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Journal: Materials, 2021
Volume: 14
Number: 3330

Article: Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM
Authors: by Zhenzhong Zhang, Fang Wang, Kai Hu, Yu She, Sannian Song, Zhitang Song and Kailiang Zhang
Link: https://0-www-mdpi-com.brum.beds.ac.uk/1996-1944/14/12/3330

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