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Electronics
Volume 10
Issue 4
10.3390/electronics10040408
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Retraction of Electronics 2020, 9(8), 1268.
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Retraction

RETRACTED: Kang et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268

by
Shinyoung Kang
1,
Juyoung Lee
2,
Myounggon Kang
3,* and
Yunheub Song
1,*
1
Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea
2
Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Korea
3
Department of Electronics Engineering, Korea National University of Transportation, 50 Daehak-ro, Chungju-si, Chungbuk 380-702, Korea
*
Authors to whom correspondence should be addressed.
Electronics 2021, 10(4), 408; https://0-doi-org.brum.beds.ac.uk/10.3390/electronics10040408
Submission received: 4 February 2021 / Accepted: 4 February 2021 / Published: 8 February 2021
(This article belongs to the Special Issue New CMOS Devices and Their Applications)
Browse Figure
Versions Notes
The authors and journal retract the article, “Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications” [1], cited above.
Following its publication, the authors contacted the editorial office about incorrect use of materials and data used without authorization (as shown in Figure 1, the TEM images, and XRD data used).
The article [1] describes the use of a superlattice device based on the GeTe/Sb2Te3 material (Figure 1b). The device actually measured Ti-doped material, not GeTe/Sb2Te3 material. Further details were provided by the university that confirmed the extent of the issues described.
This retraction was approved by the Editor-in-Chief of the journal Electronics. The authors would like to apologize for any inconvenience caused to the readers by these changes.

Reference

  1. Kang, S.; Lee, J.; Kang, M.; Song, Y. RETRACTED: Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268. [Google Scholar] [CrossRef]
Electronics 10 00408 g001
Figure 1. (a) Schematic of the fabricated GeTe/Sb2Te3 (GT/ST) interfacial phase-change memory (iPCM) structure, (b) XRD diffraction pattern of a GT/ST SL (SL) structure and cross-sectional TEM image of the GT/ST superlattice on an Si (111) substrate.
Figure 1. (a) Schematic of the fabricated GeTe/Sb2Te3 (GT/ST) interfacial phase-change memory (iPCM) structure, (b) XRD diffraction pattern of a GT/ST SL (SL) structure and cross-sectional TEM image of the GT/ST superlattice on an Si (111) substrate.
Electronics 10 00408 g001
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MDPI and ACS Style

Kang, S.; Lee, J.; Kang, M.; Song, Y. RETRACTED: Kang et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268. Electronics 2021, 10, 408. https://0-doi-org.brum.beds.ac.uk/10.3390/electronics10040408

AMA Style

Kang S, Lee J, Kang M, Song Y. RETRACTED: Kang et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268. Electronics. 2021; 10(4):408. https://0-doi-org.brum.beds.ac.uk/10.3390/electronics10040408

Chicago/Turabian Style

Kang, Shinyoung, Juyoung Lee, Myounggon Kang, and Yunheub Song. 2021. "RETRACTED: Kang et al. Achievement of Gradual Conductance Characteristics Based on Interfacial Phase-Change Memory for Artificial Synapse Applications. Electronics 2020, 9, 1268" Electronics 10, no. 4: 408. https://0-doi-org.brum.beds.ac.uk/10.3390/electronics10040408

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