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Nanomaterials
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Wide Band Gap Oxide Based Nanomaterials and Thin Films
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Wide Band Gap Oxide Based Nanomaterials and Thin Films

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (30 November 2022) | Viewed by 14452

Special Issue Editors

Prof. Farida Selim

E-Mail Website
Guest Editor
Department of Physics and Astronomy &Center for Photochemical Sciences, Bowling Green State University, Bowling Green, OH 43403, USA
Interests: Semiconductors; Photonic materials; Thin films; Complex oxides; Defect studies; Positron annihilation spectroscopy; electrical and optical characterization; radiation damage
Dr. Yongqiang Wang

E-Mail Website
Guest Editor
Materials Science & Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87544, USA
Interests: Ion enhanced synthesis; ion implantation; radiation damage; irradiated materials; thin films; surface characterization; complex oxides; nuclear materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The development of wide band gap oxide nanomaterials and thin films with excellent transport properties has become a major key for harnessing solar energy and advancing optoelectronic and high-power devices. Wide band gap oxides also play crucial roles as nanoparticles for drug delivery and diagnostic imaging agents in biomedical applications, as well in advanced radiation detection and nuclear energy research. The wide band gap provides a unique wide transparency for the electromagnetic spectrum and can sustain extremely high fields and radiation. Further, it often leads to novel fascinating physical and electronic phenomena.

This Special Issue of Nanomaterials, “Wide Band Gap Oxide Nanomaterials and Thin Films”, aims to cover the recent experimental and theoretical research advances in physics, chemistry, and material science, especially pertaining to synthesis and characterization of wide band gap oxide nanomaterials and thin films as well as their broad applications in energy, electronics, and radiation detection. Both fundamental and applied research related to nanomaterials and devices are emphasized in this Special Issue. We are pleased to invite you to submit full-length original research articles, short communications, or review articles on new experimental and theoretical research related to these areas. Research related but not limited to functional oxides such as Ga2O3, ZnO, SnO2, InO2, and TiO2, as well as oxides with relevant applications in medical research, nuclear energy, and radiation detection such as iron oxides, pyrochlores, and perovskites are highly encouraged.

We look forward to receiving your contributions.

Prof. Farida Selim
Dr. Yongqiang Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • oxide semiconductors
  • oxide quantum dots
  • interfaces and heterostructures
  • electronic,magnetic, and photonic properties
  • defects in thin films
  • doping and alloying
  • band gap tuning
  • transparent conductors
  • radiation effects
  • radiation detection
  • thin corroded films

Published Papers (6 papers)

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Research

14 pages, 3519 KiB  
Article
Enhancement of Perovskite Solar Cells by TiO2-Carbon Dot Electron Transport Film Layers
by Tamasgen Fikadu Yadeta, Kuo-Wei Huang, Toyoko Imae and Yung-Liang Tung
Nanomaterials 2023, 13(1), 186; https://0-doi-org.brum.beds.ac.uk/10.3390/nano13010186 - 31 Dec 2022
Cited by 5 | Viewed by 2395
Abstract
The high performance of perovskite solar cells was produced with the help of an electron transport layer (ETL) and hole transport layer. The film ETL (mesoporous (meso)-TiO2/carbon dot) boosted the efficiency of the perovskite solar cells. A perovskite cell was fabricated [...] Read more.
The high performance of perovskite solar cells was produced with the help of an electron transport layer (ETL) and hole transport layer. The film ETL (mesoporous (meso)-TiO2/carbon dot) boosted the efficiency of the perovskite solar cells. A perovskite cell was fabricated by a coating of carbon dot on a meso-TiO2 ETL. The fabricated meso-TiO2/carbon dot-based device has decreased the pin-holes of the perovskite film layer compared to the meso-TiO2-based device, which boosted 3% of the averaged PCE value of the devices. The UV–visible spectroscopy confirmed that the meso-TiO2/carbon dot ETL showed better absorbance, that is, absorbed more incident light than meso-TiO2 ETL to generate higher power conversion efficiency. Coating of carbon dot on meso-TiO2 reduced carrier recombination, and fadeaway of the perovskite film cracks. The X-ray diffraction spectra displayed the removal of the perovskite component after spin-coating of carbon dot to the meso-TiO2 ETL, indicating that the suppression of non-radiative recombination improves the device performance compared to meso-TiO2 ETL. The stability after four weeks on the performance of the device was improved to be 92% by depositing carbon dot on meso-TiO2 ETL compared to the meso-TiO2 ETL-based device (82%). Thus, the high-quality perovskite cell was fabricated by coating carbon dot on a meso-TiO2 ETL, because the electron transport between ETL and perovskite film layer was improved by the injection of electrons from carbon dot. Full article
(This article belongs to the Special Issue Wide Band Gap Oxide Based Nanomaterials and Thin Films)
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20 pages, 5036 KiB  
Article
Tailoring the Emission Behavior of WO3 Thin Films by Eu3+ Ions for Light-Emitting Applications
by V. S. Kavitha, V. Biju, K. G. Gopchandran, R. Praveena, C. K. Jayasankar, Wanichaya Mekprasart, Kanokthip Boonyarattanakalin, Wisanu Pecharapa and V. P. Mahadevan Pillai
Nanomaterials 2023, 13(1), 7; https://0-doi-org.brum.beds.ac.uk/10.3390/nano13010007 - 20 Dec 2022
Cited by 3 | Viewed by 1535
Abstract
The article reports the successful fabrication of Eu3+-doped WO3 thin films via the radio-frequency magnetron sputtering (RFMS) technique. To our knowledge, this is the first study showing the tunable visible emission (blue to bluish red) from a WO3:Eu [...] Read more.
The article reports the successful fabrication of Eu3+-doped WO3 thin films via the radio-frequency magnetron sputtering (RFMS) technique. To our knowledge, this is the first study showing the tunable visible emission (blue to bluish red) from a WO3:Eu3+ thin film system using RFMS. X-ray diffractograms revealed that the crystalline nature of these thin films increased upto 3 wt% of the Eu3+ concentration. The diffraction peaks in the crystalline films are matched well with the monoclinic crystalline phase of WO3, but for all the films’, micro-Raman spectra detected bands related to WO3 monoclinic phase. Vibrational and surface studies reveal the amorphous/semi-crystalline behavior of the 10 wt% Eu3+-doped sample. Valence state determination shows the trivalent state of Eu ions in doped films. In the 400–900 nm regions, the fabricated thin films show an average optical transparency of ~51–85%. Moreover, the band gap energy gradually reduces from 2.95 to 2.49 eV, with an enhancement of the Eu3+-doping content. The doped films, except the one at a higher doping concentration (10 wt%), show unique emissions of Eu3+ ions, besides the band edge emission of WO3. With an enhancement of the Eu3+ content, the concentration quenching process of the Eu3+ ions’ emission intensities is visible. The variation in CIE chromaticity coordinates suggest that the overall emission color can be altered from blue to bluish red by changing the Eu3+ ion concentration. Full article
(This article belongs to the Special Issue Wide Band Gap Oxide Based Nanomaterials and Thin Films)
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12 pages, 4418 KiB  
Article
Enhanced Solar Efficiency via Incorporation of Plasmonic Gold Nanostructures in a Titanium Oxide/Eosin Y Dye-Sensitized Solar Cell
by Sanele Nyembe, Francis Chindeka, Gebhu Ndlovu, Andile Mkhohlakali, Tebello Nyokong and Lucky Sikhwivhilu
Nanomaterials 2022, 12(10), 1715; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12101715 - 17 May 2022
Cited by 2 | Viewed by 1655
Abstract
Plasmonic gold nanoparticles significantly improved the efficiency of a TiO2 and Eosin Y based dye-sensitized solar cell from 2.4 to 6.43%. The gold nanoparticles’ sizes that were tested were 14 nm, 30 nm and 40 nm synthesized via the systematic reduction of [...] Read more.
Plasmonic gold nanoparticles significantly improved the efficiency of a TiO2 and Eosin Y based dye-sensitized solar cell from 2.4 to 6.43%. The gold nanoparticles’ sizes that were tested were 14 nm, 30 nm and 40 nm synthesized via the systematic reduction of citrate concentration using the Turkevich method. Prestine TiO2 without plasmonic gold nanoparticles yielded an efficiency of 2.4%. However, the loading of 40 nm gold nanoparticles into the TiO2 matrix yielded the highest DSSC efficiency of 6.43% compared to 30 nm (5.91%) and 14 nm (2.6%). The relatively high efficiency demonstrated by plasmonic gold nanoparticles is ascribed to light absorption/scattering, hot electron injection and plasmon-induced resonance energy transfer (PIRET), influenced by the size of the gold nanoparticles. Full article
(This article belongs to the Special Issue Wide Band Gap Oxide Based Nanomaterials and Thin Films)
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13 pages, 3793 KiB  
Article
Comparative Study of Aluminum-Doped Zinc Oxide, Gallium-Doped Zinc Oxide and Indium-Doped Tin Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering
by Shadab Khan and Eugen Stamate
Nanomaterials 2022, 12(9), 1539; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12091539 - 02 May 2022
Cited by 6 | Viewed by 2246
Abstract
A timely replacement of the rather expensive indium-doped tin oxide with aluminum-doped zinc oxide is hindered by the poor uniformity of electronic properties when deposited by magnetron sputtering. Recent results demonstrated the ability to improve the uniformity and to decrease the resistivity of [...] Read more.
A timely replacement of the rather expensive indium-doped tin oxide with aluminum-doped zinc oxide is hindered by the poor uniformity of electronic properties when deposited by magnetron sputtering. Recent results demonstrated the ability to improve the uniformity and to decrease the resistivity of aluminum-doped zinc oxide thin films by decreasing the energy of the oxygen-negative ions assisting in thin film growth by using a tuning electrode. In this context, a comparative study was designed to elucidate if the same phenomenology holds for gallium-doped zinc oxide and indium-doped tin oxide as well. The metal oxide thin films have been deposited in the same setup for similar discharge parameters, and their properties were measured with high spatial resolution and correlated with the erosion track on the target’s surface. Furthermore, the films were also subject to post annealing and degradation tests by wet etching. While the tuning electrode was able to reduce the self-bias for all three materials, only the doped zinc oxide films exhibited properties correlating with the erosion track. Full article
(This article belongs to the Special Issue Wide Band Gap Oxide Based Nanomaterials and Thin Films)
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13 pages, 6456 KiB  
Article
Effect of Substrate and Thickness on the Photoconductivity of Nanoparticle Titanium Dioxide Thin Film Vacuum Ultraviolet Photoconductive Detector
by Marilou Cadatal-Raduban, Tomoki Kato, Yusuke Horiuchi, Jiří Olejníček, Michal Kohout, Kohei Yamanoi and Shingo Ono
Nanomaterials 2022, 12(1), 10; https://0-doi-org.brum.beds.ac.uk/10.3390/nano12010010 - 21 Dec 2021
Cited by 10 | Viewed by 2782
Abstract
Vacuum ultraviolet radiation (VUV, from 100 nm to 200 nm wavelength) is indispensable in many applications, but its detection is still challenging. We report the development of a VUV photoconductive detector, based on titanium dioxide (TiO2) nanoparticle thin films. The effect [...] Read more.
Vacuum ultraviolet radiation (VUV, from 100 nm to 200 nm wavelength) is indispensable in many applications, but its detection is still challenging. We report the development of a VUV photoconductive detector, based on titanium dioxide (TiO2) nanoparticle thin films. The effect of crystallinity, optical quality, and crystallite size due to film thickness (80 nm, 500 nm, 1000 nm) and type of substrate (silicon Si, quartz SiO2, soda lime glass SLG) was investigated to explore ways of enhancing the photoconductivity of the detector. The TiO2 film deposited on SiO2 substrate with a film thickness of 80 nm exhibited the best photoconductivity, with a photocurrent of 5.35 milli-Amperes and a photosensitivity of 99.99% for a bias voltage of 70 V. The wavelength response of the detector can be adjusted by changing the thickness of the film as the cut-off shifts to a longer wavelength, as the film becomes thicker. The response time of the TiO2 detector is about 5.8 μs and is comparable to the 5.4 μs response time of a diamond UV sensor. The development of the TiO2 nanoparticle thin film detector is expected to contribute to the enhancement of the use of VUV radiation in an increasing number of important technological and scientific applications. Full article
(This article belongs to the Special Issue Wide Band Gap Oxide Based Nanomaterials and Thin Films)
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13 pages, 4888 KiB  
Article
The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films
by Anoop Kumar Singh, Shiau-Yuan Huang, Po-Wei Chen, Jung-Lung Chiang and Dong-Sing Wuu
Nanomaterials 2021, 11(9), 2316; https://0-doi-org.brum.beds.ac.uk/10.3390/nano11092316 - 06 Sep 2021
Cited by 15 | Viewed by 2508
Abstract
Spinel ZnGa2O4 films were grown on c-plane sapphire substrates at the substrate temperature of 400 °C by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700 °C in order to enhance their crystal quality. The [...] Read more.
Spinel ZnGa2O4 films were grown on c-plane sapphire substrates at the substrate temperature of 400 °C by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700 °C in order to enhance their crystal quality. The effect of thermal annealing on the microstructural and optoelectronic properties of ZnGa2O4 films was systematically investigated in various ambiences, such as air, nitrogen, and oxygen. The X-ray diffraction patterns of annealed ZnGa2O4 films showed the crystalline structure to have (111) crystallographic planes. Transmission electron micrographs verified that ZnGa2O4 film annealed under air ambience possesses a quasi-single-crystalline structure. This ZnGa2O4 film annealed under air ambience exhibited a smooth surface, an excellent average transmittance above 82% in the visible region, and a wide bandgap of 5.05 eV. The oxygen vacancies under different annealing ambiences were revealed a substantial impact on the material and photodetector characteristics by X-ray photoelectron spectrum investigations. ZnGa2O4 film exhibits optimal performance as a metal-semiconductor-metal photodetector when annealed under air ambience. Under these conditions, ZnGa2O4 film exhibits a higher photo/dark current ratio of ~104 order, as well as a high responsivity of 2.53 A/W at the bias of 5 V under an incident optical light of 240 nm. These results demonstrate that quasi-single-crystalline ZnGa2O4 films have significant potential in deep-ultraviolet applications. Full article
(This article belongs to the Special Issue Wide Band Gap Oxide Based Nanomaterials and Thin Films)
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