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Nanoscience and Nanotechnology for Electronics
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Nanoscience and Nanotechnology for Electronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (31 October 2022) | Viewed by 35434

Special Issue Editor

Dr. Christian Falconi

E-Mail Website
Guest Editor
Department of Electronic Engineering, University of Rome Tor Vergata, 00133 Roma, Italy
Interests: analog electronics; electronic interfaces; sensors; micro/nanosystems; electronic devices; biomedical engineering and nanogenerators
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Nanoscience and nanotechnology are already crucial for electronics. Downscaling is the key strategy for keeping the pace with Moore’s law and already allows integrating in a single chip billions of impressively compact, fast, reliable, and power-efficient transistors. However, in addition to the spectacular advantages of downscaling which can be predicted with classical physics, reducing dimensions may also dramatically change materials’ properties or enable working mechanisms which would otherwise be impossible. As a consequence, in addition to just increasing the number of transistors per chip (“more Moore”), nanoscience and nanotechnology have the potential to substantially extend the capabilities of today’s electronic systems with unprecedented functions (“more than Moore”) and devices (e.g., better transistors, transducers, energy harvesters, batteries, wearable devices, and more).  

However, taking full advantage of nanomaterials requires overcoming many challenges. Nanodevices are unavoidably more complex to fabricate, model, characterize, and assemble into functional systems.  

This Special Issue of Nanomaterials will cover challenges and opportunities of Nanoscience and Nanotechnology for Electronics. The format of articles includes full papers, communications, and reviews. Potential topics include but are not limited to: 

  • Nanomaterials for electronics;
  • Nanomaterials for bioelectronics;
  • Nanomaterials for sensors, actuators, and transducers;
  • Nanomaterials for flexible/wearable systems;
  • Quasi-1D nanostructures (nanowires, carbon nanotubes, etc.) for electronics;
  • 2D electronics (graphene, MoS2, 2D heterostructures, etc.);
  • Nanogenerators (piezoelectric, triboelectric, etc.);
  • Nanotransducers (piezoelectric, etc.);
  • Modeling of nanomaterials for electronics;
  • Synthesis of nanomaterials for electronics;
  • Characterization of nanomaterials for electronics.

Dr. Christian Falconi
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanomaterials for electronics
  • nanoscience and nanotechnology for electronics
  • nanotransducers
  • nanogenerators

Published Papers (12 papers)

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Research

17 pages, 2922 KiB  
Article
Self-Assembled Synthesis of Porous Iron-Doped Graphitic Carbon Nitride Nanostructures for Efficient Photocatalytic Hydrogen Evolution and Nitrogen Fixation
by Valmiki B. Koli, Gavaskar Murugan and Shyue-Chu Ke
Nanomaterials 2023, 13(2), 275; https://0-doi-org.brum.beds.ac.uk/10.3390/nano13020275 - 09 Jan 2023
Cited by 4 | Viewed by 3094
Abstract
In this study, Fe-doped graphitic carbon nitride (Fe-MCNC) with varying Fe contents was synthesized via a supramolecular approach, followed by thermal exfoliation, and was then used for accelerated photocatalytic hydrogen evolution and nitrogen fixation. Various techniques were used to study the physicochemical properties [...] Read more.
In this study, Fe-doped graphitic carbon nitride (Fe-MCNC) with varying Fe contents was synthesized via a supramolecular approach, followed by thermal exfoliation, and was then used for accelerated photocatalytic hydrogen evolution and nitrogen fixation. Various techniques were used to study the physicochemical properties of the MCN (g-C3N4 from melamine) and Fe-MCNC (MCN for g-C3N4 and C for cyanuric acid) catalysts. The field emission scanning electron microscopy (FE-SEM) images clearly demonstrate that the morphology of Fe-MCNC changes from planar sheets to porous, partially twisted (partially developed nanotube and nanorod) nanostructures. The elemental mapping study confirms the uniform distribution of Fe on the MCNC surface. The X-ray photoelectron spectroscopy (XPS) and UV-visible diffuse reflectance spectroscopy (UV-DRS) results suggest that the Fe species might exist in the Fe3+ state and form Fe-N bonds with N atoms, thereby extending the visible light absorption areas and decreasing the band gap of MCN. Furthermore, doping with precise amounts of Fe might induce exfoliation and increase the specific surface area, but excessive Fe could destroy the MCN structure. The optimized Fe-MCNC nanostructure had a specific surface area of 23.6 m2 g−1, which was 8.1 times greater than that of MCN (2.89 m2 g−1). To study its photocatalytic properties, the nanostructure was tested for photocatalytic hydrogen evolution and nitrogen fixation; 2Fe-MCNC shows the highest photocatalytic activity, which is approximately 13.3 times and 2.4 times better, respectively, than MCN-1H. Due to its high efficiency and stability, the Fe-MCNC nanostructure is a promising and ideal photocatalyst for a wide range of applications. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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17 pages, 4074 KiB  
Article
Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene
by Justinas Jorudas, Daniil Pashnev, Irmantas Kašalynas, Ilja Ignatjev, Gediminas Niaura, Algirdas Selskis, Vladimir Astachov and Natalia Alexeeva
Nanomaterials 2022, 12(22), 4017; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12224017 - 15 Nov 2022
Cited by 2 | Viewed by 2535
Abstract
To fabricate graphene-based high-frequency electronic and optoelectronic devices, there is a high demand for scalable low-contaminated graphene with high mobility. Graphene synthesized via chemical vapor deposition (CVD) on copper foil appears promising for this purpose, but residues from the polymethyl methacrylate (PMMA) layer, [...] Read more.
To fabricate graphene-based high-frequency electronic and optoelectronic devices, there is a high demand for scalable low-contaminated graphene with high mobility. Graphene synthesized via chemical vapor deposition (CVD) on copper foil appears promising for this purpose, but residues from the polymethyl methacrylate (PMMA) layer, used for the wet transfer of CVD graphene, drastically affect the electrical properties of graphene. Here, we demonstrate a scalable and green PMMA removal technique that yields high-mobility graphene on the most common technologically relevant silicon (Si) substrate. As the first step, the polarity of the PMMA was modified under deep-UV irradiation at λ = 254 nm, due to the formation of ketones and aldehydes of higher polarity, which simplifies hydrogen bonding in the step of its dissolution. Modification of PMMA polarity was confirmed by UV and FTIR spectrometry and contact angle measurements. Consecutive dissolution of DUV-exposed PMMA in an environmentally friendly, binary, high-polarity mixture of isopropyl alcohol/water (more commonly alcohol/water) resulted in the rapid and complete removal of DUV-exposed polymers without the degradation of graphene properties, as low-energy exposure does not form free radicals, and thus the released graphene remained intact. The high quality of graphene after PMMA removal was confirmed by SEM, AFM, Raman spectrometry, and by contact and non-contact electrical conductivity measurements. The removal of PMMA from graphene was also performed via other common methods for comparison. The charge carrier mobility in graphene films was found to be up to 6900 cm2/(V·s), demonstrating a high potential of the proposed PMMA removal method in the scalable fabrication of high-performance electronic devices based on CVD graphene. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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13 pages, 2488 KiB  
Article
Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate
by Jae-Young Bae, Man-Hyup Han, Seung-Jae Lee, Eun-Seong Kim, Kyungsik Lee, Gon-sub Lee, Jin-Hyung Park and Jea-Gun Park
Nanomaterials 2022, 12(21), 3893; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12213893 - 04 Nov 2022
Cited by 3 | Viewed by 3996
Abstract
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, essentially requiring Si wafer polishing at a very high [...] Read more.
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, essentially requiring Si wafer polishing at a very high Si polishing rate (500 nm/min) by accelerating the degree of the hydrolysis reaction (i.e., Si-O-H) on the polished Si wafer surface during CMP. Unlike conventional hydrolysis reaction accelerators (i.e., sodium hydroxide and potassium hydroxide), a novel hydrolysis reaction accelerator with amine functional groups (i.e., 552.8 nm/min for ethylenediamine) surprisingly presented an Si wafer polishing rate >3 times higher than that of conventional hydrolysis reaction accelerators (177.1 nm/min for sodium hydroxide). This remarkable enhancement of the Si wafer polishing rate for ethylenediamine was principally the result of (i) the increased hydrolysis reaction, (ii) the enhanced degree of adsorption of the CMP slurry on the polished Si wafer surface during CMP, and (iii) the decreased electrostatic repulsive force between colloidal silica abrasives and the Si wafer surface. A higher ethylenediamine concentration in the Si wafer CMP slurry led to a higher extent of hydrolysis reaction and degree of adsorption for the slurry and a lower electrostatic repulsive force; thus, a higher ethylenediamine concentration resulted in a higher Si wafer polishing rate. With the aim of achieving further improvements to the Si wafer polishing rates using Si wafer CMP slurry including ethylenediamine, the Si wafer polishing rate increased remarkably and root-squarely with the increasing ethylenediamine concentration. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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15 pages, 8502 KiB  
Article
Inkjet-Printed Silver Nanowire Ink for Flexible Transparent Conductive Film Applications
by Shuyue Wang, Xiaoli Wu, Jiaxin Lu, Zhengwu Luo, Hui Xie, Xiaobin Zhang, Kaiwen Lin and Yuehui Wang
Nanomaterials 2022, 12(5), 842; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12050842 - 02 Mar 2022
Cited by 9 | Viewed by 3366
Abstract
The development of flexible transparent conductive electrodes has been considered as a key issue in realizing flexible functional electronics. Inkjet printing provides a new opportunity for the manufacture of FFE due to simple process, cost-effective, environmental friendliness, and digital method to circuit pattern. [...] Read more.
The development of flexible transparent conductive electrodes has been considered as a key issue in realizing flexible functional electronics. Inkjet printing provides a new opportunity for the manufacture of FFE due to simple process, cost-effective, environmental friendliness, and digital method to circuit pattern. However, obtaining high concentration of inkjet- printed silver nanowires (AgNWs) conductive ink is a great challenge because the high aspect ratio of AgNWs makes it easy to block the jetting nozzle. This study provides an inkjet printing AgNWs conductive ink with low viscosity and high concentration of AgNWs and good printing applicability, especially without nozzle blockage after printing for more than 4 h. We discussed the effects of the components of the ink on surface tension, viscosity, contact angle as well as droplet spreading behavior. Under the optimized process and formulation of ink, flexible transparent conductive electrode with a sheet resistance of 32 Ω·sq−1–291 nm·sq−1 and a transmittancy at 550 nm of 72.5–86.3% is achieved. We investigated the relationship between the printing layer and the sheet resistance and the stability of the sheet resistance under a bending test as well as the infrared thermal response of the AgNWs–based flexible transparent conductive electrode. We successfully printed the coupling electrodes and demonstrated the excellent potential of inkjet-printed AgNWs—based flexible transparent conductive electrode for developing flexible functional electronics. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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14 pages, 5111 KiB  
Article
Application of ZnO Nanoparticles in Sn99Ag0.3Cu0.7-Based Composite Solder Alloys
by Agata Skwarek, Olivér Krammer, Tamás Hurtony, Przemysław Ptak, Krzysztof Górecki, Sebastian Wroński, Dániel Straubinger, Krzysztof Witek and Balázs Illés
Nanomaterials 2021, 11(6), 1545; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11061545 - 11 Jun 2021
Cited by 26 | Viewed by 2326
Abstract
The properties of Sn99Ag0.3Cu0.7 (SACX0307) solder alloy reinforced with ZnO nanoparticles were investigated. The primary ZnO particle sizes were 50, 100, and 200 nm. They were added to a solder paste at a ratio of 1.0 wt %. The wettability, the void formation, [...] Read more.
The properties of Sn99Ag0.3Cu0.7 (SACX0307) solder alloy reinforced with ZnO nanoparticles were investigated. The primary ZnO particle sizes were 50, 100, and 200 nm. They were added to a solder paste at a ratio of 1.0 wt %. The wettability, the void formation, the mechanical strength, and the thermoelectric parameters of the composite solder alloys/joints were investigated. Furthermore, microstructural evaluations were performed using scanning electron and ion microscopy. ZnO nanoparticles decreased the composite solder alloys’ wettability, which yielded increased void formation. Nonetheless, the shear strength and the thermoelectric parameters of the composite solder alloy were the same as those of the SACX0307 reference. This could be explained by the refinement effects of ZnO ceramics both on the Sn grains and on the Ag3Sn and Cu6Sn5 intermetallic grains. This could compensate for the adverse impact of lower wettability. After improving the wettability, using more active fluxes, ZnO composite solder alloys are promising for high-power applications. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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13 pages, 1666 KiB  
Article
Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio
by Jeong Hyuk Lee, Byeong Hyeon Lee, Jeonghun Kang, Mangesh Diware, Kiseok Jeon, Chaehwan Jeong, Sang Yeol Lee and Kee Hoon Kim
Nanomaterials 2021, 11(5), 1237; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11051237 - 07 May 2021
Cited by 9 | Viewed by 2537
Abstract
Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized [...] Read more.
Transparent p-CuI/n-SiZnSnO (SZTO) heterojunction diodes are successfully fabricated by thermal evaporation of a (111) oriented p-CuI polycrystalline film on top of an amorphous n-SZTO film grown by the RF magnetron sputtering method. A nitrogen annealing process reduces ionized impurity scattering dominantly incurred by Cu vacancy and structural defects at the grain boundaries in the CuI film to result in improved diode performance; the current rectification ratio estimated at ±2 V is enhanced from ≈106 to ≈107. Various diode parameters, including ideality factor, reverse saturation current, offset current, series resistance, and parallel resistance, are estimated based on the Shockley diode equation. An energy band diagram exhibiting the type-II band alignment is proposed to explain the diode characteristics. The present p-CuI/n-SZTO diode can be a promising building block for constructing useful optoelectronic components such as a light-emitting diode and a UV photodetector. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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11 pages, 1851 KiB  
Article
Label-Free Homogeneous microRNA Detection in Cell Culture Medium Based on Graphene Oxide and Specific Fluorescence Quenching
by Florentin R. Nitu, Lorand Savu, Sorin Muraru, Ioan Stoian and Mariana Ionită
Nanomaterials 2021, 11(2), 368; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11020368 - 02 Feb 2021
Cited by 6 | Viewed by 2148
Abstract
Label-free homogeneous optical detection of low concentration of oligonucleotides using graphene oxide in complex solutions containing proteins remains difficult. We used a colloidal graphene oxide (GO) as a fluorescent probe quencher to detect microRNA-21 spiked-in cell culture medium, overcoming previously reported problematic aspects [...] Read more.
Label-free homogeneous optical detection of low concentration of oligonucleotides using graphene oxide in complex solutions containing proteins remains difficult. We used a colloidal graphene oxide (GO) as a fluorescent probe quencher to detect microRNA-21 spiked-in cell culture medium, overcoming previously reported problematic aspects of protein interference with graphene oxide. We used a “turn off” assay for specific quenching-based detection of oligo DNA-microRNA hybridization in solution. A fluorescein conjugated 30-mer single-stranded DNA (ssDNA) probe was combined with a complementary synthetic microRNA (18 nucleotides) target. The probe-target hybridization was detected by specific quenching due to photoinduced electron transfer (PET). On the next step, GO captures and quenches the unhybridized probe by fluorescence resonance energy transfer (FRET) in the presence of cell culture medium supplemented with platelet lysate, 0.1% sodium dodecyl sulfate (SDS), 0.1% Triton X-100 and 50% formamide. This resulted in sensitive measurement of the specific probe-target complexes remaining in solution. The detection is linear in the range of 1 nM and 8 nM in a single 100 μL total volume assay sample containing 25% cell culture medium supplemented with platelet lysate. We highlight a general approach that may be adopted for microRNA target detection within complex physiological media. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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11 pages, 4020 KiB  
Article
Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer
by Te Jui Yen, Albert Chin and Vladimir Gritsenko
Nanomaterials 2021, 11(1), 92; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11010092 - 03 Jan 2021
Cited by 17 | Viewed by 4105
Abstract
Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect [...] Read more.
Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor’s turn-on subthreshold slopes (SS) of 526 mV/decade were achieved simultaneously. Secondary ion mass spectrometry analysis revealed that the excellent device integrity was strongly related to process temperature, because the HfO2/SnO interface and related μFE were degraded by Sn and Hf inter-diffusion at an elevated temperature due to weak Sn–O bond enthalpy. Oxygen content during process is also crucial because the hole-conductive p-type SnO channel is oxidized into oxygen-rich n-type SnO2 to demote the device performance. The hole μFE, ION/IOFF, and SS values obtained in this study are the best-reported data to date for top-gate p-TFT device, thus facilitating the development of monolithic 3D ICs on the backend dielectric of IC chips. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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11 pages, 12148 KiB  
Article
Effects of Curing Temperature on Bending Durability of Inkjet-Printed Flexible Silver Electrode
by Nam Woon Kim, Duck-Gyu Lee, Kyung-Shik Kim and Shin Hur
Nanomaterials 2020, 10(12), 2463; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10122463 - 09 Dec 2020
Cited by 5 | Viewed by 2045
Abstract
Flexible electrodes should have a good mechanical durability and electrical properties under even extreme bending and deformation conditions. We fabricated such an electrode using an inkjet printing system. In addition, annealing was performed under curing temperatures of 150, 170, and 190 °C to [...] Read more.
Flexible electrodes should have a good mechanical durability and electrical properties under even extreme bending and deformation conditions. We fabricated such an electrode using an inkjet printing system. In addition, annealing was performed under curing temperatures of 150, 170, and 190 °C to improve the electrical resistance performance of the electrode. Scanning electron microscopy, X-ray diffraction, nanoindentation, and surface profile measurements were performed to measure and analyze the electrode characteristics and the change in the shape of the coffee ring. The bending deformation behavior of the electrode was predicted by simulations. To confirm the bending durability of the flexible electrode according to different curing temperatures, the bending deformation and electrical resistance were simultaneously tested. It was found that the electrode cured at a temperature of 170 °C could endure 20,185 bending cycles and had the best durability, which was consistent with the predicted simulation results. Moreover, the average specific resistance before the electrode was disconnected was 13.45 μΩ cm, which is similar to the conventional electrode value. These results are expected to increase the durability and life of flexible electrodes, which can be used in flexible electronic devices, sensors, and wearable devices that are subjected to significant bending deformation. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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11 pages, 2298 KiB  
Article
A Flexible Carbon Nanotubes-Based Auxetic Sponge Electrode for Strain Sensors
by Francesco La Malfa, Salvatore Puce, Francesco Rizzi and Massimo De Vittorio
Nanomaterials 2020, 10(12), 2365; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10122365 - 27 Nov 2020
Cited by 14 | Viewed by 2392
Abstract
Soft compliant strain gauges are key devices for wearable applications such as body health sensor systems, exoskeletons, or robotics. Other than traditional piezoresistive materials, such as metals and doped semiconductors placed on strain-sensitive microsystems, a class of soft porous materials with exotic mechanical [...] Read more.
Soft compliant strain gauges are key devices for wearable applications such as body health sensor systems, exoskeletons, or robotics. Other than traditional piezoresistive materials, such as metals and doped semiconductors placed on strain-sensitive microsystems, a class of soft porous materials with exotic mechanical properties, called auxetics, can be employed in strain gauges in order to boost their performance and add functionalities. For strain electronic read-outs, their polymeric structure needs to be made conductive. Herein, we present the fabrication process of an auxetic electrode based on a polymeric nanocomposite. A multiwalled carbon nanotube/polydimethylsiloxane (MWCNT/PDMS) is fabricated on an open-cell polyurethane (PU) auxetic foam and its effective usability as an electrode for strain-gauge sensors is assessed. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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8 pages, 2685 KiB  
Article
High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer
by Te Jui Yen, Albert Chin and Vladimir Gritsenko
Nanomaterials 2020, 10(11), 2145; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10112145 - 28 Oct 2020
Cited by 12 | Viewed by 3767
Abstract
Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (μFE) [...] Read more.
Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (μFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, μFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400 °C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2. The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2/SnO2 interfaces to increase the mobility. Such high μFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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14 pages, 371 KiB  
Article
Effects of A Magnetic Field on the Transport and Noise Properties of a Graphene Ribbon with Antidots
by Paolo Marconcini and Massimo Macucci
Nanomaterials 2020, 10(11), 2098; https://0-doi-org.brum.beds.ac.uk/10.3390/nano10112098 - 23 Oct 2020
Cited by 5 | Viewed by 1588
Abstract
We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots [...] Read more.
We perform a numerical simulation of the effects of an orthogonal magnetic field on charge transport and shot noise in an armchair graphene ribbon with a lattice of antidots. This study relies on our envelope-function based code, in which the presence of antidots is simulated through a nonzero mass term and the magnetic field is introduced with a proper choice of gauge for the vector potential. We observe that by increasing the magnetic field, the energy gap present with no magnetic field progressively disappears, together with features related to commensurability and quantum effects. In particular, we focus on the behavior for high values of the magnetic field: we notice that when it is sufficiently large, the effect of the antidots vanishes and shot noise disappears, as a consequence of the formation of edge states crawling along the boundaries of the structure without experiencing any interaction with the antidots. Full article
(This article belongs to the Special Issue Nanoscience and Nanotechnology for Electronics)
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