices. Full article
(This article belongs to the Special Issue Nanomaterials Based on IV-Group Semiconductors and Metals)
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8 pages, 2835 KiB  
Article
Carbon-Free Solution-Based Doping for Silicon
by Sebastiano Caccamo and Rosaria Anna Puglisi
Nanomaterials 2021, 11(8), 2006; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11082006 - 05 Aug 2021
Cited by 2 | Viewed by 1865
Abstract
Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar or structured. So [...] Read more.
Molecular doping is a method to dope semiconductors based on the use of liquid solutions as precursors of the dopant. The molecules are deposited on the material, forming a self-ordered monolayer that conforms to the surfaces, whether they are planar or structured. So far, molecular doping has been used with precursors of organic molecules, which also release the carbon in the semiconductor. The carbon atoms, acting as traps for charge carriers, deteriorate the doping efficiency. For rapid and extensive industrial exploitation, the need for a method that removes carbon has therefore been raised. In this paper, we use phosphoric acid as a precursor of the dopant. It does not contain carbon and has a smaller steric footprint than the molecules used in the literature, thus allowing a much higher predetermined surface density. We demonstrate doses of electrical carriers as high as 3 × 1015 #/cm2, with peaks of 1 × 1020 #/cm3, and high repeatability of the process, indicating an outstanding yield compared to traditional MD methods. Full article
(This article belongs to the Special Issue Nanomaterials Based on IV-Group Semiconductors and Metals)
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13 pages, 2153 KiB  
Article
Ultrathin Silicon Nanowires for Optical and Electrical Nitrogen Dioxide Detection
by Dario Morganti, Antonio Alessio Leonardi, Maria José Lo Faro, Gianluca Leonardi, Gabriele Salvato, Barbara Fazio, Paolo Musumeci, Patrizia Livreri, Sabrina Conoci, Giovanni Neri and Alessia Irrera
Nanomaterials 2021, 11(7), 1767; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11071767 - 07 Jul 2021
Cited by 12 | Viewed by 2655
Abstract
The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-microelectronic compatible materials and processing approaches. In this paper, the [...] Read more.
The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-microelectronic compatible materials and processing approaches. In this paper, the realization of a cost-effective sensor based on ultrathin silicon nanowires (Si NWs) for the detection of nitrogen dioxide (NO2) is reported. A modification of the metal-assisted chemical etching method allows light-emitting silicon nanowires to be obtained through a fast, low-cost, and industrially compatible approach. NO2 is a well-known dangerous gas that, even with a small concentration of 3 ppm, represents a serious hazard for human health. We exploit the particular optical and electrical properties of these Si NWs to reveal low NO2 concentrations through their photoluminescence (PL) and resistance variations reaching 2 ppm of NO2. Indeed, these Si NWs offer a fast response and reversibility with both electrical and optical transductions. Despite the macro contacts affecting the electrical transduction, the sensing performances are of high interest for further developments. These promising performances coupled with the scalable Si NW synthesis could unfold opportunities for smaller sized and better performing sensors reaching the market for environmental monitoring. Full article
(This article belongs to the Special Issue Nanomaterials Based on IV-Group Semiconductors and Metals)
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Review

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20 pages, 2307 KiB  
Review
Fluorescent Biosensors Based on Silicon Nanowires
by Antonio Alessio Leonardi, Maria José Lo Faro, Barbara Fazio, Corrado Spinella, Sabrina Conoci, Patrizia Livreri and Alessia Irrera
Nanomaterials 2021, 11(11), 2970; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11112970 - 05 Nov 2021
Cited by 4 | Viewed by 2173
Abstract
Nanostructures are arising as novel biosensing platforms promising to surpass current performance in terms of sensitivity, selectivity, and affordability of standard approaches. However, for several nanosensors, the material and synthesis used make the industrial transfer of such technologies complex. Silicon nanowires (NWs) are [...] Read more.
Nanostructures are arising as novel biosensing platforms promising to surpass current performance in terms of sensitivity, selectivity, and affordability of standard approaches. However, for several nanosensors, the material and synthesis used make the industrial transfer of such technologies complex. Silicon nanowires (NWs) are compatible with Si-based flat architecture fabrication and arise as a hopeful solution to couple their interesting physical properties and surface-to-volume ratio to an easy commercial transfer. Among all the transduction methods, fluorescent probes and sensors emerge as some of the most used approaches thanks to their easy data interpretation, measure affordability, and real-time in situ analysis. In fluorescent sensors, Si NWs are employed as substrate and coupled with several fluorophores, NWs can be used as quenchers in stem-loop configuration, and have recently been used for direct fluorescent sensing. In this review, an overview on fluorescent sensors based on Si NWs is presented, analyzing the literature of the field and highlighting the advantages and drawbacks for each strategy. Full article
(This article belongs to the Special Issue Nanomaterials Based on IV-Group Semiconductors and Metals)
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