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Advanced Optoelectronic Sensors and Sensing Technology Based on Low-Dimensional Materials
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Advanced Optoelectronic Sensors and Sensing Technology Based on Low-Dimensional Materials

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: closed (15 June 2023) | Viewed by 5290

Special Issue Editors

Dr. Peng Wang

E-Mail Website
Guest Editor
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Interests: infrared detector; photodetector; phototransistor; optoelectronic devices; device physics; thin films; low-dimensional materials; two-dimensional materials
Special Issues, Collections and Topics in MDPI journals
Dr. Qing Li

E-Mail Website
Guest Editor
Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences, Hangzhou 310024, China
Interests: infrared detector; extrinsic silicon detector; optoelectronic devices; APDs
Dr. Man Luo

E-Mail Website
Guest Editor
Jiangsu Key Laboratory of ASIC Design, School of Information Science and Technology, Nantong University, Nantong, Jiangsu 226019, China
Interests: infrared photodetectors; low-dimensional materials

Special Issue Information

Dear Colleagues,

In recent years, a number of low-dimensional materials, represented by two-dimensional (2D) material, have been discovered that exhibit many characteristics that are absent in conventional bulk or thin-film materials. Extremely thin thickness enables the background carriers to be easily suppressed by a local electric field and enables performance enhancement by introducing a local light field with artificial micro–nano structures. Furthermore, novel physical and optoelectronic properties enable some new kinds of functional devices that dramatically reduce the dark current and associated noise and provide new ideas for advanced optoelectronic sensors and sensing technology.

This Special Issue will be an overview of the research progress in low-dimensional material optoelectronic sensors and sensing technology. Potential topics include, but are not limited to:

Growth, and characterization of low-dimensional materials;

Optoelectronic sensor materials, processing and fabrication;

Photonic-crystal-enhanced optoelectronic sensors;

Simulations of low-dimensional material sensors;

Theory, principles, modeling and evaluation of optoelectronic sensors;

Machine/deep learning and artificial intelligence in sensing and imaging;

Applications of optoelectronic sensors in wearable sensors, devices and electronics.

We anticipate that this Special Issue will be of interest to our peers and newcomers in the field of low-dimensional material sensors.

Prof. Dr. Peng Wang
Dr. Qing Li
Dr. Man Luo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Optoelectronic and photonic sensors
  • Advanced materials for sensing
  • Photonic crystal
  • Quantum sensors
  • Smart and intelligent sensors and systems
  • Uncooled infrared photodetectors
  • Applications

Published Papers (2 papers)

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Research

19 pages, 5570 KiB  
Article
Solution-Processed Functionalized Graphene Film Prepared by Vacuum Filtration for Flexible NO2 Sensors
by Mbaye Dieng, Siva Sankar, Pingping Ni, Ileana Florea, Pedro Alpuim, Andrea Capasso, Abderrahim Yassar and Fatima Zahra Bouanis
Sensors 2023, 23(4), 1831; https://0-doi-org.brum.beds.ac.uk/10.3390/s23041831 - 07 Feb 2023
Cited by 3 | Viewed by 1976
Abstract
Large-scale production of graphene nanosheets (GNSs) has led to the availability of solution-processable GNSs on the commercial scale. The controlled vacuum filtration method is a scalable process for the preparation of wafer-scale films of GNSs, which can be used for gas sensing applications. [...] Read more.
Large-scale production of graphene nanosheets (GNSs) has led to the availability of solution-processable GNSs on the commercial scale. The controlled vacuum filtration method is a scalable process for the preparation of wafer-scale films of GNSs, which can be used for gas sensing applications. Here, we demonstrate the use of this deposition method to produce functional gas sensors, using a chemiresistor structure from GNS solution-based techniques. The GNS suspension was prepared by liquid-phase exfoliation (LPE) and transferred to a polyvinylidene fluoride (PVDF) membrane. The effect of non-covalent functionalization with Co-porphyrin and Fe-phthalocyanines on the sensor properties was studied. The pristine and functionalized GNS films were characterized using different techniques such as Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and electrical characterizations. The morphological and spectroscopic analyses both confirm that the molecules (Co-porphyrin and Fe-phthalocyanine) were successfully adsorbed onto the GNSs surface through π-π interactions. The chemiresistive sensor response of functionalized GNSs toward the low concentrations of nitrogen dioxide (NO2) (0.5–2 ppm) was studied and compared with those of the film of pristine GNSs. The tests on the sensing performance clearly showed sensitivity to a low concentration of NO2 (5 ppm). Furthermore, the chemical modification of GNSs significantly improves NO2 sensing performance compared to the pristine GNSs. The sensor response can be modulated by the type of adsorbed molecules. Indeed, Co-Por exhibited negative responsiveness (the response of Co-Por-GNS sensors and pristine GNS devices was 13.1% and 15.6%, respectively, after exposure to 0.5 ppm of NO2). Meanwhile, Fe-Phc-GNSs induced the opposite behavior resulting in an increase in the sensor response (the sensitivity was 8.3% and 7.8% of Fe-Phc-GNSs and pristine GNSs, respectively, at 0.5 ppm NO2 gas). Full article
(This article belongs to the Special Issue Advanced Optoelectronic Sensors and Sensing Technology Based on Low-Dimensional Materials)
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10 pages, 2160 KiB  
Article
High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel
by Jiawei Yang, Yudong Liu, Haina Ci, Feng Zhang, Jianbo Yin, Baolu Guan, Hailin Peng and Zhongfan Liu
Sensors 2022, 22(3), 959; https://0-doi-org.brum.beds.ac.uk/10.3390/s22030959 - 26 Jan 2022
Cited by 3 | Viewed by 2434
Abstract
Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor [...] Read more.
Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology. Full article
(This article belongs to the Special Issue Advanced Optoelectronic Sensors and Sensing Technology Based on Low-Dimensional Materials)
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