Materials for Sources and Detectors in the GIGA-TERA-MIR and NIR-IR Ranges

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: closed (31 December 2022) | Viewed by 6699

Special Issue Editor

Physics Department, Khalifa University of Science and Technology, Abu Dhabi, United Arab Emirates
Interests: semiconductor materials and optics; gigahertz, terahertz, and mid-infrared radiation (GIGA-TERA-MIR); (NIR-IR); quantum cascade lasers; dilute semiconductors; nitride, bismide and antimonide-based lasers; methods, materials, and devices for sensitive gas detection, water quality control, and metabolomics; GHz-THz frequency multiplication and controllable GHz-THz nonlinearities in semiconductor superlattices; THz metamaterials, nanoparticles for medical physics applications; sensors for CBRN detection and water quality monitoring
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Special Issue Information

Dear Colleagues,

Recent advances in sources and detectors in the TERA-MIR (0.3 THz to 10 THz) and mid-infrared (10 THz to 100 THz) fields have shown that there are a large number of applications in physics, electrical engineering and technology, applied chemistry, materials sciences, and medicine/biology that would benefit from spectroscopy and imaging with frequencies in both ranges. Even more recently, novel devices in the GIGA range from 0.1 THz to slightly below 0.3 THz, notably in medical diagnostics based on sensitive gas detection and imaging, have made a review of materials, sources, and detectors that can be used for the GIGA-TERA-MIR range as well as the NIR-IR range timely to help to identify common aspects within a synergetic approach. The main emphasis of this Special Issue will be on new fundamental material properties, concepts, and device designs that are likely to open the way for new products or the exploitation of new technologies in the fields of sensing, healthcare, biology, water quality control, and industrial applications. End users are research centers, academic institutions, and well-established and start-up companies and hospitals.

Prof. Dr. Mauro Fernandes Pereira
Guest Editor

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Keywords

  • TERA-MIR
  • GHz, THz, mid-infrared
  • NIR, IR
  • Quantum cascade lasers and interband cascade lasers
  • Dilute semiconductors
  • Frequency multiplication in superlattices
  • Heterodyne mixers
  • Photoacoustic detectors
  • Breath analysis
  • Water quality
  • Sensitive gas detection

Published Papers (5 papers)

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Research

11 pages, 4806 KiB  
Article
Impact of 3MeV Energy Proton Particles on Mid-IR QCLs
by Petrişor Gabriel Bleotu, Laura Mihai, Dan Sporea, Adelina Sporea, Mihai Straticiuc and Ion Burducea
Nanomaterials 2023, 13(4), 677; https://0-doi-org.brum.beds.ac.uk/10.3390/nano13040677 - 09 Feb 2023
Viewed by 1050
Abstract
This paper reports the results obtained for a distributed-feedback quantum cascade laser (DFB-QCL) exposed to different fluences of proton particles: 1014, 1015 and 1016 p/cm2. Dedicated laboratory setups were developed to assess the irradiation-induced changes in this [...] Read more.
This paper reports the results obtained for a distributed-feedback quantum cascade laser (DFB-QCL) exposed to different fluences of proton particles: 1014, 1015 and 1016 p/cm2. Dedicated laboratory setups were developed to assess the irradiation-induced changes in this device. Multiple parameters defining the QCL performances were investigated prior to and following each irradiation step: (i) voltage-driving current; (ii) emitted optical power-driving current; (iii) central emitting wavelength-driving current; (iv) emitted spectrum-driving current; (v) transversal mode structure-driving current, maintaining the system operating temperature at 20 °C. The QCL system presented, before irradiation, two emission peaks: a central emission peak and a side peak. After proton irradiation, the QCL presented a spectral shift, and the ratio between the two peaks also changed. Even though, after irradiation, the tunning spectral range was reduced, at the end of the tests, the system was still functional. Full article
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13 pages, 2965 KiB  
Article
Photon Drag Currents and Terahertz Generation in α-Sn/Ge Quantum Wells
by Binglei Zhang, Yi Luo, Yang Liu, Valerii N. Trukhin, Ilia A. Mustafin, Prokhor A. Alekseev, Bogdan R. Borodin, Ilya A. Eliseev, Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Anna Kusmartseva and Fedor V. Kusmartsev
Nanomaterials 2022, 12(17), 2892; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12172892 - 23 Aug 2022
Cited by 1 | Viewed by 1240
Abstract
We have fabricated α-Sn/Ge quantum well heterostructures by sandwiching nano-films of α-Sn between Ge nanolayers. The samples were grown via e-beam deposition and characterized by Raman spectroscopy, atomic force microscopy, temperature dependence of electrical resistivity and THz time-resolved spectroscopy. We have established the [...] Read more.
We have fabricated α-Sn/Ge quantum well heterostructures by sandwiching nano-films of α-Sn between Ge nanolayers. The samples were grown via e-beam deposition and characterized by Raman spectroscopy, atomic force microscopy, temperature dependence of electrical resistivity and THz time-resolved spectroscopy. We have established the presence of α-Sn phase in the polycrystalline layers together with a high electron mobility μ = 2500 ± 100 cm2 V−1 s−1. Here, the temperature behavior of the resistivity in a magnetic field is distinct from the semiconducting films and three-dimensional Dirac semimetals, which is consistent with the presence of linear two-dimensional electronic dispersion arising from the mutually inverted band structure at the α-Sn/Ge interface. As a result, the α-Sn/Ge interfaces of the quantum wells have topologically non-trivial electronic states. From THz time-resolved spectroscopy, we have discovered unusual photocurrent and THz radiation generation. The mechanisms for this process are significantly different from ambipolar diffusion currents that are responsible for THz generation in semiconducting thin films, e.g., Ge. Moreover, the THz generation in α-Sn/Ge quantum wells is almost an order of magnitude greater than that found in Ge. The substantial strength of the THz radiation emission and its polarization dependence may be explained by the photon drag current. The large amplitude of this current is a clear signature of the formation of conducting channels with high electron mobility, which are topologically protected. Full article
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8 pages, 1390 KiB  
Article
Harmonic Generation in Biased Semiconductor Superlattices
by Mauro Fernandes Pereira
Nanomaterials 2022, 12(9), 1504; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12091504 - 28 Apr 2022
Cited by 6 | Viewed by 1314
Abstract
Semiconductor superlattices are proven nanomaterials for THz nonlinear optics by means of high order harmonic generation. Seminal approaches leading to a perfectly antisymmetric current-voltage (I–V.) curve predict the generation of odd harmonics only in the absence of a bias. However, even harmonics at [...] Read more.
Semiconductor superlattices are proven nanomaterials for THz nonlinear optics by means of high order harmonic generation. Seminal approaches leading to a perfectly antisymmetric current-voltage (I–V.) curve predict the generation of odd harmonics only in the absence of a bias. However, even harmonics at high orders have been detected in several experiments. Their generation has been explained by considering deviations from the current flow symmetry that break the exact antisymmetry of the I–V. curve. In this paper, we focus on another issue found experimentally that has also not been explained, namely the harmonic power output asymmetry from negative to positive applied bias. Once more, breaking the I–V. flow symmetry explains the experiments and leads to a further tool to design the power output of these materials. Furthermore, a new approach for the Boltzmann Equation under relaxation-rate approximation eliminates numerical difficulties generated by a previous theory. This leads to very efficient analytical expressions that can be used for both fundamental physics/optics/material sciences and realistic device development and simulations. Full article
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8 pages, 2704 KiB  
Article
Combined Structural and Voltage Control of Giant Nonlinearities in Semiconductor Superlattices
by Mauro Fernandes Pereira and Apostolos Apostolakis
Nanomaterials 2021, 11(5), 1287; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11051287 - 13 May 2021
Cited by 5 | Viewed by 1575
Abstract
Recent studies have predicted a strong increase in high harmonic emission in unbiased semiconductor superlattices due to asymmetric current flow. In parallel, an external static bias has led to orders of magnitude control of high harmonics. Here, we study how this control can [...] Read more.
Recent studies have predicted a strong increase in high harmonic emission in unbiased semiconductor superlattices due to asymmetric current flow. In parallel, an external static bias has led to orders of magnitude control of high harmonics. Here, we study how this control can affect the operation of superlattice multipliers in a range of input frequencies and powers delivered by commercially available GHz sources. We show that the strongly nonlinear behavior can lead to a very complex scenario. Furthermore, it is natural to ask what happens when we combine both asymmetry and voltage control effects. This question is answered by the simulations presented in this study. The efficiency of high-order even harmonics is increased by the combined effects. Furthermore, the development of ‘petals’ in high-order emission is shown to be more easily achieved, opening the possibility to very interesting fundamental physics studies and more efficient devices for the GHz–THz range. Full article
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10 pages, 1301 KiB  
Article
Homodyne Solid-State Biased Coherent Detection of Ultra-Broadband Terahertz Pulses with Static Electric Fields
by Alessandro Tomasino, Riccardo Piccoli, Yoann Jestin, Boris Le Drogoff, Mohamed Chaker, Aycan Yurtsever, Alessandro Busacca, Luca Razzari and Roberto Morandotti
Nanomaterials 2021, 11(2), 283; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11020283 - 22 Jan 2021
Cited by 6 | Viewed by 1856
Abstract
We present an innovative implementation of the solid-state-biased coherent detection (SSBCD) technique, which we have recently introduced for the reconstruction of both amplitude and phase of ultra-broadband terahertz pulses. In our previous works, the SSBCD method has been operated via a heterodyne scheme, [...] Read more.
We present an innovative implementation of the solid-state-biased coherent detection (SSBCD) technique, which we have recently introduced for the reconstruction of both amplitude and phase of ultra-broadband terahertz pulses. In our previous works, the SSBCD method has been operated via a heterodyne scheme, which involves demanding square-wave voltage amplifiers, phase-locked to the THz pulse train, as well as an electronic circuit for the demodulation of the readout signal. Here, we demonstrate that the SSBCD technique can be operated via a very simple homodyne scheme, exploiting plain static bias voltages. We show that the homodyne SSBCD signal turns into a bipolar transient when the static field overcomes the THz field strength, without the requirement of an additional demodulating circuit. Moreover, we introduce a differential configuration, which extends the applicability of the homodyne scheme to higher THz field strengths, also leading a two-fold improvement of the dynamic range compared to the heterodyne counterpart. Finally, we demonstrate that, by reversing the sign of the static voltage, it is possible to directly retrieve the absolute THz pulse polarity. The homodyne configuration makes the SSBCD technique of much easier access, leading to a vast range of field-resolved applications. Full article
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