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Journal: Electronics, 2024
Volume: 13
Number: 962

Article: Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics
Authors: by Hyowon Yoon and Ogyun Seok
Link: https://0-www-mdpi-com.brum.beds.ac.uk/2079-9292/13/5/962

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