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Journal: Nanomaterials, 2019
Volume: 9
Number: 784

Article: The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
Authors: by Joong-Hyun Park, Myung-Hun Shin and Jun-Sin Yi
Link: https://0-www-mdpi-com.brum.beds.ac.uk/2079-4991/9/5/784

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