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Journal: Electronics, 2020
Volume: 9
Number: 1016

Article: Analytical Drain Current Model for a-SiGe:H Thin Film Transistors Considering Density of States
Authors: by Silvestre Salas-Rodríguez, Francisco López-Huerta, Agustín L. Herrera-May, Joel Molina-Reyes and Jaime Martínez-Castillo
Link: https://0-www-mdpi-com.brum.beds.ac.uk/2079-9292/9/6/1016

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