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Processes
Special Issues
Nano-Composite Thin Films: Synthesis, Properties, and Applications
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Nano-Composite Thin Films: Synthesis, Properties, and Applications

A special issue of Processes (ISSN 2227-9717). This special issue belongs to the section "Materials Processes".

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 4393

Special Issue Editors

Prof. Arash Afshar

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Guest Editor
Department of Mechanical Engineering, Mercer University, 1501 Mercer University Drive Macon, GA 31207, USA
Interests: composite materials; additive manufacturing; coating and thin film deposition; design and finite element analysis
Prof. Chad Korach

E-Mail Website
Guest Editor
School of Engineering, University of Mount Union, 1972 Clark Ave, Alliance, OH 44601, USA
Interests: mechanical systems; nanoscale systems; carbon nanotube-polymer composites; carbon-fiber-reinforced polymers

Special Issue Information

Dear Colleagues,

Nano-composite thin films are a new generation of coatings that produce desired surface properties and improved functional performance for materials. This Special Issue encompasses three main parts of the development of nano-composite thin films and coatings. The first part deals with the synthesis and fabrication, the second part focuses on the characterization of the properties and performances, and the third part concentrates on the application and importance of nano-composites thin films. The developed coatings can be used in a variety of applications, such as biomedical parts and implants, electronics and sensor technology, optoelectronics, tribology, environmental protection and shielding, energy conversion, medicine, and drug delivery systems. Studies focused on novel methods in the design, synthesis, and deposition of nano-composites thin films, and their advanced materials behavior and performance are highly recommended for publication in this Special Issue.

Prof. Arash Afshar
Prof. Chad Korach
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Processes is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nano-composites
  • thin films
  • coatings
  • synthesis
  • properties

Published Papers (1 paper)

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Research

10 pages, 3046 KiB  
Article
Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain
by Rauf Khan, Muhamad Affiq Bin Misran, Michitaka Ohtaki, Jun Tae Song, Tatsumi Ishihara and Reiji Hattori
Processes 2021, 9(12), 2193; https://0-doi-org.brum.beds.ac.uk/10.3390/pr9122193 - 06 Dec 2021
Cited by 2 | Viewed by 3271
Abstract
The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion [...] Read more.
The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs. Full article
(This article belongs to the Special Issue Nano-Composite Thin Films: Synthesis, Properties, and Applications)
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